| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ... physica status solidi (b) 229 (3), r1-r3, 2002 | 1397 | 2002 |
| Phonon dispersion and Raman scattering in hexagonal GaN and AlN VY Davydov, YE Kitaev, IN Goncharuk, AN Smirnov, J Graul, ... Physical Review B 58 (19), 12899, 1998 | 907 | 1998 |
| Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC VY Davydov, NS Averkiev, IN Goncharuk, DK Nelson, IP Nikitina, ... Journal of applied physics 82 (10), 5097-5102, 1997 | 461 | 1997 |
| Band gap of hexagonal InN and InGaN alloys VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ... physica status solidi (b) 234 (3), 787-795, 2002 | 438 | 2002 |
| Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1) VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ... physica status solidi (b) 230 (2), R4-R6, 2002 | 432 | 2002 |
| Experimental and theoretical studies of phonons in hexagonal InN VY Davydov, VV Emtsev, IN Goncharuk, AN Smirnov, VD Petrikov, ... Applied physics letters 75 (21), 3297-3299, 1999 | 329 | 1999 |
| Acceptor states in the photoluminescence spectra of AA Klochikhin, VY Davydov, VV Emtsev, AV Sakharov, VA Kapitonov, ... Physical Review B 71 (19), 195207, 2005 | 180 | 2005 |
| Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1− x N alloys VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ... Physical Review B 65 (12), 125203, 2002 | 174 | 2002 |
| Phonon structure of InN grown by atomic layer epitaxy T Inushima, T Shiraishi, VY Davydov Solid state communications 110 (9), 491-495, 1999 | 157 | 1999 |
| Diamond-graphite phase transition in ultradisperse-diamond clusters AE Aleksenskii, MV Baidakova, AY Vul’, VY Davydov, YA Pevtsova Physics of the Solid State 39, 1007-1015, 1997 | 144 | 1997 |
| InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates J Aderhold, VY Davydov, F Fedler, H Klausing, D Mistele, T Rotter, ... Journal of crystal growth 222 (4), 701-705, 2001 | 141 | 2001 |
| Energy gap and optical properties of InxGa1–xN F Bechstedt, J Furthmüller, M Ferhat, LK Teles, LMR Scolfaro, JR Leite, ... physica status solidi (a) 195 (3), 628-633, 2003 | 136 | 2003 |
| Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ... Applied physics letters 83 (23), 4788-4790, 2003 | 126 | 2003 |
| Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229 VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ... R1, 2002 | 119 | 2002 |
| Phase transition-governed opal–VO2 photonic crystal VG Golubev, VY Davydov, NF Kartenko, DA Kurdyukov, AV Medvedev, ... Applied Physics Letters 79 (14), 2127-2129, 2001 | 117 | 2001 |
| Graphene based sensor for environmental monitoring of NO2 S Novikov, N Lebedeva, A Satrapinski, J Walden, V Davydov, A Lebedev Sensors and Actuators B: Chemical 236, 1054-1060, 2016 | 102 | 2016 |
| Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer CH Shen, HY Chen, HW Lin, S Gwo, AA Klochikhin, VY Davydov Applied physics letters 88 (25), 2006 | 102 | 2006 |
| Electronic and vibrational states in InN and InxGa1−x N solid solutions VY Davydov, AA Klochikhin Semiconductors 38, 861-898, 2004 | 100* | 2004 |
| Rehybridization of carbon on facets of detonation diamond nanocrystals and forming hydrosols of individual particles AT Dideikin, AE Aleksenskii, MV Baidakova, PN Brunkov, ... Carbon 122, 737-745, 2017 | 95 | 2017 |
| Physical properties of bulk GaN crystals grown by HVPE YV Melnik, KV Vassilevski, IP Nikitina, AI Babanin, VY Davydov, ... MRS Internet Journal of Nitride Semiconductor Research 2, 1-9, 1997 | 82 | 1997 |
Alexander N. SmirnovIoffe Physical-Technical Institute, Department of Optic of Solid StateVerified email at mail.ioffe.ru
