|Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si|
VK Dixit, T Ganguli, TK Sharma, SD Singh, R Kumar, S Porwal, P Tiwari, ...
Journal of Crystal Growth 310 (15), 3428-3435, 2008
|A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk …|
VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak
Journal of Physics D: Applied Physics 47 (6), 065103, 2014
|Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy|
S Ghosh, M Baral, R Kamparath, SD Singh, T Ganguli
Applied Physics Letters 115 (25), 2019
|Determination of the optical gap bowing parameter for ternary Ni 1− x Zn x O cubic rocksalt solid solutions|
SD Singh, V Nandanwar, H Srivastava, AK Yadav, A Bhakar, PR Sagdeo, ...
Dalton Transactions 44 (33), 14793-14798, 2015
|Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques|
SD Singh, M Nand, A Das, RS Ajimsha, A Upadhyay, R Kamparath, ...
Journal of Applied Physics 119 (16), 2016
|Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications|
K Baraik, SD Singh, Y Kumar, RS Ajimsha, P Misra, SN Jha, T Ganguli
Applied Physics Letters 110 (19), 2017
|Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells|
SD Singh, VK Dixit, S Porwal, R Kumar, AK Srivastava, T Ganguli, ...
Applied Physics Letters 97 (11), 111912-111912-3, 2010
|Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy|
SD Singh, RS Ajimsha, V Sahu, R Kumar, P Misra, DM Phase, SM Oak, ...
Applied Physics Letters 101 (21), 2012
|Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode|
SK Khamari, VK Dixit, T Ganguli, S Porwal, SD Singh, S Kher, RK Sharma, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011
|Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 pn heterojunction|
S Ghosh, M Baral, R Kamparath, RJ Choudhary, DM Phase, SD Singh, ...
Applied Physics Letters 115 (6), 2019
|Studies on structural and optical properties of pulsed laser deposited NiO thin films under varying deposition parameters|
SD Singh, A Das, RS Ajimsha, MN Singh, A Upadhyay, R Kamparath, ...
Materials Science in Semiconductor Processing 66, 186-190, 2017
|Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well|
SD Singh, S Porwal, TK Sharma, KC Rustagi
Journal of applied physics 99 (6), 063517-063517-6, 2006
|Investigation of crystalline and electronic band alignment properties of GaP/Ge (111) heterostructure|
VK Dixit, S Kumar, SD Singh, SK Khamari, R Kumar, P Tiwari, DM Phase, ...
Applied Physics Letters 104 (9), 2014
|Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates|
S Ghosh, H Srivastava, PN Rao, M Nand, P Tiwari, AK Srivastava, SN Jha, ...
Semiconductor Science and Technology 35 (8), 085024, 2020
|Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain|
TK Sharma, SD Singh, S Porwal, AK Nath
Journal of crystal growth 298, 527-530, 2007
|Data-reduction procedure for correction of geometric factors in the analysis of specular X-ray reflectivity of small samples|
A Das, SD Singh, RJ Choudhari, SK Rai, T Ganguli
Journal of Applied Crystallography 51 (5), 1295-1303, 2018
|Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction|
SD Singh, T Ganguli, RS Ajimsha, P Misra, DM Phase, LM Kukreja, ...
Applied Physics Letters 104 (1), 2014
|Determination of band offsets in strained InAsxP1− x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy|
VK Dixit, SD Singh, S Porwal, R Kumar, T Ganguli, AK Srivastava, SM Oak
Journal of Applied Physics 109 (8), 2011
|Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1− x) 2O3 alloys for x≤ 0.35 determined from low temperature optical reflectivity|
J Bhattacharjee, S Ghosh, P Pokhriyal, R Gangwar, R Dutt, A Sagdeo, ...
AIP Advances 11 (7), 2021
|Bond length variation in Zn substituted NiO studied from extended X-ray absorption fine structure|
SD Singh, AK Poswal, C Kamal, P Rajput, A Chakrabarti, SN Jha, ...
Solid State Communications 259, 40-44, 2017