Ruge Quhe
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Rise of silicene: A competitive 2D material
J Zhao, H Liu, Z Yu, R Quhe, S Zhou, Y Wang, CC Liu, H Zhong, N Han, ...
Progress in Materials Science 83, 24-151, 2016
Tunable and sizable band gap in silicene by surface adsorption
R Quhe, R Fei, Q Liu, J Zheng, H Li, C Xu, Z Ni, Y Wang, D Yu, Z Gao, ...
Scientific reports 2 (1), 853, 2012
Interfacial properties of monolayer and bilayer MoS2 contacts with metals: beyond the energy band calculations
H Zhong, R Quhe, Y Wang, Z Ni, M Ye, Z Song, Y Pan, J Yang, L Yang, ...
Scientific reports 6 (1), 1-16, 2016
Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene
Y Wang, P Huang, M Ye, R Quhe, Y Pan, H Zhang, H Zhong, J Shi, J Lu
Chemistry of Materials 29 (5), 2191-2201, 2017
Tunable and sizable band gap of single-layer graphene sandwiched between hexagonal boron nitride
R Quhe, J Zheng, G Luo, Q Liu, R Qin, J Zhou, D Yu, S Nagase, WN Mei, ...
NPG Asia Materials 4 (2), e6-e6, 2012
Monolayer phosphorene–metal contacts
Y Pan, Y Wang, M Ye, R Quhe, H Zhong, Z Song, X Peng, D Yu, J Yang, ...
Chemistry of Materials 28 (7), 2100-2109, 2016
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors
Z Ni, H Zhong, X Jiang, R Quhe, G Luo, Y Wang, M Ye, J Yang, J Shi, J Lu
Nanoscale 6 (13), 7609-7618, 2014
Does p-type ohmic contact exist in WSe 2–metal interfaces?
Y Wang, RX Yang, R Quhe, H Zhong, L Cong, M Ye, Z Ni, Z Song, J Yang, ...
Nanoscale 8 (2), 1179-1191, 2016
High-performance sub-10 nm monolayer Bi 2 O 2 Se transistors
R Quhe, J Liu, J Wu, J Yang, Y Wang, Q Li, T Li, Y Guo, J Yang, H Peng, ...
Nanoscale 11 (2), 532-540, 2019
Structural and electronic properties of bilayer and trilayer graphdiyne
Q Zheng, G Luo, Q Liu, R Quhe, J Zheng, K Tang, Z Gao, S Nagase, J Lu
Nanoscale 4 (13), 3990-3996, 2012
Sub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation
J Zheng, L Wang, R Quhe, Q Liu, H Li, D Yu, WN Mei, J Shi, Z Gao, J Lu
Scientific reports 3 (1), 1-9, 2013
Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors
R Quhe, Q Li, Q Zhang, Y Wang, H Zhang, J Li, X Zhang, D Chen, K Liu, ...
Physical Review Applied 10 (2), 024022, 2018
Half-metallic silicene and germanene nanoribbons: towards high-performance spintronics device
Y Wang, J Zheng, Z Ni, R Fei, Q Liu, R Quhe, C Xu, J Zhou, Z Gao, J Lu
Nano 7 (05), 1250037, 2012
Does the Dirac cone exist in silicene on metal substrates?
R Quhe, Y Yuan, J Zheng, Y Wang, Z Ni, J Shi, D Yu, J Yang, J Lu
Scientific Reports 4 (1), 1-8, 2014
Nonlinear optical properties of MoS2-WS2 heterostructure in fiber lasers
WJ Liu, ML Liu, B Liu, RG Quhe, M Lei, SB Fang, H Teng, ZY Wei
Optics Express 27 (5), 6689-6699, 2019
Graphdiyne–metal contacts and graphdiyne transistors
Y Pan, Y Wang, L Wang, H Zhong, R Quhe, Z Ni, M Ye, WN Mei, J Shi, ...
Nanoscale 7 (5), 2116-2127, 2015
Interfacial properties of bilayer and trilayer graphene on metal substrates
J Zheng, Y Wang, L Wang, R Quhe, Z Ni, WN Mei, Z Gao, D Yu, J Shi, J Lu
Scientific reports 3 (1), 2081, 2013
Performance Upper Limit of sub‐10 nm Monolayer MoS2 Transistors
Z Ni, M Ye, J Ma, Y Wang, R Quhe, J Zheng, L Dai, D Yu, J Shi, J Yang, ...
Advanced Electronic Materials 2 (9), 1600191, 2016
Schottky barriers in bilayer phosphorene transistors
Y Pan, Y Dan, Y Wang, M Ye, H Zhang, R Quhe, X Zhang, J Li, W Guo, ...
ACS applied materials & interfaces 9 (14), 12694-12705, 2017
Tunable band gap in germanene by surface adsorption
M Ye, R Quhe, J Zheng, Z Ni, Y Wang, Y Yuan, G Tse, J Shi, Z Gao, J Lu
Physica E: Low-dimensional Systems and Nanostructures 59, 60-65, 2014
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