| Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B 84 (3), 035313, 2011 | 222 | 2011 |
| Optical spectra of ZnO in the far ultraviolet: First-principles calculations and ellipsometric measurements P Gori, M Rakel, C Cobet, W Richter, N Esser, A Hoffmann, R Del Sole, ... Physical Review B 81 (12), 125207, 2010 | 66 | 2010 |
| valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies MR Wagner, JH Schulze, R Kirste, M Cobet, A Hoffmann, C Rauch, ... Physical Review B 80 (20), 205203, 2009 | 59 | 2009 |
| Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response I Iorsh, M Glauser, G Rossbach, J Levrat, M Cobet, R Butté, N Grandjean, ... Physical Review B 86 (12), 125308, 2012 | 39 | 2012 |
| Polariton effects in the dielectric function of ZnO excitons obtained by ellipsometry M Cobet, C Cobet, MR Wagner, N Esser, C Thomsen, A Hoffmann Applied Physics Letters 96 (3), 2010 | 39 | 2010 |
| GaN and InN conduction-band states studied by ellipsometry M Rakel, C Cobet, N Esser, F Fuchs, F Bechstedt, R Goldhahn, ... Physical Review B 77 (11), 115120, 2008 | 34 | 2008 |
| A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser F Hjort, J Enslin, M Cobet, MA Bergmann, J Gustavsson, T Kolbe, ... ACS photonics 8 (1), 135-141, 2020 | 24 | 2020 |
| Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained -plane GaN/AlGaN quantum wells G Rossbach, J Levrat, A Dussaigne, G Cosendey, M Glauser, M Cobet, ... Physical Review B 84 (11), 115315, 2011 | 17 | 2011 |
| Investigation of InGaN/GaN quantum wells for polariton laser diodes M Glauser, G Rossbach, G Cosendey, J Levrat, M Cobet, JF Carlin, ... physica status solidi c 9 (5), 1325-1329, 2012 | 9 | 2012 |
| Nonlinear emission properties of an optically anisotropic GaN-based microcavity J Levrat, G Rossbach, A Dussaigne, G Cosendey, M Glauser, M Cobet, ... Physical Review B 86 (16), 165321, 2012 | 8 | 2012 |
| Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning G Cardinali, F Hjort, N Prokop, J Enslin, M Cobet, MA Bergmann, ... Applied Physics Letters 121 (10), 2022 | 7 | 2022 |
| Ellipsometric study of ZnO from multimode formation of exciton-polaritons to the core-level regime M Cobet | 7 | 2010 |
| Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN R Goldhahn, C Buchheim, V Lebedev, V Cimalla, O Ambacher, C Cobet, ... Univ.-Bibliothek, 2005 | 6 | 2005 |
| Advances in ultraviolet-emitting vertical-cavity surface-emitting lasers F Hjort, J Enslin, M Cobet, MA Bergmann, J Ciers, G Cardinali, N Prokop, ... Gallium Nitride Materials and Devices XVI 11686, 116860F, 2021 | 1 | 2021 |
| Bosonic lasing and trapping of a dressed photon fluid in InGaN at room temperature M Cobet Physical Review B 94 (7), 075302, 2016 | 1 | 2016 |
| Erratum: Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response [Phys. Rev. B 86, 125308 … I Iorsh, M Glauser, G Rossbach, J Levrat, M Cobet, R Butté, N Grandjean, ... Physical Review B 90 (11), 119903, 2014 | 1 | 2014 |
| The quest for ultraviolet vertical-cavity surface-emitting lasers Å Haglund, F Hjort, J Enslin, MA Bergmann, M Cobet, G Cardinali, ... The European Conference on Lasers and Electro-Optics, cb_2_3, 2023 | | 2023 |
| Electrochemical etching for thin-film light-emitters Å Haglund, F Hjort, J Enslin, MA Bergmann, M Cobet, G Cardinali, ... Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| Thin-film UV VCSELs and LEDs by electrochemical etching Å Haglund, F Hjort, J Enslin, M Bergmann, M Cobet, G Cardinali, ... Light-Emitting Devices, Materials, and Applications XXVI, PC120220B, 2022 | | 2022 |
| Out of the blue: UV VCSELs Å Haglund, F Hjort, J Enslin, MA Bergmann, M Cobet, G Cardinali, ... Gallium Nitride Materials and Devices XVII, PC120010F, 2022 | | 2022 |
