Bernd Jenichen
Bernd Jenichen
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X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures
VM Kaganer, R Köhler, M Schmidbauer, R Opitz, B Jenichen
Physical Review B 55 (3), 1793, 1997
Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy
O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog
Physical Review B 52 (4), R2253, 1995
Correlation of structure and magnetism in GaAs with embedded Mn (Ga) As magnetic nanoclusters
M Moreno, A Trampert, B Jenichen, L Däweritz, KH Ploog
Journal of Applied Physics 92 (8), 4672-4677, 2002
Strain-mediated phase coexistence in heteroepitaxial films
VM Kaganer, B Jenichen, F Schippan, W Braun, L Däweritz, KH Ploog
Physical review letters 85 (2), 341, 2000
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ...
Physical Review B 85 (4), 045323, 2012
Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study
VM Kaganer, B Jenichen, F Schippan, W Braun, L Däweritz, KH Ploog
Physical Review B 66 (4), 045305, 2002
Properties of GaN nanowires grown by molecular beam epitaxy
L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfüller, S Münch, ...
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011
Periodic elastic domains of coexisting phases in epitaxial MnAs films on GaAs
T Plake, M Ramsteiner, VM Kaganer, B Jenichen, M Kästner, L Däweritz, ...
Applied physics letters 80 (14), 2523-2525, 2002
Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film
KM Dantscher, DA Kozlov, P Olbrich, C Zoth, P Faltermeier, M Lindner, ...
Physical Review B 92 (16), 165314, 2015
Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
FB Naranjo, MA Sánchez-Garcıa, F Calle, E Calleja, B Jenichen, ...
Applied physics letters 80 (2), 231-233, 2002
Weak antilocalization and electron-electron interaction effects in Cu-doped BiSe films
Y Takagaki, B Jenichen, U Jahn, M Ramsteiner, KJ Friedland
Physical Review B 85 (11), 115314, 2012
Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth
B Jenichen, W Braun, VM Kaganer, AG Shtukenberg, L Däweritz, ...
Review of scientific instruments 74 (3), 1267-1273, 2003
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
J Spitzer, A Höpner, M Kuball, M Cardona, B Jenichen, H Neuroth, B Brar, ...
Journal of applied physics 77 (2), 811-820, 1995
Macro-and micro-strain in GaN nanowires on Si (111)
B Jenichen, O Brandt, C Pfueller, P Dogan, M Knelangen, A Trampert
Nanotechnology 22 (29), 295714, 2011
Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction
U Pietsch, H Metzger, S Rugel, B Jenichen, IK Robinson
Journal of applied physics 74 (4), 2381-2387, 1993
MnAs nanoclusters embedded in GaAs studied by x-ray diffuse and coherent scattering
M Moreno, B Jenichen, V Kaganer, W Braun, A Trampert, L Däweritz, ...
Physical Review B 67 (23), 235206, 2003
Different growth rates for catalyst-induced and self-induced GaN nanowires
C Chèze, L Geelhaar, B Jenichen, H Riechert
Applied Physics Letters 97 (15), 2010
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S Fernández-Garrido, VM Kaganer, C Hauswald, B Jenichen, ...
Nanotechnology 25 (45), 455702, 2014
Structural properties of GaN layers on Si (001) grown by plasma-assisted molecular beam epitaxy
B Yang, A Trampert, O Brandt, B Jenichen, KH Ploog
Journal of applied physics 83 (7), 3800-3806, 1998
Long-range order in thin epitaxial films grown on GaAs(001)
B Jenichen, VM Kaganer, J Herfort, DK Satapathy, HP Schönherr, ...
Physical Review B 72 (7), 075329, 2005
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