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Hassan Ghadiri
Hassan Ghadiri
Department of Physics, North Tehran Branch, Islamic Azad University, 16511-53311 Tehran, Iran
Verified email at iau-tnb.ac.ir
Title
Cited by
Cited by
Year
Gate-controlled valley transport and Goos–Hänchen effect in monolayer WS2
H Ghadiri, A Saffarzadeh
Journal of Physics: Condensed Matter 29 (11), 115303, 2017
152017
Influence of thickness error on the operation of adjustable magneto-optical isolators
M Sharifian, H Ghadiri, M Zamani, M Ghanaatshoar
Applied Optics 51 (20), 4873-4878, 2012
152012
Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS2/WS2 planar heterojunctions
H Ghadiri, A Saffarzadeh
Journal of Applied Physics 123 (10), 2018
142018
Electron beam splitting at topological insulator surface states and a proposal for electronic Goos-Hänchen shift measurement
H Ghadiri, A Saffarzadeh
Physical Review B 105 (8), 085415, 2022
92022
Electron scattering in a superlattice of line defects on the surface of topological insulators
H Dehnavi, AA Masoudi, M Saadat, H Ghadiri, A Saffarzadeh
Journal of Physics: Condensed Matter 32 (41), 415002, 2020
42020
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Articles 1–5