Anurag Chaudhry
Anurag Chaudhry
Unknown affiliation
Verified email at ucdavis.edu
TitleCited byYear
Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review
A Chaudhry, MJ Kumar
IEEE Transactions on Device and Materials Reliability 4 (1), 99-109, 2004
3062004
Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs
MJ Kumar, A Chaudhry
IEEE Transactions on Electron Devices 51 (4), 569-574, 2004
2592004
Field programmable logic device with efficient memory utilization
M Singh, A Chaudhry
US Patent 6,788,104, 2004
1372004
Investigation of the novel attributes of a fully depleted dual-material gate SOI MOSFET
A Chaudhry, MJ Kumar
IEEE Transactions on Electron Devices 51 (9), 1463-1467, 2004
1342004
Eu2+-doped Ba2CsI5, a new high-performance scintillator
ED Bourret-Courchesne, G Bizarri, R Borade, Z Yan, SM Hanrahan, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2009
1142009
First-principles study of luminescence in Ce-doped inorganic scintillators
A Canning, A Chaudhry, R Boutchko, N Grønbech-Jensen
Physical Review B 83 (12), 125115, 2011
1032011
Ultra-low contact resistance of epitaxially interfaced bridged silicon nanowires
A Chaudhry, V Ramamurthi, E Fong, MS Islam
Nano letters 7 (6), 1536-1541, 2007
792007
First-principles study of luminescence in Eu2+-doped inorganic scintillators
A Chaudhry, R Boutchko, S Chourou, G Zhang, N Grønbech-Jensen, ...
PHYSICAL REVIEW B 89, 155105, 2014
652014
New scintillators discovered by high-throughput screening
S Derenzo, G Bizarri, R Borade, E Bourret-Courchesne, R Boutchko, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011
382011
Luminescence study of cerium-doped La2Hf2O7: Effects due to trivalent and tetravalent cerium and oxygen vacancies
Y Eagleman, M Weber, A Chaudhry, S Derenzo
Journal of luminescence 132 (11), 2889-2896, 2012
282012
Scintillation Properties of Eu-Activated Barium Fluoroiodide
G Gundiah, E Bourret-Courchesne, G Bizarri, SM Hanrahan, A Chaudhry, ...
IEEE Transactions on Nuclear Science 57 (3), 1702-1705, 2010
272010
First-principles studies of Ce-doped RE2M2O7 (RE = Y, La; M = Ti, Zr, Hf): A class of nonscintillators
A Chaudhry, A Canning, R Boutchko, MJ Weber, N Grønbech-Jensen, ...
Journal of Applied Physics 109 (8), 083708, 2011
262011
Dose radiation effects in FinFETs
X Wu, PCH Chan, A Orozco, A Vazquez, A Chaudhry, JP Colinge
Solid-state electronics 50 (2), 287-290, 2006
252006
First-principles studies and predictions of scintillation in Ce-doped materials
A Canning, R Boutchko, A Chaudhry, SE Derenzo
IEEE Transactions on Nuclear Science 56 (3), 944-948, 2009
232009
Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
R Kotlyar, SM Cea, G Dewey, B Chu-Kung, UE Avci, R Rios, A Chaudhry, ...
US Patent 8,890,120, 2014
222014
Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs)
T Schulz, W Xiong, CR Cleavelin, K Schruefer, M Gostkowski, K Matthews, ...
2005 IEEE International SOI Conference Proceedings, 154-156, 2005
172005
Cerium activated scintillation in yttrium halides: First principles theory and prediction
R Boutchko, A Canning, A Chaudhry, R Borade, E Bourret-Courchesne, ...
IEEE Transactions on Nuclear Science 56 (3), 977-981, 2009
142009
Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers
CC Kuo, K Oguz, ML Doczy, BS Doyle, S Suri, RS Chau, DL Kencke, ...
US Patent App. 14/039,668, 2015
132015
Lanthanide doped strontium-barium cesium halide scintillators
G Bizarri, E Bourret-Courchesne, SE Derenzo, RB Borade, G Gundiah, ...
US Patent 9,053,832, 2015
122015
Process modeling for advanced device technologies
SM Cea, S Botelho, A Chaudhry, P Fleischmann, MD Giles, A Grigoriev, ...
Journal of Computational Electronics 13 (1), 18-32, 2014
112014
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