Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002 | 1039 | 2002 |
Generalized Kohn-Sham schemes and the band-gap problem A Seidl, A Görling, P Vogl, JA Majewski, M Levy Physical Review B 53 (7), 3764, 1996 | 912 | 1996 |
Exact Kohn-Sham exchange potential in semiconductors M Städele, JA Majewski, P Vogl, A Görling Physical review letters 79 (11), 2089, 1997 | 406 | 1997 |
Exact exchange Kohn-Sham formalism applied to semiconductors M Städele, M Moukara, JA Majewski, P Vogl, A Görling Physical Review B 59 (15), 10031, 1999 | 373 | 1999 |
First-principles studies of the structural and optical properties of crystalline poly (para-phenylene) C Ambrosch-Draxl, JA Majewski, P Vogl, G Leising Physical review B 51 (15), 9668, 1995 | 254 | 1995 |
Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn) As M Sawicki, D Chiba, A Korbecka, Y Nishitani, JA Majewski, F Matsukura, ... Nature Physics 6 (1), 22, 2010 | 220 | 2010 |
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996 | 197 | 1996 |
Simple model for structural properties and crystal stability of sp-bonded solids JA Majewski, P Vogl Physical Review B 35 (18), 9666, 1987 | 188 | 1987 |
Ferromagnetic superexchange in Cr-based diluted magnetic semiconductors J Blinowski, P Kacman, JA Majewski Physical Review B 53 (15), 9524, 1996 | 149 | 1996 |
Nonlinear elasticity in III-N compounds: Ab initio calculations SP Łepkowski, JA Majewski, G Jurczak Physical Review B 72 (24), 245201, 2005 | 142 | 2005 |
Modeling of Semiconductor Nanostructures with nextnano^ 3 S Birner, S Hackenbuchner, M Sabathil, G Zandler, JA Majewski, ... Acta Physica Polonica Series A 110 (2), 111, 2006 | 116 | 2006 |
Ab initio calculations of third-order elastic constants and related properties for selected semiconductors M Łopuszyński, JA Majewski Physical Review B 76 (4), 045202, 2007 | 99 | 2007 |
Crystal stability and structural transition pressures of sp-bonded solids JA Majewski, P Vogl Physical review letters 57 (11), 1366, 1986 | 80 | 1986 |
Spin-dependent tunneling in modulated structures of (Ga, Mn) As P Sankowski, P Kacman, JA Majewski, T Dietl Physical Review B 75 (4), 045306, 2007 | 62 | 2007 |
Stability and band offsets of polar GaN/SiC (001) and AlN/SiC (001) interfaces M Städele, JA Majewski, P Vogl Physical Review B 56 (11), 6911, 1997 | 59 | 1997 |
Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors M Birowska, C Śliwa, JA Majewski, T Dietl Physical review letters 108 (23), 237203, 2012 | 58 | 2012 |
Van der Waals density functionals for graphene layers and graphite M Birowska, K Milowska, JA Majewski Acta Phys. Pol., A 120, 845-848, 2011 | 52 | 2011 |
g values of effective mass donors in Al x Ga 1− x N alloys MW Bayerl, MS Brandt, T Graf, O Ambacher, JA Majewski, M Stutzmann, ... Physical Review B 63 (16), 165204, 2001 | 52 | 2001 |
Electronic Structure of Biaxially-Strained Wurtzite Crystals GaN and AlN JA Majewski, M Städele, P Vogl MRS Online Proceedings Library Archive 449, 1996 | 52 | 1996 |
Towards fully quantum mechanical 3D device simulations M Sabathil, S Hackenbuchner, JA Majewski, G Zandler, P Vogl Journal of Computational Electronics 1 (1-2), 81-85, 2002 | 50 | 2002 |