| Gate‐Tunable Graphene–WSe2 Heterojunctions at the Schottky–Mott Limit SW LaGasse, P Dhakras, K Watanabe, T Taniguchi, JU Lee Advanced Materials 31 (24), 1901392, 2019 | 64 | 2019 |
| Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains P Agnihotri, P Dhakras, JU Lee Nano letters 16 (7), 4355-4360, 2016 | 56 | 2016 |
| Nanotechnology applications in water purification and waste water treatment: a review PA Dhakras International conference on nanoscience, engineering and technology (ICONSET …, 2011 | 35 | 2011 |
| Three fundamental devices in one: a reconfigurable multifunctional device in two-dimensional WSe2 P Dhakras, P Agnihotri, JU Lee Nanotechnology 28 (26), 265203, 2017 | 12 | 2017 |
| Direct measurement of the electron beam spatial intensity profile via carbon nanotube tomography MD Zotta, S Jois, P Dhakras, M Rodriguez, JU Lee Nano Letters 19 (7), 4435-4441, 2019 | 11 | 2019 |
| TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe2 P Dhakras, P Agnihotri, H Bakhru, HL Hughes, JU Lee IEEE Transactions on Nuclear Science 65 (1), 53-57, 2017 | 9 | 2017 |
| Zero dark leakage current single-walled carbon nanotube diodes P Dhakras, JU Lee Applied Physics Letters 109 (20), 2016 | 5 | 2016 |
| Two-parameter quasi-ballistic transport model for nanoscale transistors JU Lee, R Cuduvally, P Dhakras, P Nguyen, HL Hughes Scientific Reports 9 (1), 525, 2019 | 2 | 2019 |
| Ideal p–n Diodes from Single-Walled Carbon Nanotubes for Use in Solar Cells: Beating the Detailed Balance Limit of Efficiency PA Dhakras, E Comfort, JU Lee ACS Applied Nano Materials 2 (12), 7496-7502, 2019 | 1 | 2019 |
| Schottky–Mott Limit: Gate‐Tunable Graphene–WSe2 Heterojunctions at the Schottky–Mott Limit (Adv. Mater. 24/2019) SW LaGasse, P Dhakras, K Watanabe, T Taniguchi, JU Lee Advanced Materials 31 (24), 1970169, 2019 | 1 | 2019 |
| Beating the Detailed Balance Limit in Ideal Carbon Nanotube pn diodes P Dhakras, E Comfort, JU Lee Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Direct Measurement of the Electron Beam Intensity Profile via Carbon Nanotube Tomography M Zotta, S Jois, P Dhakras, M Rodriguez, JU Lee arXiv preprint arXiv:1902.02735, 2019 | | 2019 |
| Exploring Gated Nanoelectronic Devices Fabricated from 1D and 2D Materials PA Dhakras State University of New York at Albany, 2019 | | 2019 |
| Perfectly gate-tunable graphene-WSe2 van der Waal's heterostructure at the Schottky-Mott limit S Lagasse, P Dhakras, T Taniguchi, K Watanabe, JU Lee APS March Meeting Abstracts 2019, L54. 001, 2019 | | 2019 |
| Reconfigurable Carbon Nanotube Network Devices P Dhakras, S Lagasse, T Taniguchi, K Watanabe, S Wang, LM Peng, ... APS March Meeting Abstracts 2019, B12. 001, 2019 | | 2019 |
| Measuring the Electron Beam Induced Plasmon Response in Single-Walled Carbon Nanotube Devices M Zotta, S Jois, P Dhakras, JU Lee APS March Meeting Abstracts 2019, B12. 014, 2019 | | 2019 |
| Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe heterojunctions SW LaGasse, P Dhakras, T Taniguchi, K Watanabe, JU Lee arXiv preprint arXiv:1811.02660, 2018 | | 2018 |
| Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors R Cuduvally, P Dhakras, P Nguyen, HL Hughes, JU Lee arXiv preprint arXiv:1803.07920, 2018 | | 2018 |
| Reconfigurable WSe device: three fundamental devices in one. P Dhakras, P Agnihotri, JU Lee Bulletin of the American Physical Society 62, 2017 | | 2017 |
| Reconfigurable WSe2 device: three fundamental devices in one P Dhakras, P Agnihotri, JU Lee APS March Meeting Abstracts 2017, B32. 002, 2017 | | 2017 |
