| Reliability issues of SiC MOSFETs: A technology for high-temperature environments CY Liangchun, GT Dunne, KS Matocha, KP Cheung, JS Suehle, K Sheng IEEE Transactions on Device and Materials Reliability 10 (4), 418-426, 2010 | 262 | 2010 |
| Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung Journal of Applied Physics 108 (5), 2010 | 138 | 2010 |
| Random telegraph noise in highly scaled nMOSFETs JP Campbell, J Qin, KP Cheung, LC Yu, JS Suehle, A Oates, K Sheng 2009 IEEE International Reliability Physics Symposium, 382-388, 2009 | 109 | 2009 |
| Modeling and optimal device design for 4H-SiC super-junction devices L Yu, K Sheng IEEE Transactions on Electron Devices 55 (8), 1961-1969, 2008 | 57 | 2008 |
| Oxide reliability of SiC MOS devices L Yu, KP Cheung, J Campbell, JS Suehle, K Sheng 2008 IEEE International Integrated Reliability Workshop Final Report, 141-144, 2008 | 42 | 2008 |
| Silicon carbide integrated circuits with stable operation over a wide temperature range R Ghandi, CP Chen, L Yin, X Zhu, L Yu, S Arthur, F Ahmad, P Sandvik IEEE Electron Device Letters 35 (12), 1206-1208, 2014 | 41 | 2014 |
| Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs JP Campbell, LC Yu, KP Cheung, J Qin, JS Suehle, A Oates, K Sheng 2009 IEEE International Conference on IC Design and Technology, 17-20, 2009 | 38 | 2009 |
| 1.2 kV class SiC MOSFETs with improved performance over wide operating temperature P Losee, A Bolotnikov, L Yu, R Beaupre, Z Stum, S Kennerly, G Dunne, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 36 | 2014 |
| SiC MOSFET design considerations for reliable high voltage operation PA Losee, A Bolotnikov, LC Yu, G Dunne, D Esler, J Erlbaum, B Rowden, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-2.1-2A-2.8, 2017 | 35 | 2017 |
| High-frequency switching of SiC high-voltage LJFET K Sheng, Y Zhang, L Yu, M Su, JH Zhao IEEE Transactions on Power Electronics 24 (1), 271-277, 2009 | 35 | 2009 |
| High temperature characterization of SiC BJTs for power switching applications K Sheng, LC Yu, J Zhang, JH Zhao Solid-state electronics 50 (6), 1073-1079, 2006 | 33 | 2006 |
| Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states JT Ryan, LC Yu, JH Han, JJ Kopanski, KP Cheung, F Zhang, C Wang, ... Applied Physics Letters 98 (23), 2011 | 27 | 2011 |
| The origins of random telegraph noise in highly scaled SiON nMOSFETs JP Campbell, J Qin, KP Cheungl, L Yu, JS Suehlel, A Oates, K Sheng 2008 IEEE International Integrated Reliability Workshop Final Report, 105-109, 2008 | 27 | 2008 |
| Breaking the theoretical limit of SiC unipolar power device–A simulation study LC Yu, K Sheng Solid-state electronics 50 (6), 1062-1072, 2006 | 19 | 2006 |
| Channel hot-carrier effect of 4H-SiC MOSFET LC Yu, KP Cheung, JS Suehle, JP Campbell, K Sheng, AJ Lelis, SH Ryu Materials Science Forum 615, 813-816, 2009 | 14 | 2009 |
| A new interface defect spectroscopy method JT Ryan, LC Yu, JH Han, JJ Kopanski, KP Cheung, F Zhang, C Wang, ... 2011 International Reliability Physics Symposium, 3A. 4.1-3A. 4.5, 2011 | 10 | 2011 |
| Modeling and design of a monolithically integrated power converter on SiC LC Yu, K Sheng, JH Zhao Solid-state electronics 52 (10), 1625-1630, 2008 | 10 | 2008 |
| Gate oxide long-term reliability of 4H-SiC MOS devices LC Yu, KP Cheung, G Dunne, K Matocha, JS Suehle, K Sheng Materials Science Forum 645, 805-808, 2010 | 8 | 2010 |
| Readiness of SiC MOSFETs for aerospace and industrial applications L Stevanovic, PA Losee, S Kennerly, A Bolotnikov, B Rowden, ... Materials Science Forum 858, 894-899, 2016 | 7 | 2016 |
| 500° C silicon carbide MOSFET-based integrated circuits CP Chen, R Ghandi, L Yin, X Zhu, L Yu, S Arthur, P Sandvik Additional Papers and Presentations 2014 (HITEC), 000072-000075, 2014 | 7 | 2014 |
