Adrian Slav
Adrian Slav
National Institute of Materials Physics, Bucharest, ROMANIA
Verified email at infim.ro
TitleCited byYear
Hydroxyapatite films obtained by sol–gel and sputtering
TF Stoica, C Morosanu, A Slav, T Stoica, P Osiceanu, C Anastasescu, ...
Thin Solid Films 516 (22), 8112-8116, 2008
442008
Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
I Stavarache, AM Lepadatu, NG Gheorghe, RM Costescu, GE Stan, ...
Journal of Nanoparticle Research 13 (1), 221-232, 2011
262011
Optical characterization of TiO2-Ge nanocomposite films obtained by reactive magnetron sputtering
A Slav
Digest Journal of Nanomaterials and Biostructures 6 (3), 915-920, 2011
232011
How morphology determines the charge storage properties of Ge nanocrystals in HfO2
A Slav, C Palade, AM Lepadatu, ML Ciurea, VS Teodorescu, S Lazanu, ...
Scripta Materialia 113, 135-138, 2016
142016
Dense Ge nanocrystals embedded in TiO 2 with exponentially increased photoconduction by field effect
AM Lepadatu, A Slav, C Palade, I Dascalescu, M Enculescu, S Iftimie, ...
Scientific reports 8 (1), 4898, 2018
112018
Effects produced by iodine irradiation on high resistivity silicon
S Lazanu, A Slav, AM Lepadatu, I Stavarache, C Palade, G Iordache, ...
Applied Physics Letters 101 (24), 242106, 2012
102012
Thickness dependence of crystallization process for hydroxyapatite thin films
I Mercioniu, S Ciuca, I Pasuk, A Slav, C Morosanu, M Bercu
Journal of optoelectronics and advanced materials 9 (8), 2535-2538, 2007
92007
Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
AM Lepadatu, C Palade, A Slav, AV Maraloiu, S Lazanu, T Stoica, ...
Nanotechnology 28 (17), 175707, 2017
72017
Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
C Palade, AM Lepadatu, A Slav, S Lazanu, VS Teodorescu, T Stoica, ...
Applied Surface Science 428, 698-702, 2018
52018
Rough bioglass films prepared by magnetron sputtering
A Slav, A Ianculescu, C Morosanu, A Saranti, I Koutselas, S Agathopoulos, ...
Key Engineering Materials 361, 245-248, 2008
52008
Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
ML Ciurea, S Lazanu, A Slav, C Palade
EPL (Europhysics Letters) 108 (3), 36004, 2014
42014
Photosensitive GeSi/TiO2multilayers in VIS-NIR
C Palade, I Dascalescu, A Slav, AM Lepadatu, S Lazanu, T Stoica, ...
2017 International Semiconductor Conference (CAS), 67-70, 2017
32017
Magnetic properties of iron-modified amorphous carbon
SG Yastrebov, VI Ivanov-Omskii, V Pop, C Morosanu, A Slav, J Voiron
Semiconductors 39 (7), 840-844, 2005
32005
Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
C Palade, A Slav, AM Lepadatu, AV Maraloiu, I Dascalescu, S Iftimie, ...
Applied Physics Letters 113 (21), 213106, 2018
22018
Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2multilayers
A Slav, C Palade, I Stavarache, VS Teodorescu, ML Ciurea, R Müller, ...
2017 International Semiconductor Conference (CAS), 63-66, 2017
22017
Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
C Palade, A Slav, AM Lepadatu, VS Teodorescu, ML Ciurea
2014 International Semiconductor Conference (CAS), 59-62, 2014
22014
Study of the interactions of ions in silicon: Transient processes and defect production
S Lazanu, I Lazanu, G Iordache, I Stavarache, A Lepadatu, A Slav
CAS 2010 Proceedings (International Semiconductor Conference) 2, 329-332, 2010
22010
Non-volatile memory structures with Ge NCs-HfO2intermediate layer
C Palade, A Slav, AM Lepadatu, AV Maraloiu, S Lazanu, C Logofatu, ...
2016 International Semiconductor Conference (CAS), 163-166, 2016
12016
Studies of long time and transient effects induced by radiation in crystalline materials
S Lazanu, I Lazanu, G Iordache, I Stavarache, A Lepadatu, A Slav
CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 261-264, 2011
12011
Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
C Palade, A Slav, AM Lepadatu, I Stavarache, I Dascalescu, AV Maraloiu, ...
Nanotechnology 30 (44), 445501, 2019
2019
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