| Fast and slow carrier recombination transients in highly excited 4Hand 3CSiC crystals at room temperature P Ščajev, V Gudelis, K Jarašiūnas, PB Klein Journal of Applied Physics 108 (2), 023705, 2010 | 78 | 2010 |
| Carrier dynamics in bulk GaN P Šcajev, K Jarašiūnas, S Okur, Ü Özgür, H Morkoç Journal of Applied Physics 111 (2), 023702, 2012 | 74 | 2012 |
| Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers P Ščajev, A Usikov, V Soukhoveev, R Aleksiejūnas, K Jarašiūnas Applied Physics Letters 98 (20), 202105, 2011 | 33 | 2011 |
| Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives P Scajev, C Qin, R Aleksieju̅nas, P Baronas, S Miasojedovas, T Fujihara, ... The journal of physical chemistry letters 9 (12), 3167-3172, 2018 | 32 | 2018 |
| Nonequilibrium carrier dynamics in bulk HPHT diamond at two‐photon carrier generation P Ščajev, V Gudelis, E Ivakin, K Jarašiūnas physica status solidi (a) 208 (9), 2067-2072, 2011 | 32 | 2011 |
| Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites P Ščajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, ... The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017 | 31 | 2017 |
| Anisotropy of free-carrier absorption and diffusivity in m-plane GaN P Ščajev, K Jarašiūnas, Ü Özgür, H Morkoç, J Leach, T Paskova Applied Physics Letters 100 (2), 022112, 2012 | 26 | 2012 |
| Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques P Ščajev, S Miasojedovas, A Mekys, D Kuciauskas, KG Lynn, SK Swain, ... Journal of Applied Physics 123 (2), 025704, 2018 | 25 | 2018 |
| Temperature-and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC P Ščajev, K Jarašiūnas Journal of Physics D: Applied Physics 46 (26), 265304, 2013 | 25 | 2013 |
| Carrier recombination and diffusivity in microcrystalline CVD‐grown and single‐crystalline HPHT diamonds P Ščajev, V Gudelis, K Jarašiūnas, I Kisialiou, E Ivakin, M Nesládek, ... physica status solidi (a) 209 (9), 1744-1749, 2012 | 24 | 2012 |
| A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H-and 6H-SiC crystals P Ščajev, M Kato, K Jarašiūnas Journal of Physics D: Applied Physics 44 (36), 365402, 2011 | 22 | 2011 |
| Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates P Ščajev, J Hassan, K Jarašiūnas, M Kato, A Henry, JP Bergman Journal of electronic materials 40 (4), 394-399, 2011 | 19 | 2011 |
| Radiative efficiency and charge‐carrier lifetimes and diffusion length in polycrystalline CdSeTe heterostructures D Kuciauskas, J Moseley, P Ščajev, D Albin physica status solidi (RRL)Rapid Research Letters 14 (3), 1900606, 2020 | 18 | 2020 |
| Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation P Ščajev, T Malinauskas, L Lubys, E Ivakin, M Nesladek, K Haenen, ... physica status solidi (RRL)Rapid Research Letters 5 (5‐6), 193-195, 2011 | 18 | 2011 |
| Light-induced reflectivity transients in black-Si nanoneedles P Ščajev, T Malinauskas, G Seniutinas, MD Arnold, A Gentle, ... Solar Energy Materials and Solar Cells 144, 221-227, 2016 | 15 | 2016 |
| Injection and temperature dependent carrier recombination rate and diffusion length in freestanding CVD diamond P Ščajev, V Gudelis, A Tallaire, J Barjon, K Jarašiūnas physica status solidi (a) 210 (10), 2016-2021, 2013 | 15 | 2013 |
| Impact of diffusivity to carrier recombination rate in nitride semiconductors: from bulk GaN to (In, Ga) N quantum wells R Aleksiejūnas, P Ščajev, S Nargelas, T Malinauskas, A Kadys, ... Japanese Journal of Applied Physics 52 (8S), 08JK01, 2013 | 14 | 2013 |
| Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers P Ščajev, J Jurkevičius, J Mickevičius, K Jarašiūnas, H Kato Diamond and Related Materials 57, 9-16, 2015 | 12 | 2015 |
| Application of a time-resolved four-wave mixing technique for the determination of thermal properties of 4HSiC crystals P Ščajev, K Jarašiūnas Journal of Physics D: Applied Physics 42 (5), 055413, 2009 | 12 | 2009 |
| Luminescence properties of LiGaO2 crystal L Trinkler, A Trukhin, B Berzina, V Korsaks, P Ščajev, R Nedzinskas, ... Optical Materials 69, 449-459, 2017 | 11 | 2017 |
Ramunas AleksiejunasVilnius UniversityPatvirtintas el. paštas ff.vu.lt
