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Pratyush Buragohain
Pratyush Buragohain
Components Research, Intel Corp.
Verified email at intel.com
Title
Cited by
Cited by
Year
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
A Chernikova, M Kozodaev, A Markeev, D Negrov, M Spiridonov, ...
ACS applied materials & interfaces 8 (11), 7232-7237, 2016
2262016
Nanoscopic studies of domain structure dynamics in ferroelectric La: HfO2 capacitors
P Buragohain, C Richter, T Schenk, H Lu, T Mikolajick, U Schroeder, ...
Applied Physics Letters 112 (22), 2018
1062018
Intrinsic ferroelectricity in Y-doped HfO2 thin films
Y Yun, P Buragohain, M Li, Z Ahmadi, Y Zhang, X Li, H Wang, L Tao, ...
Nature Materials, 21, 903–909 (2022), 2022
852022
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors
P Buragohain, A Erickson, P Kariuki, T Mittmann, C Richter, PD Lomenzo, ...
ACS applied materials & interfaces 11 (38), 35115-35121, 2019
722019
Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations
A Chouprik, S Zakharchenko, M Spiridonov, S Zarubin, A Chernikova, ...
ACS applied materials & interfaces 10 (10), 8818-8826, 2018
692018
Piezoelectricity in hafnia
S Dutta, P Buragohain, S Glinsek, C Richter, H Aramberri, H Lu, ...
Nature Communications 12 (1), 7301, 2021
432021
Voltage controlled Néel vector rotation in zero magnetic field
A Mahmood, W Echtenkamp, M Street, JL Wang, S Cao, T Komesu, ...
Nature communications 12 (1), 1674, 2021
372021
Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions
M Abuwasib, H Lu, T Li, P Buragohain, H Lee, CB Eom, A Gruverman, ...
Applied Physics Letters 108 (15), 2016
362016
Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y: HfO2 Thin Film Capacitors
P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ...
Advanced Functional Materials, 2108876, 2021
342021
Probing Antiferroelectric‐Ferroelectric Phase Transitions in PbZrO3 Capacitors by Piezoresponse Force Microscopy
H Lu, S Glinsek, P Buragohain, E Defay, J Iñiguez, A Gruverman
Advanced Functional Materials 30 (45), 2003622, 2020
262020
Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect
PD Lomenzo, M Materano, T Mittmann, P Buragohain, A Gruverman, ...
Advanced Electronic Materials 8 (1), 2100556, 2022
252022
Quantification of the electromechanical measurements by piezoresponse force microscopy
P Buragohain, H Lu, C Richter, T Schenk, P Kariuki, S Glinsek, ...
Advanced Materials 34 (47), 2206237, 2022
182022
Electroresistance effect in MoS2-Hf0. 5Zr0. 5O2 heterojunctions
P Chaudhary, P Buragohain, M Kozodaev, S Zarubin, V Mikheev, ...
Applied Physics Letters 118 (8), 2021
142021
5Zr0. 5O2 ferroelectric films on Si, ACS Appl. Mater
A Chernikova, M Kozodaev, A Markeev, D Negrov, M Spiridonov, ...
Interfaces 8 (11), 2016
72016
Process integration and future outlook of 2D transistors
KP O’Brien, CH Naylor, C Dorow, K Maxey, AV Penumatcha, A Vyatskikh, ...
nature communications 14 (1), 6400, 2023
62023
Spontaneous polarization in an ultrathin improper-ferroelectric/dielectric bilayer in a capacitor structure at cryogenic temperatures
Y Yun, P Buragohain, AS Thind, Y Yin, X Li, X Jiang, R Mishra, ...
Physical Review Applied 18 (3), 034071, 2022
52022
Harnessing Phase Transitions in Multifunctional Antiferroelectric ZrO2
PD Lomenzo, M Materano, T Mittmann, P Buragohain, A Gruverman, ...
Adv. Funct. Mater., 2021
22021
Absence of critical thickness in improper ferroelectric hexagonal-YbFeO3 thin films
X Xu, Y Yun, P Buragohain, A Thind, Y Yin, X Li, X Jiang, R Mishra, ...
22020
Voltage controlled Néel vector rotation in zero magnetic field at CMOS-compatible temperatures
A Mahmood, W Echtenkamp, M Street, JL Wang, S Cao, T Komesu, ...
22020
Investigation of local and integral polarization switching behavior of ultrathin HfObased films
P Buragohain, O Bak, A Chernikova, A Zenkevich, U Schroeder, ...
Bulletin of the American Physical Society 62, 2017
22017
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