Neil Curson
Neil Curson
Professor of Nanoelectronics, London Centre for Nanotechnology, UCL
Verified email at - Homepage
Cited by
Cited by
Atomically precise placement of single dopants in Si
SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ...
Physical review letters 91 (13), 136104, 2003
Towards the fabrication of phosphorus qubits for a silicon quantum computer
JL O’Brien, SR Schofield, MY Simmons, RG Clark, AS Dzurak, NJ Curson, ...
Physical Review B 64 (16), 161401, 2001
Toward atomic-scale device fabrication in silicon using scanning probe microscopy
FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ...
Nano Letters 4 (10), 1969-1973, 2004
Quantum engineering at the silicon surface using dangling bonds
SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler
Nature communications 4 (1), 1649, 2013
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ...
Applied physics letters 81 (17), 3197-3199, 2002
Progress in silicon-based quantum computing
RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ...
Philosophical Transactions of the Royal Society of London. Series A …, 2003
Thermal dissociation and desorption of on Si(001): A reinterpretation of spectroscopic data
HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ...
Physical Review B 74 (19), 195310, 2006
Phosphine dissociation on the Si (001) surface
HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical review letters 93 (22), 226102, 2004
Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy
L Oberbeck, NJ Curson, T Hallam, MY Simmons, G Bilger, RG Clark
Applied Physics Letters 85 (8), 1359-1361, 2004
Nondestructive imaging of atomically thin nanostructures buried in silicon
G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ...
Science advances 3 (6), e1602586, 2017
Scanning probe microscopy for silicon device fabrication
MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ...
Molecular Simulation 31 (6-7), 505-515, 2005
Single photon detection with a quantum dot transistor
AJ Shields, MP O'Sullivan, I Farrer, DA Ritchie, ML Leadbeater, NK Patel, ...
Japanese Journal of Applied Physics 40 (3S), 2058, 2001
Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures
O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ...
Physical Review B 72 (12), 125328, 2005
STM characterization of the Si-P heterodimer
NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark
Physical Review B 69 (19), 195303, 2004
Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy
TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ...
ACS nano 14 (3), 3316-3327, 2020
Reaction paths of phosphine dissociation on silicon (001)
O Warschkow, NJ Curson, SR Schofield, NA Marks, HF Wilson, ...
The Journal of Chemical Physics 144 (1), 2016
Ballistic transport in a one-dimensional channel fabricated using an atomic force microscope
NJ Curson, R Nemutudi, NJ Appleyard, M Pepper, DA Ritchie, GAC Jones
Applied Physics Letters 78 (22), 3466-3468, 2001
Valence surface electronic states on Ge (001)
MW Radny, GA Shah, SR Schofield, PV Smith, NJ Curson
Physical review letters 100 (24), 246807, 2008
Phosphine dissociation and diffusion on Si (001) observed at the atomic scale
SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ...
The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006
Imaging charged defects on clean with scanning tunneling microscopy
GW Brown, H Grube, ME Hawley, SR Schofield, NJ Curson, MY Simmons, ...
Journal of applied physics 92 (2), 820-824, 2002
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