| Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016 | 752 | 2016 |
| Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015 | 458 | 2015 |
| Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature communications 6 (1), 7311, 2015 | 455 | 2015 |
| Silicon nanowire array photoelectrochemical cells AP Goodey, SM Eichfeld, KK Lew, JM Redwing, TE Mallouk Journal of the American Chemical Society 129 (41), 12344-12345, 2007 | 281 | 2007 |
| Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ... Acs Nano 10 (3), 3580-3588, 2016 | 266 | 2016 |
| Realizing large-scale, electronic-grade two-dimensional semiconductors YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ... ACS nano 12 (2), 965-975, 2018 | 239 | 2018 |
| Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides A Azizi, S Eichfeld, G Geschwind, K Zhang, B Jiang, D Mukherjee, ... ACS nano 9 (5), 4882-4890, 2015 | 199 | 2015 |
| ACS nano Z Li Nanoporous Glass Integrated in Volumetric Bar-Chart Chip for Point-of-Care …, 2016 | 147* | 2016 |
| Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers JH Park, S Vishwanath, X Liu, H Zhou, SM Eichfeld, SK Fullerton-Shirey, ... ACS nano 10 (4), 4258-4267, 2016 | 94 | 2016 |
| First principles kinetic Monte Carlo study on the growth patterns of WSe2 monolayer Y Nie, C Liang, K Zhang, R Zhao, SM Eichfeld, PR Cha, L Colombo, ... 2D Materials 3 (2), 025029, 2016 | 91 | 2016 |
| Orientation dependence of nickel silicide formation in contacts to silicon nanowires NS Dellas, BZ Liu, SM Eichfeld, CM Eichfeld, TS Mayer, SE Mohney Journal of applied physics 105 (9), 2009 | 67 | 2009 |
| Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry SM Eichfeld, CM Eichfeld, YC Lin, L Hossain, JA Robinson Apl Materials 2 (9), 2014 | 66 | 2014 |
| Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films X Zhang, ZY Al Balushi, F Zhang, TH Choudhury, SM Eichfeld, N Alem, ... Journal of Electronic Materials 45, 6273-6279, 2016 | 65 | 2016 |
| One dimensional metallic edges in atomically thin WSe2 induced by air exposure R Addou, CM Smyth, JY Noh, YC Lin, Y Pan, SM Eichfeld, S Fölsch, ... 2D Materials 5 (2), 025017, 2018 | 62 | 2018 |
| Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth SM Eichfeld, VO Colon, Y Nie, K Cho, JA Robinson 2D Materials 3 (2), 025015, 2016 | 54 | 2016 |
| Selective-area growth and controlled substrate coupling of transition metal dichalcogenides BM Bersch, SM Eichfeld, YC Lin, K Zhang, GR Bhimanapati, AF Piasecki, ... 2D Materials 4 (2), 025083, 2017 | 49 | 2017 |
| Large-area synthesis of WSe2 from WO3 by selenium–oxygen ion exchange P Browning, S Eichfeld, K Zhang, L Hossain, YC Lin, K Wang, N Lu, ... 2D Materials 2 (1), 014003, 2015 | 48 | 2015 |
| Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires SM Woodruff, NS Dellas, BZ Liu, SM Eichfeld, TS Mayer, JM Redwing, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 48 | 2008 |
| Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays SM Eichfeld, TT Ho, CM Eichfeld, A Cranmer, SE Mohney, TS Mayer, ... Nanotechnology 18 (31), 315201, 2007 | 48 | 2007 |
| Oxidation of silicon nanowires for top-gated field effect transistors B Liu, Y Wang, T Ho, KK Lew, SM Eichfeld, JM Redwing, TS Mayer, ... Journal of Vacuum Science & Technology A 26 (3), 370-374, 2008 | 44 | 2008 |
