| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 30 | 2015 |
| Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ... Applied Surface Science 427, 1027-1032, 2018 | 27 | 2018 |
| Carrier Recombination and Diffusion in Wet-Cast Tin Iodide Perovskite Layers Under High Intensity Photoexcitation P Ščajev, R Aleksieju̅nas, P Baronas, D Litvinas, M Kolenda, C Qin, ... The Journal of Physical Chemistry C 123 (32), 19275-19281, 2019 | 11 | 2019 |
| Photoluminescence efficiency of BGaN epitaxial layers with high boron content J Jurkevičius, J Mickevičius, A Kadys, M Kolenda, G Tamulaitis Physica B: Condensed Matter 492, 23-26, 2016 | 11 | 2016 |
| Direct Auger recombination and density-dependent hole diffusion in InN R Aleksiejūnas, Ž Podlipskas, S Nargelas, A Kadys, M Kolenda, ... Scientific reports 8 (1), 4621, 2018 | 10 | 2018 |
| Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage V Svrcek, M Kolenda, A Kadys, I Reklaitis, D Dobrovolskas, ... Nanomaterials 8 (12), 1039, 2018 | 9 | 2018 |
| Extreme radiation resistance in InN Ž Podlipskas, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, ... Journal of Alloys and Compounds 789, 48-55, 2019 | 7 | 2019 |
| Spectral dependence of THz emission from InN and InGaN layers R Norkus, R Aleksiejūnas, A Kadys, M Kolenda, G Tamulaitis, A Krotkus Scientific reports 9 (1), 7077, 2019 | 5 | 2019 |
| Influence of proton irradiation on carrier mobility in InN epitaxial layers A Mekys, J Jurkevičius, A Kadys, M Kolenda, V Kovalevskij, G Tamulaitis Thin Solid Films 692, 137619, 2019 | 4 | 2019 |
| Development of polarity inversion in a GaN waveguide structure for modal phase matching M Kolenda, D Kezys, I Reklaitis, E Radiunas, R Ritasalo, A Kadys, ... Journal of Materials Science 55 (26), 12008-12021, 2020 | 3 | 2020 |
| Quasi-Phase-Matching Method Based on Coupling Compensation for Second Harmonic Generation in GaN Waveguides R Petruškevičius, D Kezys, T Malinauskas, M Kolenda, R Tomašiünas 2019 21st International Conference on Transparent Optical Networks (ICTON), 1-3, 2019 | 1 | 2019 |
| Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire J Mickevičius, D Dobrovolskas, T Malinauskas, M Kolenda, A Kadys, ... Thin Solid Films 680, 89-93, 2019 | 1 | 2019 |
| Green second-harmonic generation in a periodically poled planar GaN waveguide M Kolenda, D Kezys, T Grinys, A Vaitkevičus, A Kadys, I Reklaitis, ... Optical and Quantum Electronics 56 (5), 1-16, 2024 | | 2024 |
| GaN antros eilės netiesinių optinių bangolaidžių formavimas ir tyrimas R Tomašiūnas, M Kolenda, D Kezys, A Kadys, T Grinys, V Vaičaitis, ... 45-oji Lietuvos nacionalinė fizikos konferencija, 2023 m. spalio 25-27d …, 2023 | | 2023 |
| Nepusiausvirųjų krūvininkų dinamika išsigimusiame N-poliškumo GaN K Nomeika, L Šiaulys, Ž Podlipskas, M Vaičiulis, M Kolenda, A Kadys, ... 45-oji Lietuvos nacionalinė fizikos konferencija, 2023 m. spalio 25-27d …, 2023 | | 2023 |
| The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition M Kolenda, A Kadys, T Malinauskas, E Radiunas, R Ritasalo, ... Materials Science and Engineering: B 284, 115850, 2022 | | 2022 |
| Fabrication, investigation, and application of III-nitride semiconductor structures in devices of a specific spectral range. M Kolenda Vilniaus universitetas, 2022 | | 2022 |
| InN/GaN np struktūrų auginimas MOVPE būdu ir tyrimai M Kolenda Vilniaus universitetas, 2017 | | 2017 |
| GaN antros eilės netiesinių optinių bangolaidžių formavimas ir tyrimas Formation and investigation of GaN second-order non-linear optical waveguides R Tomašiūnas, M Kolenda, D Kezys, A Kadys, T Grinys, V Vaičaitis, ... | | |
| Poliškumo Inversija GaN Sluoksniuose panaudojant ALD-Al2O3 Tarpinį Sluoksnį Growth and Investigation of Polarity Inversed GaN Layers on ALD-Al2O3 M Kolenda, A Kadys, T Malinauskas, E Radiunas, R Ritasalo, T Grinys, ... | | |
