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Andreas Beyer
Andreas Beyer
Verified email at physik.uni-marburg.de - Homepage
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Cited by
Year
GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration
K Volz, A Beyer, W Witte, J Ohlmann, I Németh, B Kunert, W Stolz
Journal of Crystal Growth 315 (1), 37-47, 2011
4002011
Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate
S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ...
Applied Physics Letters 99 (7), 2011
1822011
A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
NW Rosemann, JP Eußner, A Beyer, SW Koch, K Volz, S Dehnen, ...
Science 352 (6291), 1301-1304, 2016
1522016
GaP heteroepitaxy on Si (001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
A Beyer, J Ohlmann, S Liebich, H Heim, G Witte, W Stolz, K Volz
Journal of Applied Physics 111 (8), 2012
1182012
Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors
T You, N Du, S Slesazeck, T Mikolajick, G Li, D Bürger, I Skorupa, ...
ACS applied materials & interfaces 6 (22), 19758-19765, 2014
942014
The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–xyCoxMny)O2 Cathode Materials
S Ahmed, A Pokle, S Schweidler, A Beyer, M Bianchini, F Walther, ...
ACS nano 13 (9), 10694-10704, 2019
892019
In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy
H Döscher, T Hannappel, B Kunert, A Beyer, K Volz, W Stolz
Applied Physics Letters 93 (17), 2008
852008
Direct growth of III–V/silicon triple-junction solar cells with 19.7% efficiency
M Feifel, J Ohlmann, J Benick, M Hermle, J Belz, A Beyer, K Volz, ...
IEEE Journal of Photovoltaics 8 (6), 1590-1595, 2018
712018
MOVPE grown gallium phosphide–silicon heterojunction solar cells
M Feifel, J Ohlmann, J Benick, T Rachow, S Janz, M Hermle, F Dimroth, ...
IEEE Journal of Photovoltaics 7 (2), 502-507, 2017
692017
Synthesis and characterization of colloidal fluorescent silver nanoclusters
S Huang, C Pfeiffer, J Hollmann, S Friede, JJC Chen, A Beyer, B Haas, ...
Langmuir 28 (24), 8915-8919, 2012
682012
Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A Beyer, I Németh, S Liebich, J Ohlmann, W Stolz, K Volz
Journal of Applied Physics 109 (8), 2011
662011
STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
JO Oelerich, L Duschek, J Belz, A Beyer, SD Baranovskii, K Volz
Ultramicroscopy 177, 91-96, 2017
612017
Monitoring the thermally induced transition from sp3-hybridized into sp2-hybridized carbons
DB Schüpfer, F Badaczewski, J Peilstöcker, JM Guerra-Castro, H Shim, ...
Carbon 172, 214-227, 2021
552021
Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material
S Ahmed, M Bianchini, A Pokle, MS Munde, P Hartmann, T Brezesinski, ...
Advanced Energy Materials 10 (25), 2001026, 2020
552020
Atomic structure of (110) anti-phase boundaries in GaP on Si (001)
A Beyer, B Haas, KI Gries, K Werner, M Luysberg, W Stolz, K Volz
Applied Physics Letters 103 (3), 2013
462013
Pyramidal structure formation at the interface between III/V semiconductors and silicon
A Beyer, A Stegmüller, JO Oelerich, K Jandieri, K Werner, G Mette, ...
Chemistry of Materials 28 (10), 3265-3275, 2016
442016
Investigation of the microstructure of metallic droplets on Ga (AsBi)/GaAs
E Sterzer, N Knaub, P Ludewig, R Straubinger, A Beyer, K Volz
Journal of crystal growth 408, 71-77, 2014
432014
Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy
H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ...
Journal of Crystal Growth 315 (1), 16-21, 2011
432011
Structural characteristics of gallium metal deposited on Si (0 0 1) by MOCVD
K Werner, A Beyer, JO Oelerich, SD Baranovskii, W Stolz, K Volz
Journal of crystal growth 405, 102-109, 2014
402014
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
L Desplanque, S El Kazzi, C Coinon, S Ziegler, B Kunert, A Beyer, K Volz, ...
Applied Physics Letters 101 (14), 2012
372012
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