Two-Dimensional MoS2-Based Electrochemical Biosensor for Highly Selective Detection of Glutathione B Rawat, KK Mishra, U Barman, L Arora, D Pal, RP Paily IEEE Sensors Journal 20 (13), 6937-6944, 2020 | 26 | 2020 |
Analysis of graphene tunnel field-effect transistors for analog/RF applications B Rawat, R Paily IEEE Transactions on Electron Devices 62 (8), 2663-2669, 2015 | 26 | 2015 |
Transition metal dichalcogenide-based field-effect transistors for analog/mixed-signal applications B Rawat, MM Vinaya, R Paily IEEE Transactions on Electron Devices 66 (5), 2424-2430, 2019 | 21 | 2019 |
Benchmarking of analog/RF performance of fin-FET, NW-FET, and NS-FET in the ultimate scaling limit A Goel, A Rawat, B Rawat IEEE Transactions on Electron Devices 69 (3), 1298-1305, 2022 | 17 | 2022 |
Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory BR Aditya Kuber Parit, Mani Shankar Yadav, Avinash Kumar Gupta, Alexey Mikhaylov Chaos, Solitons & Fractals 145, 2021 | 16 | 2021 |
Modeling of graphene-based field-effect transistors through a 1-D real-space approach B Rawat, R Paily Journal of Computational Electronics 17 (1), 90-100, 2018 | 16 | 2018 |
Performance projection of bilayer graphene nanoribbon FET through quantum mechanical simulation B Rawat, R Paily Semiconductor Science and Technology 31 (12), 125004, 2016 | 10 | 2016 |
Performance evaluation of bilayer graphene nanoribbon tunnel FETs for digital and analog applications B Rawat, R Paily IEEE Transactions on Nanotechnology 16 (3), 411-416, 2017 | 9 | 2017 |
Performance projection of 2-d material-based cmos inverters for sub-10-nm channel length A Rawat, AK Gupta, B Rawat IEEE Transactions on Electron Devices 68 (7), 3622-3629, 2021 | 8 | 2021 |
Room Temperature Operated PEDOT: PSS Based Flexible and Disposable NO2 Gas Sensor A Beniwal, P Ganguly, R Gond, B Rawat, C Li IEEE Sensors Letters, 2023 | 1 | 2023 |
Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering K Poojith, K Varshney, MS Yadav, D Das, B Rawat 2022 IEEE 7th International conference for Convergence in Technology (I2CT), 1-6, 2022 | 1 | 2022 |
Numerical modeling and analysis of graphene based field effect transistors B Rawat Guwahati, 2017 | 1 | 2017 |
Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory AK Gupta, MS Yadav, B Rawat Memories-Materials, Devices, Circuits and Systems 5, 100080, 2023 | | 2023 |
Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode-Based Memristor K Varshney, MS Yadav, B Rawat, DM Das IEEE Transactions on Electron Devices, 2023 | | 2023 |
The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study A Rawat, B Rawat IEEE Transactions on Electron Devices, 2023 | | 2023 |
Fabrication and Characterization of Liquid Phase Exfoliated MoS2 Nanosheet for Gas Sensing Application R Gond, A Rawat, M Baghoria, B Prakash, B Rawat 2023 IEEE Applied Sensing Conference (APSCON), 1-3, 2023 | | 2023 |
Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing K Varshney, MS Yadav, DM Das, B Rawat 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-6, 2022 | | 2022 |
Performance of Two-Dimensional MoS2 Field-Effect Transistor in the Presence of Oxide-Channel Imperfection A Rawat, A Goel, B Rawat 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | | 2022 |
Layer by layer Self-assembled MoS2-ZnO Heterostructure for Near Room Temperature NO2 Gas Sensor R Gond, P Shukla, M Baghoria, B Prakash, B Rawat 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | | 2022 |
Finding Analog/RF Performance of Inserted High-K FinFET for Sub-5 nm Technology Node A Goel, A Rawat, B Rawat 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022 | | 2022 |