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Brajesh Rawat
Brajesh Rawat
Assistant Professor, Indian Institute of Technology Ropar, Rupnagar-140001, Punjab, India
Verified email at iitrpr.ac.in - Homepage
Title
Cited by
Cited by
Year
Two-Dimensional MoS2-Based Electrochemical Biosensor for Highly Selective Detection of Glutathione
B Rawat, KK Mishra, U Barman, L Arora, D Pal, RP Paily
IEEE Sensors Journal 20 (13), 6937-6944, 2020
262020
Analysis of graphene tunnel field-effect transistors for analog/RF applications
B Rawat, R Paily
IEEE Transactions on Electron Devices 62 (8), 2663-2669, 2015
262015
Transition metal dichalcogenide-based field-effect transistors for analog/mixed-signal applications
B Rawat, MM Vinaya, R Paily
IEEE Transactions on Electron Devices 66 (5), 2424-2430, 2019
212019
Benchmarking of analog/RF performance of fin-FET, NW-FET, and NS-FET in the ultimate scaling limit
A Goel, A Rawat, B Rawat
IEEE Transactions on Electron Devices 69 (3), 1298-1305, 2022
172022
Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory
BR Aditya Kuber Parit, Mani Shankar Yadav, Avinash Kumar Gupta, Alexey Mikhaylov
Chaos, Solitons & Fractals 145, 2021
162021
Modeling of graphene-based field-effect transistors through a 1-D real-space approach
B Rawat, R Paily
Journal of Computational Electronics 17 (1), 90-100, 2018
162018
Performance projection of bilayer graphene nanoribbon FET through quantum mechanical simulation
B Rawat, R Paily
Semiconductor Science and Technology 31 (12), 125004, 2016
102016
Performance evaluation of bilayer graphene nanoribbon tunnel FETs for digital and analog applications
B Rawat, R Paily
IEEE Transactions on Nanotechnology 16 (3), 411-416, 2017
92017
Performance projection of 2-d material-based cmos inverters for sub-10-nm channel length
A Rawat, AK Gupta, B Rawat
IEEE Transactions on Electron Devices 68 (7), 3622-3629, 2021
82021
Room Temperature Operated PEDOT: PSS Based Flexible and Disposable NO2 Gas Sensor
A Beniwal, P Ganguly, R Gond, B Rawat, C Li
IEEE Sensors Letters, 2023
12023
Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering
K Poojith, K Varshney, MS Yadav, D Das, B Rawat
2022 IEEE 7th International conference for Convergence in Technology (I2CT), 1-6, 2022
12022
Numerical modeling and analysis of graphene based field effect transistors
B Rawat
Guwahati, 2017
12017
Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory
AK Gupta, MS Yadav, B Rawat
Memories-Materials, Devices, Circuits and Systems 5, 100080, 2023
2023
Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode-Based Memristor
K Varshney, MS Yadav, B Rawat, DM Das
IEEE Transactions on Electron Devices, 2023
2023
The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study
A Rawat, B Rawat
IEEE Transactions on Electron Devices, 2023
2023
Fabrication and Characterization of Liquid Phase Exfoliated MoS2 Nanosheet for Gas Sensing Application
R Gond, A Rawat, M Baghoria, B Prakash, B Rawat
2023 IEEE Applied Sensing Conference (APSCON), 1-3, 2023
2023
Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing
K Varshney, MS Yadav, DM Das, B Rawat
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-6, 2022
2022
Performance of Two-Dimensional MoS2 Field-Effect Transistor in the Presence of Oxide-Channel Imperfection
A Rawat, A Goel, B Rawat
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
2022
Layer by layer Self-assembled MoS2-ZnO Heterostructure for Near Room Temperature NO2 Gas Sensor
R Gond, P Shukla, M Baghoria, B Prakash, B Rawat
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
2022
Finding Analog/RF Performance of Inserted High-K FinFET for Sub-5 nm Technology Node
A Goel, A Rawat, B Rawat
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
2022
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