Debbie G. Senesky, Ph.D.
Debbie G. Senesky, Ph.D.
Associate Professor, Stanford University
Verified email at - Homepage
Cited by
Cited by
Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review
DG Senesky, B Jamshidi, KB Cheng, AP Pisano
IEEE Sensors Journal 9 (11), 1472-1478, 2009
A SiC MEMS resonant strain sensor for harsh environment applications
RG Azevedo, DG Jones, AV Jog, B Jamshidi, DR Myers, L Chen, X Fu, ...
IEEE Sensors Journal 7 (4), 568-576, 2007
Advances in silicon carbide science and technology at the micro-and nanoscales
R Maboudian, C Carraro, DG Senesky, CS Roper
Journal of Vacuum Science & Technology A 31 (5), 2013
AlN/3C–SiC composite plate enabling high‐frequency and high‐Q micromechanical resonators
CM Lin, YY Chen, VV Felmetsger, DG Senesky, AP Pisano
Advanced Materials 24 (20), 2722-2727, 2012
Solar-blind photodetectors for harsh electronics
DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ...
Scientific reports 3 (1), 2628, 2013
Temperature sensor based on 4H-silicon carbide pn diode operational from 20 C to 600 C
N Zhang, CM Lin, DG Senesky, AP Pisano
Applied Physics Letters 104 (7), 2014
High-Q aluminum nitride Lamb wave resonators with biconvex edges
CM Lin, YJ Lai, JC Hsu, YY Chen, DG Senesky, AP Pisano
Applied Physics Letters 99 (14), 2011
AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices
CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano
Applied Physics Letters 97 (14), 2010
4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450
WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano
IEEE Electron Device Letters 33 (11), 1586-1588, 2012
Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures
CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ...
Journal of Micromechanics and Microengineering 23 (2), 025019, 2013
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating
M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky
IEEE Electron Device Letters 38 (1), 56-59, 2016
New developments in sensing technology for structural health monitoring
SC Mukhopadhyay
Springer Science & Business Media, 2011
High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers
PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ...
ACS Photonics 5 (11), 4277-4282, 2018
Anchor loss reduction in AlN Lamb wave resonators using phononic crystal strip tethers
CM Lin, JC Hsu, DG Senesky, AP Pisano
2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014
Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures
TK Nguyen, HP Phan, T Dinh, KM Dowling, ARM Foisal, DG Senesky, ...
Materials & Design 156, 441-445, 2018
Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching
KM Dowling, EH Ransom, DG Senesky
Journal of Microelectromechanical Systems 26 (1), 135-142, 2016
Continuous V-grooved AlGaN/GaN surfaces for high-temperature ultraviolet photodetectors
H So, J Lim, DG Senesky
IEEE Sensors Journal 16 (10), 3633-3639, 2016
Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring
TA Pham, A Qamar, T Dinh, MK Masud, M Rais‐Zadeh, DG Senesky, ...
Advanced Science 7 (21), 2001294, 2020
Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure
HP Phan, KM Dowling, TK Nguyen, T Dinh, DG Senesky, T Namazu, ...
Materials & Design 156, 16-21, 2018
Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments
DR Myers, KB Cheng, B Jamshidi, RG Azevedo, DG Senesky, L Chen, ...
Journal of Micro/Nanolithography, MEMS and MOEMS 8 (2), 021116-021116-7, 2009
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