| Electrical observations of filamentary conductions for the resistive memory switching in NiO films DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, ... Applied physics letters 88 (20), 2006 | 670 | 2006 |
| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 512 | 2007 |
| Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ... Nano letters 9 (4), 1476-1481, 2009 | 489 | 2009 |
| Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, ... Nature materials 11 (4), 301-305, 2012 | 478 | 2012 |
| Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application IG Baek, DC Kim, MJ Lee, HJ Kim, EK Yim, MS Lee, JE Lee, SE Ahn, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 374 | 2005 |
| Photoresponse of sol-gel-synthesized ZnO nanorods SE Ahn, JS Lee, H Kim, S Kim, BH Kang, KH Kim, GT Kim Applied Physics Letters 84 (24), 5022-5024, 2004 | 335 | 2004 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 288 | 2007 |
| Low‐temperature‐grown transition metal oxide based storage materials and oxide transistors for high‐density non‐volatile memory MJ Lee, SI Kim, CB Lee, H Yin, SE Ahn, BS Kang, KH Kim, JC Park, ... Advanced Functional Materials 19 (10), 1587-1593, 2009 | 282 | 2009 |
| 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ... 2007 IEEE International Electron Devices Meeting, 771-774, 2007 | 277 | 2007 |
| Improvement of resistive memory switching in NiO using IrO2 DC Kim, MJ Lee, SE Ahn, S Seo, JC Park, IK Yoo, IG Baek, HJ Kim, ... Applied physics letters 88 (23), 2006 | 247 | 2006 |
| Effects of metal electrodes on the resistive memory switching property of NiO thin films CB Lee, BS Kang, A Benayad, MJ Lee, SE Ahn, KH Kim, G Stefanovich, ... Applied Physics Letters 93 (4), 2008 | 229 | 2008 |
| Origin of the slow photoresponse in an individual sol-gel synthesized ZnO nanowire SE Ahn, HJ Ji, K Kim, GT Kim, CH Bae, SM Park, YK Kim, JS Ha Applied Physics Letters 90 (15), 2007 | 200 | 2007 |
| Write current reduction in transition metal oxide based resistance-change memory SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ... Advanced materials 20 (5), 924-928, 2008 | 193 | 2008 |
| Metal oxide thin film phototransistor for remote touch interactive displays SE Ahn, I Song, S Jeon, YW Jeon, Y Kim, C Kim, B Ryu, JH Lee, A Nathan, ... Advanced materials 24 (19), 2631-2636, 2012 | 166 | 2012 |
| Electrode dependence of resistance switching in polycrystalline NiO films S Seo, MJ Lee, DC Kim, SE Ahn, BH Park, YS Kim, IK Yoo, IS Byun, ... Applied Physics Letters 87 (26), 2005 | 156 | 2005 |
| High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications BS Kang, SE Ahn, MJ Lee, G Stefanovich, KH Kim, WX Xianyu, CB Lee, ... Adv. Mater 20 (16), 3066-3069, 2008 | 145 | 2008 |
| Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates MJ Lee, CB Lee, S Kim, H Yin, J Park, SE Ahn, BS Kang, KH Kim, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 125 | 2008 |
| 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, ... 2010 International Electron Devices Meeting, 21.3. 1-21.3. 4, 2010 | 116 | 2010 |
| Random and localized resistive switching observation in Pt/NiO/Pt JB Yun, S Kim, S Seo, MJ Lee, DC Kim, SE Ahn, Y Park, J Kim, H Shin physica status solidi (RRL)–Rapid Research Letters 1 (6), 280-282, 2007 | 102 | 2007 |
| Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same SE Ahn, I Yoo, YS Joung, YK Cha, MJ Lee, D Seo, SA Seo US Patent 7,602,042, 2009 | 97 | 2009 |
Myoung-Jae LeeDaegu Gyeongubuk Institute of Science & Technology (DGIST)Verified email at dgist.ac.kr
