| Robustness of RF MEMS capacitive switches with molybdenum membranes C Palego, J Deng, Z Peng, S Halder, JCM Hwang, DI Forehand, ... IEEE Transactions on Microwave Theory and Techniques 57 (12), 3262-3269, 2009 | 67 | 2009 |
| Temperature-dependent RF large-signal model of GaN-based MOSHFETs J Deng, W Wang, S Halder, WR Curtice, JCM Hwang, V Adivarahan, ... IEEE transactions on microwave theory and techniques 56 (12), 2709-2716, 2008 | 36 | 2008 |
| Advanced modeling and optimization of high performance 32nm HKMG SOI CMOS for RF/analog SoC applications S Lee, J Johnson, B Greene, A Chou, K Zhao, M Chowdhury, J Sim, ... 2012 Symposium on VLSI Technology (VLSIT), 135-136, 2012 | 20 | 2012 |
| Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs N Pala, X Hu, J Deng, J Yang, R Gaska, Z Yang, A Koudymov, MS Shur, ... Solid-state electronics 52 (8), 1217-1220, 2008 | 19 | 2008 |
| Charge-pumping characterization of interface traps in Al2O3/In0. 75Ga0. 25As metal-oxide-semiconductor field-effect transistors W Wang, J Deng, JCM Hwang, Y Xuan, Y Wu, PD Ye Applied Physics Letters 96 (7), 2010 | 15 | 2010 |
| SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing J Deng, A Rahman, R Thoma, PW Schneider, J Johnson, H Trombley, ... IEEE Trans. Electron Device 62 (6), 1760 - 1768, 2015 | 8 | 2015 |
| Al nanogrid electrode for ultraviolet detectors G Ding, J Deng, L Zhou, Q Gan, JCM Hwang, V Dierolf, FJ Bartoli, ... Optics Letters 36 (18), 3663-3665, 2011 | 8 | 2011 |
| Polarization-Insensitive Metal–Semiconductor–Metal Nanoplasmonic Structures for Ultrafast Ultraviolet Detectors SJ Haifeng Hu, Xie Zeng, Chong Tong, Wayne A Plasmonics, 2012 | 6* | 2012 |
| RF large-signal model for SiO2/AlGaN/GaN MOSHFETs J Deng, W Wang, S Halder, WR Curtice, JCM Hwang, V Adivarahan, ... 2008 IEEE MTT-S International Microwave Symposium Digest, 1417-1420, 2008 | 6 | 2008 |
| E-beam assisted fabrication of a subwavelength aluminum mesh C Mazuir, JT Deng, JCM Hwang, WV Schoenfeld Proceedings of SPIE 7205, 72050R, 2009 | 3 | 2009 |
| Insulated gate III-N devices and ICs G Simin, V Adivarahan, H Fatima, S Saygi, A Koudymov, X He, W Shuai, ... International Semiconductor Device Research Symposium, 2003, 398-399, 2003 | 3 | 2003 |
| Pulse RF operation of MEMS capacitive switches C Palego, J Deng, S Halder, Z Peng, JCM Hwang, DI Forehand, ... 2009 European Microwave Integrated Circuits Conference (EuMIC), 395-398, 2009 | 1 | 2009 |
| Modeling and characterization of GaN p-i-n photodiodes J Deng, S Halder, JCM Hwang, B Hertog, J Xie, A Dabiran, A Osinsky Infrared and Photoelectronic Imagers and Detector Devices II 6294, 186-193, 2006 | 1 | 2006 |
| Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications AK Sood, R Singh, YR Puri, FW Clarke, O Laboutin, PM Deluca, ... Gallium Nitride Materials and Devices 6121, 107-119, 2006 | 1 | 2006 |
| Design and Development of MBE Grown AlGaN/GaN HEMT Devices on SiC Substrates for RF Applications AK Sood, R Singh, YR Puri, FW Clarke, A Dabiran, P Chow, J Deng, ... MRS Online Proceedings Library (OPL) 892, 0892-FF13-12, 2005 | 1 | 2005 |
| AWARENESS, KNOWLEDGE AND BEHAVIOR OF USING FOLIC ACID SUPPLEMENTATION TO PREVENT NTDS AMONG RURAL WOMEN IN CENTRAL SOUTH CHINA Q Lin, F Li, XY Hu, J Deng, JC Shi, WJ Gong ANNALS OF NUTRITION AND METABOLISM 63, 461-461, 2013 | | 2013 |
| Modeling and characterization of gallium nitride based metal-oxide-semiconductor heterostructure field-effect transistors for RF power amplifiers J Deng Lehigh University, 2009 | | 2009 |
| Modeling and characterization of threshold shift and capacitance peaking in AlGaN/GaN MOSHFETs J Deng, JCM Hwang 2009 IEEE 10th Annual Wireless and Microwave Technology Conference, 1-4, 2009 | | 2009 |
| Polarization-Independent Surface-Plasmon-Enhanced High-Speed Ultraviolet p+-AlGaN/i-GaN/n+-GaN Photodetectors WVS Jie DENG, Qiaoqiang GAN, Liangcheng ZHOU, Volkmar International Conference on Materials for Advanced Technologies 2009, 2009 | | 2009 |
| Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications AK Sood, YR Puri, FW Clarke, J Deng, JCM Hwang, SK Brierley, MA Khan, ... Gallium Nitride Materials and Devices II 6473, 342-353, 2007 | | 2007 |
Cristiano PalegoBangor UniversityVerified email at bangor.ac.uk
