Yang Lv
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Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe (1–x) films
M Dc, R Grassi, JY Chen, M Jamali, D Reifsnyder Hickey, D Zhang, ...
Nature materials 17 (9), 800-807, 2018
Giant Spin Pumping and Inverse Spin Hall Effect in the Presence of Surface and Bulk Spin−Orbit Coupling of Topological Insulator Bi2Se3
M Jamali, JS Lee, JS Jeong, F Mahfouzi, Y Lv, Z Zhao, BK Nikolić, ...
Nano letters 15 (10), 7126-7132, 2015
A magnetic tunnel junction based true random number generator with conditional perturb and real-time output probability tracking
WH Choi*, Y Lv*(*co-first author), J Kim, A Deshpande, G Kang, JP Wang, ...
2014 IEEE International Electron Devices Meeting, 12.5. 1-12.5. 4, 2014
Unidirectional spin-Hall and Rashba− Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures
Y Lv, J Kally, D Zhang, JS Lee, M Jamali, N Samarth, JP Wang
Nature communications 9 (1), 111, 2018
Efficient in-memory processing using spintronics
Z Chowdhury, JD Harms, SK Khatamifard, M Zabihi, Y Lv, AP Lyle, ...
IEEE Computer Architecture Letters 17 (1), 42-46, 2017
A single magnetic-tunnel-junction stochastic computing unit
Y Lv, JP Wang
2017 IEEE International Electron Devices Meeting (IEDM), 36.2. 1-36.2. 4, 2017
Demonstration of Ru as the 4th ferromagnetic element at room temperature
P Quarterman, C Sun, J Garcia-Barriocanal, DC Mahendra, Y Lv, ...
Nature communications 9 (1), 2058, 2018
Experimental demonstration of probabilistic spin logic by magnetic tunnel junctions
Y Lv, RP Bloom, JP Wang
IEEE Magnetics Letters 10, 1-5, 2019
Telegraphic switching signals by magnet tunnel junctions for neural spiking signals with high information capacity
BR Zink, Y Lv, JP Wang
Journal of Applied Physics 124 (15), 152121, 2018
Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions
DL Zhang, C Sun, Y Lv, KB Schliep, Z Zhao, JY Chen, PM Voyles, ...
Physical Review Applied 9 (4), 044028, 2018
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling
D Zhang, M Bapna, W Jiang, D Sousa, YC Liao, Z Zhao, Y Lv, P Sahu, ...
Nano letters 22 (2), 622-629, 2022
Spin analog-to-digital convertor using magnetic tunnel junction and spin Hall effect
Y Jiang, Y Lv, M Jamali, JP Wang
IEEE Electron Device Letters 36 (5), 511-513, 2015
Spin-based logic device
JP Wang, Y Lv, Y Jiang, M Jamali
US Patent 9,240,799, 2016
Two-terminal spintronic devices
JP Wang, Y Lv, M Jamali
US Patent 10,283,561, 2019
Large unidirectional spin Hall and Rashba− Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
Y Lv, J Kally, T Liu, P Quarterman, T Pillsbury, BJ Kirby, AJ Grutter, ...
Applied Physics Reviews 9 (1), 011406, 2022
Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions
DL Zhang, KB Schliep, RJ Wu, P Quarterman, D Reifsnyder Hickey, Y Lv, ...
Applied Physics Letters 112 (15), 152401, 2018
Independent Control of Antiparallel-and Parallel-State Thermal Stability Factors in Magnetic Tunnel Junctions for Telegraphic Signals With Two Degrees of Tunability
BR Zink, Y Lv, JP Wang
IEEE Transactions on Electron Devices 66 (12), 5353-5359, 2019
An 8-bit analog-to-digital converter based on the voltage-dependent switching probability of a magnetic tunnel junction
WH Choi, Y Lv, H Kim, JP Wang, CH Kim
2015 Symposium on VLSI Technology (VLSI Technology), T162-T163, 2015
Review of Magnetic Tunnel Junctions for Stochastic Computing
BR Zink, Y Lv, JP Wang
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022
Sputtering of cobalt film with perpendicular magnetic anisotropy on disorder-free graphene
M Jamali, Y Lv, Z Zhao, JP Wang
AIP Advances 4 (10), 107102, 2014
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