| Recent progress in phase-change memory technology GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ... IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016 | 403 | 2016 |
| Crystallization times of Ge–Te phase change materials as a function of composition S Raoux, HY Cheng, MA Caldwell, HSP Wong Applied physics letters 95 (7), 2009 | 166 | 2009 |
| A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material HY Cheng, TH Hsu, S Raoux, JY Wu, PY Du, M Breitwisch, Y Zhu, EK Lai, ... 2011 International Electron Devices Meeting, 3.4. 1-3.4. 4, 2011 | 101 | 2011 |
| Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction S Raoux, B Muñoz, HY Cheng, JL Jordan-Sweet Applied Physics Letters 95 (14), 2009 | 92 | 2009 |
| 3D cross-point phase-change memory for storage-class memory HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky Journal of Physics D: Applied Physics 52 (47), 473002, 2019 | 88 | 2019 |
| Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells HY Cheng, CA Jong, RJ Chung, TS Chin, RT Huang Semiconductor science and technology 20 (11), 1111, 2005 | 87 | 2005 |
| ALD-based confined PCM with a metallic liner toward unlimited endurance W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016 | 83 | 2016 |
| Influence of interfaces and doping on the crystallization temperature of Ge–Sb S Raoux, HY Cheng, JL Jordan-Sweet, B Munoz, M Hitzbleck Applied Physics Letters 94 (18), 2009 | 78 | 2009 |
| The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5 HY Cheng, S Raoux, YC Chen Journal of applied physics 107 (7), 2010 | 70 | 2010 |
| A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ... 2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012 | 64 | 2012 |
| The crystallization behavior of stoichiometric and off-stoichiometric Ga–Sb–Te materials for phase-change memory HY Cheng, S Raoux, JL Jordan-Sweet Applied Physics Letters 98 (12), 2011 | 58 | 2011 |
| A low power phase change memory using thermally confined TaN/TiN bottom electrode JY Wu, M Breitwisch, S Kim, TH Hsu, R Cheek, PY Du, J Li, EK Lai, Y Zhu, ... 2011 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2011 | 57 | 2011 |
| Phase transitions in Ga–Sb phase change alloys S Raoux, AK König, HY Cheng, D Garbin, RW Cheek, JL Jordan‐Sweet, ... physica status solidi (b) 249 (10), 1999-2004, 2012 | 56 | 2012 |
| An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017 | 53 | 2017 |
| Characteristics of Ga–Sb–Te films for phase-change memory HY Cheng, KF Kao, CM Lee, TS Chin IEEE transactions on magnetics 43 (2), 927-929, 2007 | 53 | 2007 |
| Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ... 2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015 | 50 | 2015 |
| Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018 | 48 | 2018 |
| Phase change memory having one or more non-constant doping profiles YH Shih, HY Cheng, CF Chen, CI Wu, MH Lee, HL Lung, MJ Breitwisch, ... US Patent 8,363,463, 2013 | 44 | 2013 |
| Crystallization kinetics of Ga–Sb–Te films for phase change memory HY Cheng, KF Kao, CM Lee, TS Chin Thin Solid Films 516 (16), 5513-5517, 2008 | 43 | 2008 |
| Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application HY Cheng, M BrightSky, S Raoux, CF Chen, PY Du, JY Wu, YY Lin, ... 2013 IEEE international electron devices meeting, 30.6. 1-30.6. 4, 2013 | 42 | 2013 |
