Huai-Yu Cheng
Huai-Yu Cheng
Senior Researcher, IBM/Macronix PCRAM Joint Project, Macronix international Co., Ltd.
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Recent progress in phase-change memory technology
GW Burr, MJ Brightsky, A Sebastian, HY Cheng, JY Wu, S Kim, NE Sosa, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
Crystallization times of Ge–Te phase change materials as a function of composition
S Raoux, HY Cheng, MA Caldwell, HSP Wong
Applied physics letters 95 (7), 2009
A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material
HY Cheng, TH Hsu, S Raoux, JY Wu, PY Du, M Breitwisch, Y Zhu, EK Lai, ...
2011 International Electron Devices Meeting, 3.4. 1-3.4. 4, 2011
Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction
S Raoux, B Muńoz, HY Cheng, JL Jordan-Sweet
Applied Physics Letters 95 (14), 2009
Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells
HY Cheng, CA Jong, RJ Chung, TS Chin, RT Huang
Semiconductor science and technology 20 (11), 1111, 2005
ALD-based confined PCM with a metallic liner toward unlimited endurance
W Kim, M BrightSky, T Masuda, N Sosa, S Kim, R Bruce, F Carta, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2016
3D cross-point phase-change memory for storage-class memory
HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky
Journal of Physics D: Applied Physics 52 (47), 473002, 2019
Influence of interfaces and doping on the crystallization temperature of Ge–Sb
S Raoux, HY Cheng, JL Jordan-Sweet, B Munoz, M Hitzbleck
Applied Physics Letters 94 (18), 2009
The impact of film thickness and melt-quenched phase on the phase transition characteristics of Ge2Sb2Te5
HY Cheng, S Raoux, YC Chen
Journal of applied physics 107 (7), 2010
A thermally robust phase change memory by engineering the Ge/N concentration in (Ge, N)xSbyTezphase change material
HY Cheng, JY Wu, R Cheek, S Raoux, M BrightSky, D Garbin, S Kim, ...
2012 International Electron Devices Meeting, 31.1. 1-31.1. 4, 2012
A low power phase change memory using thermally confined TaN/TiN bottom electrode
JY Wu, M Breitwisch, S Kim, TH Hsu, R Cheek, PY Du, J Li, EK Lai, Y Zhu, ...
2011 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2011
The crystallization behavior of stoichiometric and off-stoichiometric Ga–Sb–Te materials for phase-change memory
HY Cheng, S Raoux, JL Jordan-Sweet
Applied Physics Letters 98 (12), 2011
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017
Phase transitions in Ga–Sb phase change alloys
S Raoux, AK König, HY Cheng, D Garbin, RW Cheek, JL Jordan‐Sweet, ...
physica status solidi (b) 249 (10), 1999-2004, 2012
Characteristics of Ga–Sb–Te films for phase-change memory
HY Cheng, KF Kao, CM Lee, TS Chin
IEEE transactions on magnetics 43 (2), 927-929, 2007
Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory
HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ...
2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ...
2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015
Understanding amorphous states of phase-change memory using Frenkel-Poole model
YH Shih, MH Lee, M Breitwisch, R Cheek, JY Wu, B Rajendran, Y Zhu, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Phase change memory having one or more non-constant doping profiles
YH Shih, HY Cheng, CF Chen, CI Wu, MH Lee, HL Lung, MJ Breitwisch, ...
US Patent 8,363,463, 2013
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
HY Cheng, M BrightSky, S Raoux, CF Chen, PY Du, JY Wu, YY Lin, ...
2013 IEEE international electron devices meeting, 30.6. 1-30.6. 4, 2013
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