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Yoshiaki Nakano
Yoshiaki Nakano
Verified email at ee.t.u-tokyo.ac.jp - Homepage
Title
Cited by
Cited by
Year
All-optical flip-flop multimode interference bistable laser diode
M Takenaka, M Raburn, Y Nakano
IEEE Photonics Technology Letters 17 (5), 968-970, 2005
164*2005
Effect of CO2 Bubbling into Aqueous Solutions Used for Electrochemical Reduction of CO2 for Energy Conversion and Storage
H Zhong, K Fujii, Y Nakano, F Jin
The Journal of Physical Chemistry C 119 (1), 55-61, 2015
1632015
Facet reflection independent, single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser equipped with a gain‐coupling mechanism
Y Nakano, Y Luo, K Tada
Applied physics letters 55 (16), 1606-1608, 1989
1611989
Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift
H Yokoi, T Mizumoto, N Shinjo, N Futakuchi, Y Nakano
Applied optics 39 (33), 6158-6164, 2000
1552000
Purely gain‐coupled distributed feedback semiconductor lasers
Y Luo, Y Nakano, K Tada, T Inoue, H Hosomatsu, H Iwaoka
Applied physics letters 56 (17), 1620-1622, 1990
1361990
Fabrication and characterization of an InGaAsP/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation
H Shimizu, Y Nakano
Journal of lightwave technology 24 (1), 38, 2006
1342006
Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping
M Takenaka, K Morii, M Sugiyama, Y Nakano, S Takagi
Optics Express 20 (8), 8718-8725, 2012
1112012
Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition
SW Lim, Y Shimogaki, Y Nakano, K Tada, HKH Komiyama
Japanese journal of applied physics 35 (2S), 1468, 1996
1101996
100‐period, 1.23‐eV bandgap InGaAs/GaAsP quantum wells for high‐efficiency GaAs solar cells: toward current‐matched Ge‐based tandem cells
H Fujii, K Toprasertpong, Y Wang, K Watanabe, M Sugiyama, Y Nakano
Progress in Photovoltaics: Research and Applications 22 (7), 784-795, 2014
1092014
Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell
K Fujii, S Nakamura, M Sugiyama, K Watanabe, B Bagheri, Y Nakano
International journal of hydrogen energy 38 (34), 14424-14432, 2013
1062013
Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential
H Feng, JP Pang, M Sugiyama, K Tada, Y Nakano
IEEE journal of quantum electronics 34 (7), 1197-1208, 1998
1001998
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier …
M Yokoyama, T Yasuda, H Takagi, N Miyata, Y Urabe, H Ishii, H Yamada, ...
Applied Physics Letters 96 (14), 2010
842010
Reduction of excess intensity noise induced by external reflection in a gain-coupled distributed feedback semiconductor laser
Y Nakano, Y Deguchi, K Ikeda, Y Luo, K Tada
IEEE journal of quantum electronics 27 (6), 1732-1735, 1991
821991
Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer
Y Luo, Y Nakano, K Tada, T Inoue, H Hosomatsu, H Iwaoka
IEEE journal of quantum electronics 27 (6), 1724-1731, 1991
811991
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells
K Toprasertpong, H Fujii, T Thomas, M Führer, D Alonso‐Įlvarez, ...
Progress in Photovoltaics: research and applications 24 (4), 533-542, 2016
802016
Propagation loss measurement for surface plasmon-polariton modes at metal waveguides on semiconductor substrates
T Goto, Y Katagiri, H Fukuda, H Shinojima, Y Nakano, I Kobayashi, ...
Applied physics letters 84 (6), 852-854, 2004
782004
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Buried Oxide Layers
M Yokoyama, R Iida, S Kim, N Taoka, Y Urabe, H Takagi, T Yasuda, ...
IEEE electron device letters 32 (9), 1218-1220, 2011
742011
Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth
H Oh, M Sugiyama, Y Shimogaki
Japanese journal of applied physics 42 (10R), 6284, 2003
732003
From sewing thread to sensor: Nylon® fiber strain and pressure sensors
YA Samad, K Komatsu, D Yamashita, Y Li, L Zheng, SM Alhassan, ...
Sensors and Actuators B: Chemical 240, 1083-1090, 2017
692017
InP photonic wire waveguide using InAlAs oxide cladding layer
M Takenaka, Y Nakano
Optics Express 15 (13), 8422-8427, 2007
652007
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