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Yuan-Chieh Tseng
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A facile green antisolvent approach to Cu 2+-doped ZnO nanocrystals with visible-light-responsive photoactivities
YH Lu, WH Lin, CY Yang, YH Chiu, YC Pu, MH Lee, YC Tseng, YJ Hsu
Nanoscale 6 (15), 8796-8803, 2014
1542014
Nonzero orbital moment in high coercivity and low-temperature collapse of the magnetocrystalline anisotropy
YC Tseng, NM Souza-Neto, D Haskel, M Gich, C Frontera, A Roig, ...
Physical Review B 79 (9), 094404, 2009
1362009
Novel pressure-induced magnetic transition in magnetite (Fe 3 O 4)
Y Ding, D Haskel, SG Ovchinnikov, YC Tseng, YS Orlov, JC Lang, H Mao
Physical Review Letters 100 (4), 045508, 2008
1002008
Pressure-induced magnetic transition in manganite (La {sub 0.75} Ca {sub 0.25} MnO {sub 3}).
Y Ding, D Haskel, YC Tseng, E Kaneshita, M van Veenendaal, J Mitchell, ...
Phys. Rev. Lett. 102 (ANL/MSD/JA-62430), 2009
822009
Pressure-Induced Magnetic Transition in Manganite ()
Y Ding, D Haskel, YC Tseng, E Kaneshita, M Van Veenendaal, JF Mitchell, ...
Physical review letters 102 (23), 237201, 2009
772009
Pressure-Induced Electronic Mixing and Enhancement of Ferromagnetic Ordering in Eu (, Se, S, O) Magnetic Semiconductors
NM Souza-Neto, D Haskel, YC Tseng, G Lapertot
Physical review letters 102 (5), 057206, 2009
672009
Direct probe of heterojunction effects upon photoconductive properties of TiO2 nanotubes fabricated by atomic layer deposition
YH Chang, CM Liu, YC Tseng, C Chen, CC Chen, HE Cheng
Nanotechnology 21 (22), 225602, 2010
612010
Instrument for x-ray magnetic circular dichroism measurements at high pressures
D Haskel, YC Tseng, JC Lang, S Sinogeikin
Review of Scientific Instruments 78 (8), 2007
512007
Low cost facile synthesis of large-area cobalt hydroxide nanorods with remarkable pseudocapacitance
MJ Deng, CZ Song, CC Wang, YC Tseng, JM Chen, KT Lu
ACS Applied Materials & Interfaces 7 (17), 9147-9156, 2015
422015
Soft and hard natures of Nd2Fe14B permanent magnet explored by first-order-reversal-curves
PA Chen, CY Yang, SJ Chang, MH Lee, NK Tang, SC Yen, YC Tseng
Journal of magnetism and magnetic materials 370, 45-53, 2014
342014
Method of forming a low voltage drive ferroelectric capacitor
YC Tseng, CH Wang, TB Wu
US Patent 7,071,007, 2006
332006
Role of electrode-induced oxygen vacancies in regulating polarization wake-up in ferroelectric capacitors
YJ Lin, CY Teng, SJ Chang, YF Liao, C Hu, CJ Su, YC Tseng
Applied Surface Science 528, 147014, 2020
282020
Phase-driven magneto-electrical characteristics of single-layer MoS 2
CY Yang, KC Chiu, SJ Chang, XQ Zhang, JY Liang, CS Chung, H Pan, ...
Nanoscale 8 (10), 5627-5633, 2016
282016
Superparamagnetic and ferromagnetic Ni nanorod arrays fabricated on Si substrates using electroless deposition
CM Liu, YC Tseng, C Chen, MC Hsu, TY Chao, YT Cheng
Nanotechnology 20 (41), 415703, 2009
282009
GdFe0.8Ni0.2O3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity
SJ Chang, MH Chung, MY Kao, SF Lee, YH Yu, CC Kaun, T Nakamura, ...
ACS applied materials & interfaces 11 (34), 31562-31572, 2019
272019
Competing anisotropy-tunneling correlation of the CoFeB/MgO perpendicular magnetic tunnel junction: An electronic approach
CY Yang, SJ Chang, MH Lee, KH Shen, SY Yang, HJ Lin, YC Tseng
Scientific reports 5 (1), 17169, 2015
212015
Surface modification of commercial PtRu nanoparticles for methanol electro-oxidation
CW Kuo, IT Lu, LC Chang, YC Hsieh, YC Tseng, PW Wu, JF Lee
Journal of power sources 240, 122-130, 2013
212013
Magnetic spectroscopy at high pressures using X-ray magnetic circular dichroism
D Haskel, YC Tseng, NM Souza-Neto, JC Lang, S Sinogeikin, Y Mudryk, ...
High Pressure Research 28 (3), 185-192, 2008
202008
Effect of hydrostatic pressure upon the magnetic transitions in the giant magnetocaloric compounds: X-ray magnetic circular dichroism study
YC Tseng, D Haskel, JC Lang, S Sinogeikin, Y Mudryk, VK Pecharsky, ...
Physical Review B 76 (1), 014411, 2007
202007
High-aspect ratio through silicon via (TSV) technology
HB Chang, HY Chen, PC Kuo, CH Chien, EB Liao, TC Lin, TS Wei, YC Lin, ...
2012 Symposium on VLSI Technology (VLSIT), 173-174, 2012
192012
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