H 2 O 2: HF: C 4 O 6 H 6 (tartaric acid): H 2 O etching system for chemical polishing of GaSb IE Berishev, F De Anda, VA Mishournyi, J Olvera, ND Ilyinskaya, ... Journal of the Electrochemical Society 142 (10), L189, 1995 | 28 | 1995 |
InGaAsSb growth from Sb-rich solutions VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, NN Faleev Journal of crystal growth 180 (1), 34-39, 1997 | 19 | 1997 |
Photoluminescence of epitaxial GaAs grown by close space vapor transport method JM Arroyo, L Kratena, F Chavez, F De Anda Solid state communications 49 (10), 939-942, 1984 | 16 | 1984 |
Structural, optical and electrical characterizations of midwave infrared Ga-free type-II InAs/InAsSb superlattice barrier photodetector U Zavala-Moran, M Bouschet, JP Perez, R Alchaar, S Bernhardt, ... Photonics 7 (3), 76, 2020 | 14 | 2020 |
High purity GaSb grown by LPE in a sapphire boat J Olvera-Hernandez, F De Anda, H Navarro-Contreras, VA Mishurnyi Journal of crystal growth 208 (1-4), 27-32, 2000 | 13 | 2000 |
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil’ev Journal of electronic materials 28, 959-962, 1999 | 10 | 1999 |
Growth of low-etch-pit density InSb single crystals by the Czochralski method JA Godines, R Castillo, J Martinez, ME Navarro, F De Anda, A Canales, ... Journal of crystal growth 178 (3), 422-425, 1997 | 10 | 1997 |
Probing the predictions of an orbifold theory of flavor FJ de Anda, N Nath, JWF Valle, CA Vaquera-Araujo Physical Review D 101 (11), 116012, 2020 | 9 | 2020 |
Growth of quantum-well heterostructures by liquid phase epitaxy VA Mishurnyi, F de Anda, VA Elyukhin, IC Hernandez Critical reviews in solid state and materials sciences 31 (1-2), 1-13, 2006 | 9 | 2006 |
Investigation of the “composition-pulling or lattice-latching” effect in LPE MP Rodríguez-Torres, AY Gorbatchev, VA Mishurnyi, F De Anda, ... Journal of crystal growth 277 (1-4), 138-142, 2005 | 9 | 2005 |
Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE VA Mishurnyi, F De Anda, ICH del Castillo, AY Gorbatchev Thin Solid Films 340 (1-2), 24-27, 1999 | 9 | 1999 |
Diffusion du zinc dans GaAlSb et application à la photodétection infrarouge A Joullie, F De Anda, P Salsac, M Mebarki Revue de physique appliquée 19 (3), 223-230, 1984 | 9 | 1984 |
Structural and optical properties of gadolinium doped ZnTe thin films JD Lopez, L Tirado-Mejia, H Ariza-Calderon, H Riascos, F de Anda, ... Materials Letters 268, 127562, 2020 | 8 | 2020 |
Carrier concentration control of GaSb/GaInAsSb system JL Lazzari, F De Anda, J Nieto, H Aït‐Kaci, M Mebarki, F Chevrier, ... AIP Conference Proceedings 890 (1), 115-126, 2007 | 8 | 2007 |
Influence of pixel etching on electrical and electro-optical performances of a ga-free inas/inassb t2sl barrier photodetector for mid-wave infrared imaging M Bouschet, U Zavala-Moran, V Arounassalame, R Alchaar, C Bataillon, ... Photonics 8 (6), 194, 2021 | 7 | 2021 |
AlGaAsSb and AlGaInAsSb Growth from Sb‐rich Solutions VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, VM Smirnov, ... Crystal Research and Technology: Journal of Experimental and Industrial …, 1998 | 7 | 1998 |
A survey of new laser and detector structures for 3-5 µm midinfrared spectral range AF Joullie, P Christol, JB Rodriguez, H Ait-Kaci, F Chevrier, J Nieto, ... Advanced Optoelectronics and lasers 5582, 211-221, 2004 | 6 | 2004 |
Influence of substrate conductivity on layer thickness in LPE GaAs J Olvera-Hernández, P De Jesús, F De Anda, M Rojas-Lopez Journal of crystal growth 268 (3-4), 375-377, 2004 | 6 | 2004 |
Investigation of the phase diagram of the Pb–Ga–Sb system R Hernández-Zarazúa, M Hernández-Sustaita, F De Anda, VA Mishurnyi, ... Thin solid films 461 (2), 233-236, 2004 | 5 | 2004 |
J. of the Electrochem IE Berishev, F De Anda, VA Mishournyi, J Olvera, ND Ilyinskaya, ... Soc 142, L189, 1995 | 5 | 1995 |