Francisco de Anda
Francisco de Anda
Profesor en UASLP
Verified email at
Cited by
Cited by
H 2 O 2: HF: C 4 O 6 H 6 (tartaric acid): H 2 O etching system for chemical polishing of GaSb
IE Berishev, F De Anda, VA Mishournyi, J Olvera, ND Ilyinskaya, ...
Journal of the Electrochemical Society 142 (10), L189, 1995
InGaAsSb growth from Sb-rich solutions
VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, NN Faleev
Journal of crystal growth 180 (1), 34-39, 1997
Photoluminescence of epitaxial GaAs grown by close space vapor transport method
JM Arroyo, L Kratena, F Chavez, F De Anda
Solid state communications 49 (10), 939-942, 1984
Structural, optical and electrical characterizations of midwave infrared Ga-free type-II InAs/InAsSb superlattice barrier photodetector
U Zavala-Moran, M Bouschet, JP Perez, R Alchaar, S Bernhardt, ...
Photonics 7 (3), 76, 2020
High purity GaSb grown by LPE in a sapphire boat
J Olvera-Hernandez, F De Anda, H Navarro-Contreras, VA Mishurnyi
Journal of crystal growth 208 (1-4), 27-32, 2000
Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil’ev
Journal of electronic materials 28, 959-962, 1999
Growth of low-etch-pit density InSb single crystals by the Czochralski method
JA Godines, R Castillo, J Martinez, ME Navarro, F De Anda, A Canales, ...
Journal of crystal growth 178 (3), 422-425, 1997
Probing the predictions of an orbifold theory of flavor
FJ de Anda, N Nath, JWF Valle, CA Vaquera-Araujo
Physical Review D 101 (11), 116012, 2020
Growth of quantum-well heterostructures by liquid phase epitaxy
VA Mishurnyi, F de Anda, VA Elyukhin, IC Hernandez
Critical reviews in solid state and materials sciences 31 (1-2), 1-13, 2006
Investigation of the “composition-pulling or lattice-latching” effect in LPE
MP Rodríguez-Torres, AY Gorbatchev, VA Mishurnyi, F De Anda, ...
Journal of crystal growth 277 (1-4), 138-142, 2005
Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE
VA Mishurnyi, F De Anda, ICH del Castillo, AY Gorbatchev
Thin Solid Films 340 (1-2), 24-27, 1999
Diffusion du zinc dans GaAlSb et application à la photodétection infrarouge
A Joullie, F De Anda, P Salsac, M Mebarki
Revue de physique appliquée 19 (3), 223-230, 1984
Structural and optical properties of gadolinium doped ZnTe thin films
JD Lopez, L Tirado-Mejia, H Ariza-Calderon, H Riascos, F de Anda, ...
Materials Letters 268, 127562, 2020
Carrier concentration control of GaSb/GaInAsSb system
JL Lazzari, F De Anda, J Nieto, H Aït‐Kaci, M Mebarki, F Chevrier, ...
AIP Conference Proceedings 890 (1), 115-126, 2007
Influence of pixel etching on electrical and electro-optical performances of a ga-free inas/inassb t2sl barrier photodetector for mid-wave infrared imaging
M Bouschet, U Zavala-Moran, V Arounassalame, R Alchaar, C Bataillon, ...
Photonics 8 (6), 194, 2021
AlGaAsSb and AlGaInAsSb Growth from Sb‐rich Solutions
VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, VM Smirnov, ...
Crystal Research and Technology: Journal of Experimental and Industrial …, 1998
A survey of new laser and detector structures for 3-5 µm midinfrared spectral range
AF Joullie, P Christol, JB Rodriguez, H Ait-Kaci, F Chevrier, J Nieto, ...
Advanced Optoelectronics and lasers 5582, 211-221, 2004
Influence of substrate conductivity on layer thickness in LPE GaAs
J Olvera-Hernández, P De Jesús, F De Anda, M Rojas-Lopez
Journal of crystal growth 268 (3-4), 375-377, 2004
Investigation of the phase diagram of the Pb–Ga–Sb system
R Hernández-Zarazúa, M Hernández-Sustaita, F De Anda, VA Mishurnyi, ...
Thin solid films 461 (2), 233-236, 2004
J. of the Electrochem
IE Berishev, F De Anda, VA Mishournyi, J Olvera, ND Ilyinskaya, ...
Soc 142, L189, 1995
The system can't perform the operation now. Try again later.
Articles 1–20