Feng-Chuan Chuang

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Chia-Hsiu HsuNanyang Technological UniversityVerified email at ntu.edu.sg
Arun BansilUniversity Distinguished Professor, Physics Department, Northeastern UniversityVerified email at northeastern.edu
Rovi Angelo Beloya VillaosDepartment of Physics, National Sun Yat-sen University, Kaohsiung 80424, TaiwanVerified email at g-mail.nsysu.edu.tw
Marvin A. AlbaoProfessor of Physics, University of the Philippines Los BañosVerified email at up.edu.ph
Gennevieve Macam (麥喈妮)National Institute of Physics, University of the Philippines DilimanVerified email at nip.upd.edu.ph
Christian Portales CrisostomoDepartment of Physical Sciences, University of the Philippines BaguioVerified email at up.edu.ph
Vidvuds OzolinsProfessor of Applied Physics, Yale UniversityVerified email at yale.edu
Liang-Ying FengNational Sun Yat-sen UniversityVerified email at g-mail.nsysu.edu.tw
Cristian V. CiobanuProfessor, Colorado School of MinesVerified email at mines.edu
Yu-Lun ChuehNational Tsing Huniversity, Materials Science and EngineeringVerified email at mx.nthu.edu.tw
Shin-Ming HuangNational Sun Yat-sen UniversityVerified email at mail.nsysu.edu.tw
Aniceto B. Maghirang IIIPh.D. Student, National Sun Yat-sen University, TaiwanVerified email at g-mail.nsysu.edu.tw
Wan-Sheng SuNational Taiwan Science Education CenterVerified email at mail.ntsec.gov.tw
Chien-Cheng KuoDepartment of Physics, National Sun Yat-sen UniversityVerified email at faculty.nsysu.edu.tw
Li HuangAssociate Professor of Physics, Southern University of Science and TechnologyVerified email at sustech.edu.cn
Jiong LuAssociate Professor, National University of SingaporeVerified email at nus.edu.sg
Tzu-Liang ChanHong Kong Baptist UniversityVerified email at hkbu.edu.hk
Arumugam ManikandanPostdoctoral Research Fellow, Department of Materials Science and Engineering, National Tsing HuaVerified email at mx.nthu.edu.tw
Henry MedinaIMECVerified email at imec.be
Jie SuNational University of SingaporeVerified email at nus.edu.sg

Feng-Chuan Chuang

National Sun Yat-sen University

Verified email at mail.nsysu.edu.tw - Homepage

2D materials Genetic Algorithm topological materials surface science atomic clusters


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Prediction of large-gap two-dimensional topological insulators consisting of bilayers of group III elements with Bi FC Chuang, LZ Yao, ZQ Huang, YT Liu, CH Hsu, T Das, H Lin, A Bansil Nano letters 14 (5), 2505-2508, 2014	182	2014
Structure of neutral aluminum clusters : Genetic algorithm tight-binding calculations FC Chuang, CZ Wang, KH Ho Physical Review B 73 (12), 125431, 2006	152	2006
Atomically precise bottom-up synthesis of π-extended [5] triangulene J Su, M Telychko, P Hu, G Macam, P Mutombo, H Zhang, Y Bao, F Cheng, ... Science advances 5 (7), eaav7717, 2019	131	2019
Thickness dependent electronic properties of Pt dichalcogenides RAB Villaos, CP Crisostomo, ZQ Huang, SM Huang, AAB Padama, ... npj 2D Materials and Applications 3 (1), 2, 2019	126	2019
Tunable topological electronic structures in Sb (111) bilayers: A first-principles study FC Chuang, CH Hsu, CY Chen, ZQ Huang, V Ozolins, H Lin, A Bansil Applied Physics Letters 102 (2), 022424, 2013	117	2013
The nontrivial electronic structure of Bi/Sb honeycombs on SiC (0001) CH Hsu, ZQ Huang, FC Chuang, CC Kuo, YT Liu, H Lin, A Bansil New Journal of Physics 17 (2), 025005, 2015	110	2015
Robust large gap two-dimensional topological insulators in hydrogenated III–V buckled honeycombs CP Crisostomo, LZ Yao, ZQ Huang, CH Hsu, FC Chuang, H Lin, ... Nano letters 15 (10), 6568-6574, 2015	106	2015
Nontrivial topological electronic structures in a single Bi (111) bilayer on different substrates: A first-principles study ZQ Huang, FC Chuang, CH Hsu, YT Liu, HR Chang, H Lin, A Bansil Physical Review B 88 (16), 165301, 2013	98	2013
Hybridizing plasmonic materials with 2D‐transition metal dichalcogenides toward functional applications P Sriram, A Manikandan, FC Chuang, YL Chueh Small 16 (15), 1904271, 2020	81	2020
Finding the reconstructions of semiconductor surfaces via a genetic algorithm FC Chuang, CV Ciobanu, VB Shenoy, CZ Wang, KM Ho Surface science 573 (2), L375-L381, 2004	77	2004
Phase‐Engineered PtSe₂‐Layered Films by a Plasma‐Assisted Selenization Process toward All PtSe₂‐Based Field Effect Transistor to Highly Sensitive, Flexible … TY Su, H Medina, YZ Chen, SW Wang, SS Lee, YC Shih, CW Chen, ... Small 14 (19), 1800032, 2018	72	2018
Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators BH Chou, ZQ Huang, CH Hsu, FC Chuang, YT Liu, H Lin, A Bansil New Journal of Physics 16 (11), 115008, 2014	72	2014
Magic Structures of H-Passivated〈 110∟ Silicon Nanowires TL Chan, CV Ciobanu, FC Chuang, N Lu, CZ Wang, KM Ho Nano letters 6 (2), 277-281, 2006	66	2006
Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures ZQ Huang, CH Hsu, FC Chuang, YT Liu, H Lin, WS Su, V Ozolins, ... New Journal of Physics 16 (10), 105018, 2014	65	2014
Direct evidence of interaction-induced Dirac cones in a monolayer silicene/Ag (111) system Y Feng, D Liu, B Feng, X Liu, L Zhao, Z Xie, Y Liu, A Liang, C Hu, Y Hu, ... Proceedings of the National Academy of Sciences 113 (51), 14656-14661, 2016	64	2016
Thermally strained band gap engineering of transition-metal dichalcogenide bilayers with enhanced light–matter interaction toward excellent photodetectors SW Wang, H Medina, KB Hong, CC Wu, Y Qu, A Manikandan, TY Su, ... ACS nano 11 (9), 8768-8776, 2017	62	2017
Melting of small Sn clusters by ab initio molecular dynamics simulations F Chuang, CZ Wang, S Öğüt, JR Chelikowsky, KM Ho Physical Review B 69 (16), 165408, 2004	60	2004
Geometries and stabilities of Ag-doped clusters: A first-principles study FC Chuang, YY Hsieh, CC Hsu, MA Albao The Journal of chemical physics 127 (14), 144313, 2007	59	2007
Predicted growth of two-dimensional topological insulator thin films of III-V compounds on Si (111) substrate LZ Yao, CP Crisostomo, CC Yeh, SM Lai, ZQ Huang, CH Hsu, FC Chuang, ... Scientific reports 5 (1), 15463, 2015	54	2015
Engineering surface structure of spinel oxides via high-valent vanadium doping for remarkably enhanced electrocatalytic oxygen evolution reaction R Wei, X Bu, W Gao, RAB Villaos, G Macam, ZQ Huang, C Lan, ... ACS applied materials & interfaces 11 (36), 33012-33021, 2019	50	2019

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