| Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ... Scientific Reports 10 (1), 1-8, 2020 | 21 | 2020 |
| Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate I Mahaboob, M Yakimov, K Hogan, E Rocco, S Tozier, ... IEEE Journal of the Electron Devices Society 7, 581-588, 2019 | 20 | 2019 |
| Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ... Journal of Electronic Materials, 1-9, 2020 | 5 | 2020 |
| Novel Gyrotron Beam Annealing Method for Mg-Implanted Bulk GaN K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 4 | 2019 |
| Magnesium implant-activation in GaN: Impact of high-temperature annealing techniques on the state of implant induced defects and Mg activation (Conference Presentation) K Hogan, S Tozier, M Graziano, M Derenge, M Shevelev, V Sklyar, ... Gallium Nitride Materials and Devices XIV 10918, 109180X, 2019 | 2 | 2019 |
| Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density (Conference Presentation) E Rocco, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, S Novak, ... Gallium Nitride Materials and Devices XIV 10918, 109180Y, 2019 | 1 | 2019 |
