| Resonant cavity-enhanced (RCE) photodetectors K Kishino, MS Unlu, JI Chyi, J Reed, L Arsenault, H Morkoc IEEE Journal of Quantum Electronics 27 (8), 2025-2034, 1991 | 458 | 1991 |
| Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities WH Chang, WY Chen, HS Chang, TP Hsieh, JI Chyi, TM Hsu Physical review letters 96 (11), 117401, 2006 | 341 | 2006 |
| Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng, CC Liao, CC Yang, CC Chou, ... Applied Physics Letters 77 (19), 2988-2990, 2000 | 297 | 2000 |
| Light emitting diode element and method for fabricating the same HC Lin, CM Lee, JI Chyi US Patent 8,101,447, 2012 | 215 | 2012 |
| AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy A Kikuchi, R Bannai, K Kishino, CM Lee, JI Chyi Applied physics letters 81 (9), 1729-1731, 2002 | 186 | 2002 |
| quantum-dot infrared photodetector with operating temperature up to 260 K L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones Applied physics letters 82 (12), 1986-1988, 2003 | 184 | 2003 |
| Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc Applied physics letters 53 (12), 1092-1094, 1988 | 140 | 1988 |
| metal-oxide-semiconductor field-effect transistor JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ... Applied Physics Letters 77 (20), 3230-3232, 2000 | 139 | 2000 |
| enhancement mode metal-oxide semiconductor field-effect transistors Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ... Applied physics letters 84 (15), 2919-2921, 2004 | 134 | 2004 |
| Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures SW Feng, YC Cheng, YY Chung, CC Yang, YS Lin, C Hsu, KJ Ma, JI Chyi Journal of applied physics 92 (8), 4441-4448, 2002 | 127 | 2002 |
| GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ... Materials Science and Engineering: B 82 (1-3), 227-231, 2001 | 127 | 2001 |
| Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ... IEEE Transactions on Electron devices 49 (1), 32-36, 2002 | 125 | 2002 |
| Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai, NT Yeh, TE Nee, JI Chyi Physical Review B 62 (11), 6959, 2000 | 120 | 2000 |
| High voltage GaN schottky rectifiers GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ... IEEE Transactions on Electron Devices 47 (4), 692-696, 2000 | 117 | 2000 |
| Comparison of GaN pin and Schottky rectifier performance AP Zhan, GT Dang, F Ren, H Cho, KP Lee, SJ Pearton, JI Chyi, TY Nee, ... IEEE Transactions on Electron Devices 48 (3), 407-411, 2001 | 112 | 2001 |
| Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells CC Chuo, CM Lee, JI Chyi Applied Physics Letters 78 (3), 314-316, 2001 | 109 | 2001 |
| Mechanism of luminescence in InGaN/GaN multiple quantum wells HC Yang, PF Kuo, TY Lin, YF Chen, KH Chen, LC Chen, JI Chyi Applied Physics Letters 76 (25), 3712-3714, 2000 | 105 | 2000 |
| Vertical and lateral GaN rectifiers on free-standing GaN substrates AP Zhang, JW Johnson, B Luo, F Ren, SJ Pearton, SS Park, YJ Park, ... Applied Physics Letters 79 (10), 1555-1557, 2001 | 101 | 2001 |
| Molecular beam epitaxial growth and characterization of InSb on Si JI Chyi, D Biswas, SV Iyer, NS Kumar, H Morkoc, R Bean, K Zanio, ... Applied physics letters 54 (11), 1016-1018, 1989 | 101 | 1989 |
| Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing TM Hsu, YS Lan, WH Chang, NT Yeh, JI Chyi Applied Physics Letters 76 (6), 691-693, 2000 | 100 | 2000 |
Fan RenUniversity of Florida, Bell Lab, AT&TVerified email at che.ufl.edu
