Kehao Zhang
Kehao Zhang
Ph.D. Huawei; Micron Technology, Inc. The Pennsyvania State University
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2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ...
2D Materials 3 (4), 042001, 2016
Manganese Doping of Monolayer MoS2: The Substrate Is Critical
K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ...
Nano letters 15 (10), 6586-6591, 2015
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
Realizing large-scale, electronic-grade two-dimensional semiconductors
YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides
A Azizi, S Eichfeld, G Geschwind, K Zhang, B Jiang, D Mukherjee, ...
ACS nano 9 (5), 4882-4890, 2015
Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping
K Zhang, BM Bersch, J Joshi, R Addou, CR Cormier, C Zhang, K Xu, ...
Advanced Functional Materials 28 (16), 1706950, 2018
Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ...
Science advances 3 (10), e1701661, 2017
Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2–WSe2 Heterobilayers
Y Pan, S Fölsch, Y Nie, D Waters, YC Lin, B Jariwala, K Zhang, K Cho, ...
Nano letters 18 (3), 1849-1855, 2018
First principles kinetic Monte Carlo study on the growth patterns of WSe2 monolayer
Y Nie, C Liang, K Zhang, R Zhao, SM Eichfeld, PR Cha, L Colombo, ...
2D Materials 3 (2), 025029, 2016
Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide
K Zhang, BM Bersch, F Zhang, NC Briggs, S Subramanian, K Xu, ...
ACS applied materials & interfaces 10 (47), 40831-40837, 2018
ACS nano
H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tomanek, PD Ye
ACS Nano 8 (1031), 2014
Multiscale framework for simulation-guided growth of 2D materials
K Momeni, Y Ji, K Zhang, JA Robinson, LQ Chen
npj 2D Materials and Applications 2 (1), 27, 2018
Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides
K Zhang, B Jariwala, J Li, NC Briggs, B Wang, D Ruzmetov, RA Burke, ...
Nanoscale 10 (1), 336-341, 2018
Large-area synthesis of WSe2 from WO3 by selenium–oxygen ion exchange
P Browning, S Eichfeld, K Zhang, L Hossain, YC Lin, K Wang, N Lu, ...
2D Materials 2 (1), 014003, 2015
Selective-area growth and controlled substrate coupling of transition metal dichalcogenides
BM Bersch, SM Eichfeld, YC Lin, K Zhang, GR Bhimanapati, AF Piasecki, ...
2D Materials 4 (2), 025083, 2017
Flat Bands and Mechanical Deformation Effects in the Moiré Superlattice of MoS2-WSe2 Heterobilayers
D Waters, Y Nie, F Lüpke, Y Pan, S Fölsch, YC Lin, B Jariwala, ...
ACS nano 14 (6), 7564-7573, 2020
Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures
S Subramanian, DD Deng, K Xu, N Simonson, K Wang, K Zhang, J Li, ...
Carbon 125, 551-556, 2017
Exciton and Trion Energy Transfer from Giant Semiconductor Nanocrystals to MoS2 Monolayers
S Sampat, T Guo, K Zhang, JA Robinson, Y Ghosh, KP Acharya, H Htoon, ...
ACS Photonics 3 (4), 708-715, 2016
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN
TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
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