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Avinash Kumar Gupta
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Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory
AK Parit, MS Yadav, AK Gupta, A Mikhaylov, B Rawat
Chaos, Solitons & Fractals 145, 110818, 2021
172021
Performance projection of 2-D material-based CMOS inverters for sub-10-nm channel length
A Rawat, AK Gupta, B Rawat
IEEE Transactions on Electron Devices 68 (7), 3622-3629, 2021
92021
Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory
AK Gupta, MS Yadav, B Rawat
Memories - Materials, Devices, Circuits and Systems 5 (https://doi.org/10 …, 2023
2023
“How Good Silicon Oxide-based Memristor Can be?
MS Yadav, AK Gupta, V Kanupriya, B Rawat
35th IEEE International Conference on VLSI Design, 2022
2022
Role of Resistive Layer in Threshold Memory Switching Memristor Device
Avinash Kumar Gupta*, M. S. Yadav* (*Equal Contribution), Brajesh Rawat
4th International Conference on Memristive Materials, Devices and Systems …, 2021
2021
Single and Multilayer Black Phosphorous-based CMOS Inverter for Deep Sub-10 nm Technology
A Rawat, AK Gupta, B Rawat
20th International Workshop on Physics of Semiconductor Devices, 2019
2019
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Articles 1–6