| Small-diameter silicon nanowire surfaces DDD Ma, CS Lee, FCK Au, SY Tong, ST Lee Science 299 (5614), 1874-1877, 2003 | 1442 | 2003 |
| Surface crystallography by LEED: theory, computation and structural results MA Van Hove, SY Tong Springer Science & Business Media, 2012 | 1055 | 2012 |
| Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire DG Zhao, SJ Xu, MH Xie, SY Tong, H Yang Applied physics letters 83 (4), 677-679, 2003 | 464 | 2003 |
| Low‐energy electron diffraction analysis of the Si (111) 7× 7 structure SY Tong, H Huang, CM Wei, WE Packard, FK Men, G Glander, MB Webb Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3 …, 1988 | 250 | 1988 |
| Surface structure refinements of 2H MoS2, 2H NbSe2 and W (100) p (2× 1) O via new reliability factors for surface crystallography MA Van Hove, SY Tong, MH Elconin Surface Science 64 (1), 85-95, 1977 | 250 | 1977 |
| Vacancy-buckling model for the (2× 2) GaAs (111) surface SY Tong, G Xu, WN Mei Physical review letters 52 (19), 1693, 1984 | 239 | 1984 |
| Focusing and diffraction effects in angle-resolved x-ray photoelectron spectroscopy HC Poon, SY Tong Physical Review B 30 (10), 6211, 1984 | 230 | 1984 |
| Chemisorption bond lengths of chalcogen overlayers at a low coverage by convergent perturbation methods M Van Hove, SY Tong Journal of Vacuum Science and Technology 12 (1), 230-233, 1975 | 216 | 1975 |
| Anisotropic step-flow growth and island growth of GaN (0001) by molecular beam epitaxy MH Xie, SM Seutter, WK Zhu, LX Zheng, H Wu, SY Tong Physical review letters 82 (13), 2749, 1999 | 210 | 1999 |
| Importance of multiple forward scattering in medium-and high-energy electron emission and/or diffraction spectroscopies SY Tong, HC Poon, DR Snider Physical Review B 32 (4), 2096, 1985 | 210 | 1985 |
| Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs (110) SY Tong, AR Lubinsky, BJ Mrstik, MA Van Hove Physical Review B 17 (8), 3303, 1978 | 209 | 1978 |
| Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys Q Li, SJ Xu, WC Cheng, MH Xie, SY Tong, CM Che, H Yang Applied Physics Letters 79 (12), 1810-1812, 2001 | 187 | 2001 |
| Energy extension in three-dimensional atomic imaging by electron emission holography SY Tong, H Li, H Huang Physical review letters 67 (22), 3102, 1991 | 167 | 1991 |
| Inelastic scattering of electrons from adsorbate vibrations: Large-angle deflections SY Tong, CH Li, DL Mills Physical Review Letters 44 (6), 407, 1980 | 157 | 1980 |
| Large-angle inelastic electron scattering from adsorbate vibrations: Basic theory CH Li, SY Tong, DL Mills Physical Review B 21 (8), 3057, 1980 | 155 | 1980 |
| Structures and energetics of hydrogen-terminated silicon nanowire surfaces RQ Zhang, Y Lifshitz, DDD Ma, YL Zhao, T Frauenheim, ST Lee, SY Tong The Journal of Chemical Physics 123 (14), 2005 | 143 | 2005 |
| Phase-shift correction in three-dimensional imaging using foward-scattering photoemission and Auger spectoscopies SY Tong, CM Wei, TC Zhao, H Huang, H Li Physical review letters 66 (1), 60, 1991 | 139 | 1991 |
| Method for spatially resolved imaging of energy-dependent photoelectron diffraction SY Tong, H Huang, CM Wei Physical Review B 46 (4), 2452, 1992 | 134 | 1992 |
| A model for steady-state luminescence of localized-state ensemble Q Li, SJ Xu, MH Xie, SY Tong Europhysics Letters 71 (6), 994, 2005 | 130 | 2005 |
| Growth mode and strain evolution during InN growth on GaN (0001) by molecular-beam epitaxy YF Ng, YG Cao, MH Xie, XL Wang, SY Tong Applied physics letters 81 (21), 3960-3962, 2002 | 128 | 2002 |
