| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... Electron Devices Meeting (IEDM), 2011 IEEE International, 28.1. 1-28.1. 4, 2011 | 123 | 2011 |
| Demonstration of optical gain at 1.06 μm in a neodymium-doped polyimide waveguide G Karve, B Bihari, RT Chen Applied Physics Letters 77 (9), 1253-1255, 2000 | 87 | 2000 |
| InGaAs/InAlAs avalanche photodiode with undepleted absorber N Li, R Sidhu, X Li, F Ma, X Zheng, S Wang, G Karve, S Demiguel, ... Applied physics letters 82 (13), 2175-2177, 2003 | 83 | 2003 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016 | 60 | 2016 |
| Origin of dark counts in avalanche photodiodes operated in Geiger mode G Karve, S Wang, F Ma, X Li, JC Campbell, RG Ispasoiu, DS Bethune, ... Applied Physics Letters 86 (6), 063505, 2005 | 54 | 2005 |
| Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model S Wang, F Ma, X Li, G Karve, X Zheng, JC Campbell Applied physics letters 82 (12), 1971-1973, 2003 | 53 | 2003 |
| Geiger mode operation of an In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode G Karve, X Zheng, X Zhang, X Li, N Li, S Wang, F Ma, A Holmes, ... IEEE journal of quantum electronics 39 (10), 1281-1286, 2003 | 44 | 2003 |
| Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes DA Ramirez, MM Hayat, G Karve, JC Campbell, SN Torres, BEA Saleh, ... IEEE Journal of Quantum Electronics 42 (2), 137-145, 2006 | 42 | 2006 |
| Dual high-k oxides with sige channel TY Luo, GV Karve, DG Tekleab US Patent 8,017,469, 2011 | 39 | 2011 |
| Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation GS Spencer, JM Grant, GV Karve US Patent 7,790,528, 2010 | 38 | 2010 |
| Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes AL Beck, G Karve, S Wang, J Ming, X Guo, JC Campbell IEEE photonics technology letters 17 (7), 1507-1509, 2005 | 36 | 2005 |
| Scaling challenges of FinFET architecture below 40nm contacted gate pitch A Razavieh, P Zeitzoff, DE Brown, G Karve, EJ Nowak Device Research Conference (DRC), 2017 75th Annual, 1-2, 2017 | 21 | 2017 |
| Step height reduction between SOI and EPI for DSO and BOS integration GV Karve, D Eades, GS Spencer, TR White US Patent 7,749,829, 2010 | 18 | 2010 |
| Low-temperature breakdown properties of avalanche photodiodes F Ma, G Karve, X Zheng, X Sun, AL Holmes Jr, JC Campbell Applied physics letters 81 (10), 1908-1910, 2002 | 17 | 2002 |
| Dual gate oxide device integration GV Karve, SB Samavedam, WJ Taylor Jr US Patent 7,709,331, 2010 | 16 | 2010 |
| GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06/spl mu/m R Sidhu, H Chen, N Duan, GV Karve, JC Campbell, AL Holmes Electronics Letters 40 (20), 1296-1297, 2004 | 14 | 2004 |
| FinFET device having a high germanium content fin structure and method of making same Q Liu, B Doris, G Karve US Patent 9,431,514, 2016 | 13 | 2016 |
| A thin-film polymeric waveguide beam deflector based on thermooptic effect CH Jang, L Sun, JH Kim, X Lu, G Karve, RT Chen, JJ Maki IEEE Photonics Technology Letters 13 (5), 490-492, 2001 | 13 | 2001 |
| Cutting fins and gates in CMOS devices H Bu, K Cheng, AM Greene, D Guo, SK Kanakasabapathy, G Karve, ... US Patent 9,721,848, 2017 | 12 | 2017 |
| Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT G Tsutsui, R Bao, K Lim, RR Robison, RA Vega, J Yang, Z Liu, M Wang, ... Electron Devices Meeting (IEDM), 2016 IEEE International, 17.4. 1-17.4. 4, 2016 | 10 | 2016 |
