Gauri Karve
Gauri Karve
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A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 28.1. 1-28.1. 4, 2011
Demonstration of optical gain at 1.06 μm in a neodymium-doped polyimide waveguide
G Karve, B Bihari, RT Chen
Applied Physics Letters 77 (9), 1253-1255, 2000
InGaAs/InAlAs avalanche photodiode with undepleted absorber
N Li, R Sidhu, X Li, F Ma, X Zheng, S Wang, G Karve, S Demiguel, ...
Applied physics letters 82 (13), 2175-2177, 2003
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ...
VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016
Origin of dark counts in avalanche photodiodes operated in Geiger mode
G Karve, S Wang, F Ma, X Li, JC Campbell, RG Ispasoiu, DS Bethune, ...
Applied Physics Letters 86 (6), 063505, 2005
Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model
S Wang, F Ma, X Li, G Karve, X Zheng, JC Campbell
Applied physics letters 82 (12), 1971-1973, 2003
Geiger mode operation of an In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode
G Karve, X Zheng, X Zhang, X Li, N Li, S Wang, F Ma, A Holmes, ...
IEEE journal of quantum electronics 39 (10), 1281-1286, 2003
Detection efficiencies and generalized breakdown probabilities for nanosecond-gated near infrared single-photon avalanche photodiodes
DA Ramirez, MM Hayat, G Karve, JC Campbell, SN Torres, BEA Saleh, ...
IEEE Journal of Quantum Electronics 42 (2), 137-145, 2006
Dual high-k oxides with sige channel
TY Luo, GV Karve, DG Tekleab
US Patent 8,017,469, 2011
Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation
GS Spencer, JM Grant, GV Karve
US Patent 7,790,528, 2010
Geiger mode operation of ultraviolet 4H-SiC avalanche photodiodes
AL Beck, G Karve, S Wang, J Ming, X Guo, JC Campbell
IEEE photonics technology letters 17 (7), 1507-1509, 2005
Scaling challenges of FinFET architecture below 40nm contacted gate pitch
A Razavieh, P Zeitzoff, DE Brown, G Karve, EJ Nowak
Device Research Conference (DRC), 2017 75th Annual, 1-2, 2017
Step height reduction between SOI and EPI for DSO and BOS integration
GV Karve, D Eades, GS Spencer, TR White
US Patent 7,749,829, 2010
Low-temperature breakdown properties of avalanche photodiodes
F Ma, G Karve, X Zheng, X Sun, AL Holmes Jr, JC Campbell
Applied physics letters 81 (10), 1908-1910, 2002
Dual gate oxide device integration
GV Karve, SB Samavedam, WJ Taylor Jr
US Patent 7,709,331, 2010
GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06/spl mu/m
R Sidhu, H Chen, N Duan, GV Karve, JC Campbell, AL Holmes
Electronics Letters 40 (20), 1296-1297, 2004
FinFET device having a high germanium content fin structure and method of making same
Q Liu, B Doris, G Karve
US Patent 9,431,514, 2016
A thin-film polymeric waveguide beam deflector based on thermooptic effect
CH Jang, L Sun, JH Kim, X Lu, G Karve, RT Chen, JJ Maki
IEEE Photonics Technology Letters 13 (5), 490-492, 2001
Cutting fins and gates in CMOS devices
H Bu, K Cheng, AM Greene, D Guo, SK Kanakasabapathy, G Karve, ...
US Patent 9,721,848, 2017
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
G Tsutsui, R Bao, K Lim, RR Robison, RA Vega, J Yang, Z Liu, M Wang, ...
Electron Devices Meeting (IEDM), 2016 IEEE International, 17.4. 1-17.4. 4, 2016
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