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Kaijian XING
Kaijian XING
Macau University of Science and Technology RMIT University Monash University
Verified email at monash.edu.au
Title
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Cited by
Year
Atomic layer deposition-developed two-dimensional α-MoO3 windows excellent hydrogen peroxide electrochemical sensing capabilities
Z Wei, Z Hai, MK Akbari, D Qi, K Xing, Q Zhao, F Verpoort, J Hu, L Hyde, ...
Sensors and Actuators B: Chemical 262, 334-344, 2018
592018
MoO3 induces p-type surface conductivity by surface transfer doping in diamond
K Xing, Y Xiang, M Jiang, DL Creedon, G Akhgar, SA Yianni, H Xiao, ...
Applied Surface Science 509, 144890, 2020
382020
Periodic nanostructures: preparation, properties and applications
H Yin, K Xing, Y Zhang, DMAS Dissanayake, Z Lu, H Zhao, Z Zeng, ...
Chemical Society Reviews 50, 6423, 2021
342021
A DFT study of the surface charge transfer doping of diamond by chromium trioxide
Y Xiang, M Jiang, H Xiao, K Xing, X Peng, S Zhang, DC Qi
Applied Surface Science 496, 143604, 2019
302019
Ultrasensitive NO2 Gas Sensors Based on Layered α‐MoO3 Nanoribbons
W Li, K Xing, P Liu, C Chuang, YR Lu, TS Chan, T Tesfamichael, N Motta, ...
Advanced Materials Technologies, 2100579, 2021
282021
Ultrasonic spray pyrolysis of antimony‐doped tin oxide transparent conductive coatings
J Kim, BJ Murdoch, JG Partridge, K Xing, DC Qi, J Lipton‐Duffin, ...
Advanced Materials Interfaces 7 (18), 2000655, 2020
262020
Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe
L Zhang, T Yang, MF Sahdan, W Xu, K Xing, YP Feng, W Zhang, Z Wang, ...
Advanced Electronic Materials 2100559, 1-7, 2021
202021
Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4 K
K Xing, A Tsai, S Rubanov, DL Creedon, SA Yianni, L Zhang, WC Hao, ...
Applied Physics Letters 116 (11), 2020
202020
High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond
K Xing, S Zhang, A Tsai, H Xiao, DL Creedon, SA Yianni, JC McCallum, ...
Diamond and Related Materials 108, 107865, 2020
152020
Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond
K Xing, DL Creedon, SA Yianni, G Akhgar, L Zhang, L Ley, JC McCallum, ...
Carbon 164, 244-250, 2020
142020
Highly Sensitive NO2 Gas Sensors Based on MoS2@MoO3 Magnetic Heterostructure
W Li, M Shahbazi, K Xing, T Tesfamichael, N Motta, DC Qi
Nanomaterials 12 (8), 1303, 2022
132022
Large-sized α-MoO3 layered single crystals for superior NO2 gas sensing
W Li, Q Ou, X Wang, K Xing, T Tesfamichael, N Motta, DC Qi
Applied Surface Science 586, 152793, 2022
122022
Bi-stable electronic states of cobalt phthalocyanine molecules on two-dimensional vanadium diselenide
L Zhang, T Yang, W Zhang, D Qi, X He, K Xing, PKJ Wong, YP Feng, ...
Applied Materials Today 18, 100535, 2020
122020
Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method
K Xing, P Aukarasereenont, S Rubanov, A Zavabeti, DL Creedon, W Li, ...
ACS Applied Electronic Materials 4 (5), 2272-2280, 2022
92022
Defects, band bending and ionization rings in MoS2
I Di Bernardo, J Blyth, L Watson, K Xing, YH Chen, SY Chen, ...
Journal of Physics: Condensed Matter 34, 174002, 2022
72022
Surface Transfer Doping of Diamond Using Solution-Processed Molybdenum Trioxide
K Xing, W Li, E Della Gaspera, J van Embden, L Zhang, SA Yianni, ...
Carbon 175, 20-26, 2021
72021
Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric
K Xing, A Tsai, DL Creedon, SA Yianni, JC McCallum, L Ley, DC Qi, ...
Applied Physics Letters 116 (17), 2020
72020
Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond
SA Yianni, DL Creedon, AK Schenk, K Xing, G Akhgar, DI Hoxley, L Ley, ...
Diamond and Related Materials 116, 108377, 2021
62021
Is Charge-Transfer Doping Possible at the Interfaces of Monolayer VSe2 with MoO3 and K?
L Zhang, X He, K Xing, W Zhang, A Tadich, PKJ Wong, DC Qi, ATS Wee
ACS applied materials & interfaces 11 (46), 43789-43795, 2019
42019
P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3
YH Chen, K Xing, S Liu, LN Holtzman, DL Creedon, JC McCallum, ...
ACS Applied Electronic Materials 4, 5379, 2022
32022
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