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Boris Ber
Boris Ber
Verified email at mail.ioffe.ru
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Year
Globus-M results as the basis for a compact spherical tokamak with enhanced parameters Globus-M2
VK Gusev, EA Azizov, AB Alekseev, AF Arneman, NN Bakharev, ...
Nuclear Fusion 53 (9), 093013, 2013
1112013
Optical properties of nanodiamond layers
AE Aleksenskii, VY Osipov, AY Vul’, BY Ber, AB Smirnov, VG Melekhin, ...
Physics of the solid State 43, 145-150, 2001
972001
Review of Globus-M spherical tokamak results
VK Gusev, NN Bakharev, VA Belyakov, BY Ber, EN Bondarchuk, ...
Nuclear Fusion 55 (10), 104016, 2015
722015
Overview of results obtained at the Globus-M spherical tokamak
VK Gusev, SE Aleksandrov, VK Alimov, II Arkhipov, BB Ayushin, ...
Nuclear fusion 49 (10), 104021, 2009
522009
Mg‐Doped Hexagonal InN/Al2O3 Films Grown by MBE
VV Mamutin, VA Vekshin, VY Davydov, VV Ratnikov, YA Kudriavtsev, ...
physica status solidi (a) 176 (1), 373-378, 1999
481999
Interplay of kinetics and thermodynamics in molecular beam epitaxy of (Mg, Zn, Cd)(S, Se)
S Ivanov, S Sorokin, I Krestnikov, N Faleev, B Ber, I Sedova, ...
Journal of crystal growth 184, 70-74, 1998
461998
Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN: Mg layers
WV Lundin, AV Sakharov, EE Zavarin, MA Sinitsyn, AE Nikolaev, ...
Semiconductors 43 (7), 963-967, 2009
372009
Determination of the Mn concentration in GaMnAs
LX Zhao, RP Campion, PF Fewster, RW Martin, BY Ber, AP Kovarsky, ...
Semiconductor science and technology 20 (5), 369, 2005
372005
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
BY Ber, YA Kudriavtsev, AV Merkulov, SV Novikov, DE Lacklison, ...
Semiconductor science and technology 13 (1), 71, 1998
361998
Globus-M plasma physics research for fusion application and compact neutron source development
VK Gusev, NN Bakharev, BY Ber, VV Bulanin, FV Chernyshev, ...
Plasma Physics and Controlled Fusion 58 (1), 014032, 2015
352015
Properties of Si‐Doped GaN Layers Grown by HVPE
AV Fomin, AE Nikolaev, IP Nikitina, AS Zubrilov, MG Mynbaeva, ...
physica status solidi (a) 188 (1), 433-437, 2001
342001
Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques
B Ber, P Bábor, PN Brunkov, P Chapon, MN Drozdov, R Duda, ...
Thin Solid Films 540, 96-105, 2013
312013
Radiation-stimulated photoluminescence in electron irradiated 4H-SiC
AA Lebedev, BY Ber, NV Seredova, DY Kazantsev, VV Kozlovski
Journal of Physics D: Applied Physics 48 (48), 485106, 2015
282015
Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range
PN Aruev, MM Barysheva, BY Ber, NV Zabrodskaya, VV Zabrodskii, ...
Quantum Electronics 42 (10), 943, 2012
272012
High growth rate MOVPE of Al (Ga) N in planetary reactor
WV Lundin, AE Nikolaev, MA Yagovkina, PN Brunkov, MM Rozhavskaya, ...
Journal of crystal growth 352 (1), 209-213, 2012
272012
Incorporation of Mg in GaN grown by molecular beam epitaxy
JW Orton, CT Foxon, TS Cheng, SE Hooper, SV Novikov, BY Ber, ...
Journal of crystal growth 197 (1-2), 7-11, 1999
271999
Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors
DV Gulyaev, KS Zhuravlev, AK Bakarov, AI Toropov, DY Protasov, ...
Journal of Physics D: Applied Physics 49 (9), 095108, 2016
232016
Study of GaN doping with carbon from propane in a wide range of MOVPE conditions
WV Lundin, AV Sakharov, EE Zavarin, DY Kazantsev, BY Ber, ...
Journal of Crystal Growth 449, 108-113, 2016
222016
Computer simulation of the sputtering of polyatomic multilayered materials with consideration of the spatial overlapping of the collision cascades
YV Trushin, BJ Ber, VS Kharlamov, EE Zhurkin
Journal of Nuclear Materials 233, 991-995, 1996
221996
Effect of deposition parameters on the properties of In2O3/InP junctions
V Korobov, Y Shapira, B Ber, K Faleev, D Zushinskiy
Journal of applied physics 75 (4), 2264-2269, 1994
221994
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