| Low frequency noise and trap density in GaN/AlGaN field effect transistors P Sai, J Jorudas, M Dub, M Sakowicz, V Jakštas, DB But, P Prystawko, ... Applied Physics Letters 115 (18), 183501, 2019 | 24 | 2019 |
| Experimental evidence of temperature dependent effective mass in AlGaN/GaN heterostructures observed via THz spectroscopy of 2D plasmons D Pashnev, VV Korotyeyev, J Jorudas, T Kaplas, V Janonis, ... Applied Physics Letters 117 (16), 162101, 2020 | 20 | 2020 |
| Terahertz time-domain spectroscopy of two-dimensional plasmons in AlGaN/GaN heterostructures D Pashnev, T Kaplas, V Korotyeyev, V Janonis, A Urbanowicz, J Jorudas, ... Applied Physics Letters 117 (5), 051105, 2020 | 18 | 2020 |
| AlGaN/GaN on SiC devices without a GaN buffer layer: Electrical and noise characteristics J Jorudas, A Šimukovič, M Dub, M Sakowicz, P Prystawko, S Indrišiūnas, ... Micromachines 11 (12), 1131, 2020 | 15 | 2020 |
| Optical performance of two dimensional electron gas and GaN: C buffer layers in AlGaN/AlN/GaN heterostructures on SiC substrate RB Adamov, D Pashnev, VA Shalygin, MD Moldavskaya, MY Vinnichenko, ... Applied Sciences 11 (13), 6053, 2021 | 11 | 2021 |
| Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature I Grigelionis, J Jorudas, V Jakštas, V Janonis, I Kašalynas, P Prystawko, ... Materials Science in Semiconductor Processing 93, 280-283, 2019 | 10 | 2019 |
| Development of AlGaN/GaN/SiC high-electron-mobility transistors for THz detection V Jakštas, J Jorudas, V Janonis, L Minkevičius, I Kašalynas, P Prystawko, ... Lithuanian Journal of Physics 58 (2), 2018 | 9 | 2018 |
| High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate RM Balagula, L Subačius, J Jorudas, V Janonis, P Prystawko, ... Materials 15 (6), 2066, 2022 | 4 | 2022 |
| Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside S Indrišiūnas, E Svirplys, J Jorudas, I Kašalynas Micromachines 12 (4), 407, 2021 | 4 | 2021 |
| Electrically-pumped THz emitters based on plasma waves excitation in III-nitride structures V Janonis, D Pashnev, I Grigelionis, VV Korotyeyev, RM Balagula, ... Terahertz Emitters, Receivers, and Applications XI 11499, 30-37, 2020 | 4 | 2020 |
| Development of the planar AlGaN/GaN bow-tie diodes for terahertz detection J Jorudas, J Malakauskaitė, L Subačius, V Janonis, V Jakštas, ... 2019 44th International Conference on Infrared, Millimeter, and Terahertz …, 2019 | 3 | 2019 |
| Investigation of Electron Effective Mass in AlGaN/GaN Heterostructures by THz Spectroscopy of Drude Conductivity D Pashnev, VV Korotyeyev, J Jorudas, A Urbanowicz, P Prystawko, ... IEEE Transactions on Electron Devices 69 (7), 3636-3640, 2022 | 2 | 2022 |
| Development of quaternary InAlGaN barrier layer for high electron mobility transistor structures J Jorudas, P Prystawko, A Šimukovič, R Aleksiejūnas, J Mickevičius, ... Materials 15 (3), 1118, 2022 | 2 | 2022 |
| Characterization of graphene Drude conductivity by terahertz and infrared spectroscopy methods J Jorudas, D Pashnev, N Alexeeva, I Ignatjev, A Urbanowicz, I Kašalynas 2021 46th International Conference on Infrared, Millimeter and Terahertz …, 2021 | 2 | 2021 |
| Investigation of THz transmission through semi-insulating substrate with a thin conductive layer D Pashnev, J Jorudas, R Balagula, A Urbanowicz, I Kašalynas 2021 46th International Conference on Infrared, Millimeter and Terahertz …, 2021 | 2 | 2021 |
| Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene J Jorudas, D Pashnev, I Kašalynas, I Ignatjev, G Niaura, A Selskis, ... Nanomaterials 12 (22), 4017, 2022 | 1 | 2022 |
| Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures E Šermukšnis, J Jorudas, A Šimukovič, V Kovalevskij, I Kašalynas Applied Sciences 12 (21), 11079, 2022 | 1 | 2022 |
| Space-charge domains in n-type GaN epilayers under pulsed electric field RM Balagula, L Subačius, J Jorudas, P Prystawko, M Grabowski, ... Applied Physics Letters 121 (10), 102101, 2022 | 1 | 2022 |
| Electrically-controlled THz emission from AlGaN/GaN/Al2O3 high electron mobility transistor structures at a temperature of 20 K I Grigelionis, P Prystawko, J Jorudas, I Kašalynas 2019 44th International Conference on Infrared, Millimeter, and Terahertz …, 2019 | 1 | 2019 |
| Towards terahertz optopair based on AlGaN/GaN HEMTs M Sakowicz, M Dub, P Sai, DB But, G Cywinski, J Jorudas, A Šimukovic, ... Terahertz Emitters, Receivers, and Applications XIII 12230, 1223003, 2022 | | 2022 |
