Andrew Steckl
Title
Cited by
Cited by
Year
Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as an electron blocking layer
JA Hagen, W Li, AJ Steckl, JG Grote
Applied Physics Letters 88 (17), 171109, 2006
3452006
Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
AJ Steckl, JC Heikenfeld, DS Lee, MJ Garter, CC Baker, Y Wang, R Jones
IEEE Journal of Selected Topics in Quantum Electronics 8 (4), 749-766, 2002
3182002
A nearly ideal phosphor-converted white light-emitting diode
SC Allen, AJ Steckl
Applied physics letters 92 (14), 128, 2008
3172008
Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
J Heikenfeld, M Garter, DS Lee, R Birkhahn, AJ Steckl
Applied Physics Letters 75 (9), 1189-1191, 1999
3151999
DNA–a new material for photonics?
AJ Steckl
Nature Photonics 1 (1), 3-5, 2007
3032007
Superhydrophobic and oleophobic fibers by coaxial electrospinning
D Han, AJ Steckl
Langmuir 25 (16), 9454-9462, 2009
2962009
Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
AJ Steckl, R Birkhahn
Applied physics letters 73 (12), 1700-1702, 1998
2941998
Optoelectronic properties and applications of rare-earth-doped GaN
AJ Steckl, JM Zavada
MRS Bulletin 24 (9), 33-38, 1999
2911999
Light emissive signage devices based on lightwave coupling
J Heikenfeld, A Steckl, J Rudolph
US Patent 20,070,031,097, 0
291*
High-voltage Ni-and Pt-SiC Schottky diodes utilizing metal field plate termination
V Saxena, JN Su, AJ Steckl
IEEE transactions on electron devices 46 (3), 456-464, 1999
2321999
Light emissive display based on lightwave coupling
AJ Steckl, JC Heikenfeld
US Patent 7,123,796, 2006
1782006
A review of SiC reactive ion etching in fluorinated plasmas
PH Yih, V Saxena, AJ Steckl
physica status solidi (b) 202 (1), 605-642, 1997
1781997
Light emissive signage devices based on lightwave coupling
AJ Steckl, JC Heikenfeld
US Patent 20,080,297,880, 0
178*
Blue emission from Tm-doped GaN electroluminescent devices
AJ Steckl, M Garter, DS Lee, J Heikenfeld, R Birkhahn
Applied physics letters 75 (15), 2184-2186, 1999
1691999
Epitaxial growth of beta-SiC on Si by RTCVD with C3H8 and SiH4
AJ Steckl, JP Li
ITED 39, 64-74, 1992
1641992
Spectral and time-resolved photoluminescence studies of Eu-doped GaN
EE Nyein, U Hömmerich, J Heikenfeld, DS Lee, AJ Steckl, JM Zavada
Applied physics letters 82 (11), 1655-1657, 2003
1622003
Nucleation and void formation mechanisms in SiC thin film growth on Si by carbonization
JP Li, AJ Steckl
Journal of the Electrochemical Society 142 (2), 634, 1995
1551995
Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
R Birkhahn, M Garter, AJ Steckl
Applied physics letters 74 (15), 2161-2163, 1999
1511999
Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine
Z Yu, W Li, JA Hagen, Y Zhou, D Klotzkin, JG Grote, AJ Steckl
Applied optics 46 (9), 1507-1513, 2007
1322007
Three-color integration on rare-earth-doped GaN electroluminescent thin films
YQ Wang, AJ Steckl
Applied physics letters 82 (4), 502-504, 2003
1272003
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