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Richard J. Krantz
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Applied field and total dose dependence of trapped charge buildup in MOS devices
RJ Krantz, LW Aukerman, TC Zietlow
IEEE Transactions on Nuclear Science 34 (6), 1196-1201, 1987
941987
Neutron radiation effects in GaAs ion‐implanted metal‐semiconductor field‐effect transistors
BK Janousek, WE Yamada, RJ Krantz, WL Bloss
Journal of applied physics 63 (5), 1678-1686, 1988
311988
Maximally even sets and configurations: common threads in mathematics, physics, and music
J Douthett, R Krantz
Journal of Combinatorial Optimization 14, 385-410, 2007
242007
High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage
RJ Krantz, WL Bloss, MJ O'Loughlin
IEEE Transactions on Nuclear Science 35 (6), 1438-1443, 1988
231988
Continued fractions, best measurements, and musical scales and intervals
J Douthett, R Krantz
Journal of Mathematics and Music 1 (1), 47-70, 2007
212007
Energy extremes and spin configurations for the one‐dimensional antiferromagnetic Ising model with arbitrary‐range interaction
J Douthett, R Krantz
Journal of Mathematical Physics 37 (7), 3334-3353, 1996
211996
Total dose-induced charge buildup in nitrided-oxide MOS devices
RJ Krantz, J Scarpulla, JS Cable
IEEE transactions on nuclear science 38 (6), 1746-1753, 1991
171991
The role of unintentional acceptor concentration on the threshold voltage of modulation-doped field-effect transistors
RJ Krantz, WL Bloss
IEEE transactions on electron devices 36 (2), 451-453, 1989
171989
A measure of the reasonableness of equal‐tempered musical scales
RJ Krantz, J Douthett
The Journal of the Acoustical Society of America 95 (6), 3642-3650, 1994
161994
Algorithmic and computational approaches to pure-tone approximations of equal-tempered musical scales
R Krantz, J Douthett
Journal of Mathematics and Music 5 (3), 171-194, 2011
152011
Maximally even sets and the devil’s-staircase phase diagram for the one-dimensional Ising antiferromagnet with arbitrary-range interaction
RJ Krantz, J Douthett, SD Doty
Journal of Mathematical Physics 39 (9), 4675-4682, 1998
151998
Construction and interpretation of equal-tempered scales using frequency ratios, maximally even sets, and P-cycles
RJ Krantz, J Douthett
The Journal of the Acoustical Society of America 107 (5), 2725-2734, 2000
142000
Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons
BK Janousek, RJ Krantz, WL Bloss, WE Yamada, S Brown, RL Remke, ...
IEEE Transactions on Nuclear Science 36 (6), 2223-2228, 1989
131989
ТС Z i et I о w
RJ Krantz, LW Aukerman
IEEE Trans. Nucl. Sei 34 (6), 1196-1201, 1987
131987
Radiation hard GaAs high electron mobility transistor
MJ O'loughlin, RJ Krantz, WL Bloss III
US Patent 5,028,968, 1991
101991
Two musical paths to the Farey series and devil's staircase
JHE Cartwright, J Douthett, DL González, R Krantz, O Piro
Journal of Mathematics and Music 4 (1), 57-74, 2010
82010
Dinner tables and concentric circles: a harmony of mathematics, music, and physics
J Douthett, RJ Krantz
The College Mathematics Journal 39 (3), 203-211, 2008
82008
The influence of Fermi-level pinning at the GaAs substrate on HEMT threshold voltage
RJ Krantz, DC Mayer, WL Bloss
Solid-state electronics 33 (9), 1189-1195, 1990
81990
Maximally Even Sets: A Discovery in Mathemtical Music Theory is Found to Apply in Physics
R Krantz, J Douthett, J Clough
Bridges Mathematical Connections in Art, Music, and Science, 193-200, 2000
52000
The role of acceptor density on the high channel carrier density I–V characteristics of AlGaAs/GaAs MODFETs
RJ Krantz, WL Bloss
Solid-state electronics 33 (7), 941-945, 1990
51990
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