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Butsurin Jinnai
Butsurin Jinnai
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Title
Cited by
Cited by
Year
Waferless auto conditioning
J Guha, S Sant, B Jinnai
US Patent 8,784,676, 2014
1942014
Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
K Watanabe, B Jinnai, S Fukami, H Sato, H Ohno
Nature communications 9 (1), 663, 2018
1922018
Chiral-spin rotation of non-collinear antiferromagnet by spin–orbit torque
Y Takeuchi, Y Yamane, JY Yoon, R Itoh, B Jinnai, S Kanai, J Ieda, ...
Nature Materials 20 (10), 1364-1370, 2021
1212021
Nanosecond random telegraph noise in in-plane magnetic tunnel junctions
K Hayakawa, S Kanai, T Funatsu, J Igarashi, B Jinnai, WA Borders, ...
Physical review letters 126 (11), 117202, 2021
1102021
Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique
B Jinnai, S Fukuda, H Ohtake, S Samukawa
Journal of Applied Physics 107 (4), 043302, 2010
612010
Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects
B Jinnai, K Watanabe, S Fukami, H Ohno
Applied physics letters 116 (16), 2020
542020
Damage mechanism in low-dielectric (low-k) films during plasma processes
B Jinnai, T Nozawa, S Samukawa
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
532008
High-performance shape-anisotropy magnetic tunnel junctions down to 2.3 nm
B Jinnai, J Igarashi, K Watanabe, T Funatsu, H Sato, S Fukami, H Ohno
2020 IEEE International Electron Devices Meeting (IEDM), 24.6. 1-24.6. 4, 2020
492020
Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam
S Samukawa, B Jinnai, F Oda, Y Morimoto
Japanese journal of applied physics 46 (1L), L64, 2007
412007
Spin-orbit torque induced magnetization switching in Co/Pt multilayers
B Jinnai, C Zhang, A Kurenkov, M Bersweiler, H Sato, S Fukami, H Ohno
Applied Physics Letters 111 (10), 2017
342017
Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance
Y Takahashi, Y Takeuchi, C Zhang, B Jinnai, S Fukami, H Ohno
Applied Physics Letters 114 (1), 2019
242019
Mechanism for low-etching resistance and surface roughness of ArF photoresist during plasma irradiation
B Jinnai, K Koyama, K Kato, A Yasuda, H Momose, S Samukawa
Journal of Applied Physics 105 (5), 2009
192009
Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions
J Igarashi, B Jinnai, V Desbuis, S Mangin, S Fukami, H Ohno
Applied Physics Letters 118 (1), 2021
162021
Real-time monitoring of charge accumulation during pulse-time-modulated plasma
H Ohtake, B Jinnai, Y Suzuki, S Soda, T Shimmura, S Samukawa
Journal of Vacuum Science & Technology A 24 (6), 2172-2175, 2006
142006
Hard-mask-through UV-light-induced damage to low-k film during plasma process for dual damascene
N Matsunaga, H Okumura, B Jinnai, S Samukawa
Japanese journal of applied physics 49 (4S), 04DB06, 2010
132010
Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires
B Jinnai, H Sato, S Fukami, H Ohno
Applied Physics Letters 113 (21), 2018
122018
Prediction of abnormal etching profile in high-aspect-ratio via/hole etching using on-wafer monitoring system
H Ohtake, S Fukuda, B Jinnai, T Tatsumi, S Samukawa
Japanese journal of applied physics 49 (4S), 04DB14, 2010
122010
Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma
E Soda, S Kondo, S Saito, K Koyama, B Jinnai, S Samukawa
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
122009
Plasma irradiation damages to magnetic tunneling junction devices
T Mukai, B Jinnai, Y Fukumoto, N Ohshima, H Hada, S Samukawa
Journal of Applied Physics 102 (7), 2007
122007
Fast switching down to 3.5 ns in sub-5-nm magnetic tunnel junctions achieved by engineering relaxation time
B Jinnai, J Igarashi, T Shinoda, K Watanabe, S Fukami, H Ohno
2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021
112021
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