Semiempirical modified embedded-atom potentials for silicon and germanium MI Baskes, JS Nelson, AF Wright Physical Review B 40 (9), 6085, 1989 | 604 | 1989 |
Consistent structural properties for AlN, GaN, and InN AF Wright, JS Nelson Physical Review B 51 (12), 7866, 1995 | 385 | 1995 |
Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method AF Wright, JS Nelson Physical Review B 50 (4), 2159, 1994 | 235 | 1994 |
Bowing parameters for zinc‐blende Al1−xGaxN and Ga1−xInxN AF Wright, JS Nelson Applied physics letters 66 (22), 3051-3053, 1995 | 144 | 1995 |
Energetics of Pt adsorption on Pt (111) PJ Feibelman, JS Nelson, GL Kellogg Physical Review B 49 (15), 10548, 1994 | 140 | 1994 |
Dimensionality and size effects in simple metals IP Batra, S Ciraci, GP Srivastava, JS Nelson, CY Fong Physical Review B 34 (12), 8246, 1986 | 132 | 1986 |
Calculation of phonons on the Cu (100) surface by the embedded-atom method JS Nelson, EC Sowa, MS Daw Physical review letters 61 (17), 1977, 1988 | 120 | 1988 |
Cu (111) and Ag (111) surface-phonon spectrum: The importance of avoided crossings JS Nelson, MS Daw, EC Sowa Physical Review B 40 (3), 1465, 1989 | 113 | 1989 |
Theory of the copper vacancy in cuprous oxide AF Wright, JS Nelson Journal of Applied Physics 92 (10), 5849-5851, 2002 | 108 | 2002 |
Theoretical study of room temperature optical gain in GaN strained quantum wells WW Chow, AF Wright, JS Nelson Applied physics letters 68 (3), 296-298, 1996 | 105 | 1996 |
growth optimization for high-power green light-emitting diodes C Wetzel, T Salagaj, T Detchprohm, P Li, JS Nelson Applied physics letters 85 (6), 866-868, 2004 | 97 | 2004 |
Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion JS Nelson, PA Schultz, AF Wright Applied physics letters 73 (2), 247-249, 1998 | 77 | 1998 |
First-principles calculations of spin-orbit splittings in solids using nonlocal separable pseudopotentials LA Hemstreet, CY Fong, JS Nelson Physical Review B 47 (8), 4238, 1993 | 77 | 1993 |
First‐principles calculations for zinc‐blende AlInN alloys AF Wright, JS Nelson Applied physics letters 66 (25), 3465-3467, 1995 | 73 | 1995 |
Site-specific hydrogen reactivity and reverse charge transfer on Ge(111)-c(2×8) T Klitsner, JS Nelson Physical review letters 67 (27), 3800, 1991 | 61 | 1991 |
Calculation of the structure of the Al (331) stepped surface JS Nelson, PJ Feibelman Physical review letters 68 (14), 2188, 1992 | 59 | 1992 |
Leveraging scale effects to create next-generation photovoltaic systems through micro-and nanotechnologies GN Nielson, M Okandan, JL Cruz-Campa, AL Lentine, WC Sweatt, ... Micro-and Nanotechnology Sensors, Systems, and Applications IV 8373, 277-286, 2012 | 47 | 2012 |
Ab initio calculations of the energetics of the neutral Si vacancy defect JL Mercer, JS Nelson, AF Wright, EB Stechel Modelling and Simulation in Materials Science and Engineering 6 (1), 1, 1998 | 47 | 1998 |
Plane-wave electronic-structure calculations on a parallel supercomputer JS Nelson, SJ Plimpton, MP Sears Physical Review B 47 (4), 1765, 1993 | 46 | 1993 |
Fast through-bond diffusion of nitrogen in silicon PA Schultz, JS Nelson Applied Physics Letters 78 (6), 736-738, 2001 | 45 | 2001 |