| Flash memory cells-an overview P Pavan, R Bez, P Olivo, E Zanoni Proceedings of the IEEE 85 (8), 1248-1271, 1997 | 1065 | 1997 |
| Flash memories P Cappelletti, C Golla, P Olivo, E Zanoni Springer Science & Business Media, 2013 | 452 | 2013 |
| High-field-induced degradation in ultra-thin SiO/sub 2/films P Olivo, TN Nguyen, B Ricco IEEE Transactions on Electron Devices 35 (12), 2259-2267, 1988 | 380 | 1988 |
| Estimate of signal probability in combinational logic networks S Ercolani, M Favalli, M Damiani, P Olivo, B Ricco Proceedings of the 1st European test conference, 132,133,134,135,136,137,138 …, 1989 | 206 | 1989 |
| Multilevel HfO2-based RRAM devices for low-power neuromorphic networks V Milo, C Zambelli, P Olivo, E Pérez, M K Mahadevaiah, O G Ossorio, ... APL materials 7 (8), 2019 | 168 | 2019 |
| Quantum-mechanical modeling of accumulation layers in MOS structure J Sune, P Olivo, B Ricco IEEE Transactions on Electron Devices 39 (7), 1732-1739, 1992 | 137 | 1992 |
| Fundamental variability limits of filament-based RRAM A Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2016 | 135 | 2016 |
| Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown B Neri, P Olivo, B Ricco Applied physics letters 51 (25), 2167-2169, 1987 | 115 | 1987 |
| Self‐consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor‐insulator interfaces J Sune, P Olivo, B Ricco Journal of applied physics 70 (1), 337-345, 1991 | 111 | 1991 |
| Oxide-thickness determination in thin-insulator MOS structures B Ricco, P Olivo, TN Nguyen, TS Kuan, G Ferriani IEEE transactions on electron devices 35 (4), 432-438, 1988 | 97 | 1988 |
| Aliasing in signature analysis testing with multiple input shift registers M Damiani, P Olivo, M Favalli, S Ercolani, B Ricco IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1990 | 91 | 1990 |
| Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime P Olivo, B Ricco, E Sangiorgi Journal of applied physics 54 (9), 5267-5276, 1983 | 78 | 1983 |
| Architectural and integration options for 3D NAND flash memories R Micheloni, L Crippa, C Zambelli, P Olivo Computers 6 (3), 27, 2017 | 74 | 2017 |
| Accurate program/verify schemes of resistive switching memory (RRAM) for in-memory neural network circuits V Milo, A Glukhov, E Pérez, C Zambelli, N Lepri, MK Mahadevaiah, ... IEEE Transactions on Electron Devices 68 (8), 3832-3837, 2021 | 72 | 2021 |
| Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAM A Grossi, E Vianello, C Zambelli, P Royer, JP Noel, B Giraud, L Perniola, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018 | 71 | 2018 |
| Testability measures in pseudorandom testing S Ercolani, M Favalli, M Damiani, P Olivo, B Ricco IEEE transactions on computer-aided design of integrated circuits and …, 1992 | 71 | 1992 |
| Impact of intercell and intracell variability on forming and switching parameters in RRAM arrays A Grossi, D Walczyk, C Zambelli, E Miranda, P Olivo, V Stikanov, A Feriani, ... IEEE Transactions on Electron Devices 62 (8), 2502-2509, 2015 | 69 | 2015 |
| Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms E Pérez, A Grossi, C Zambelli, P Olivo, R Roelofs, C Wenger IEEE Electron Device Letters 38 (2), 175-178, 2016 | 63 | 2016 |
| Flash memory reliability P Cappelletti, C Golla, P Olivo, E Zanoni, P Cappelletti, A Modelli Flash Memories, 399-441, 1999 | 63 | 1999 |
| High‐field‐induced voltage‐dependent oxide charge P Olivo, B Ricco, E Sangiorgi Applied physics letters 48 (17), 1135-1137, 1986 | 62 | 1986 |
