| Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces JM Olson, RK Ahrenkiel, DJ Dunlavy, B Keyes, AE Kibbler Applied physics letters 55 (12), 1208-1210, 1989 | 408 | 1989 |
| Hot-carrier cooling in GaAs: Quantum wells versus bulk Y Rosenwaks, MC Hanna, DH Levi, DM Szmyd, RK Ahrenkiel, AJ Nozik Physical Review B 48 (19), 14675, 1993 | 324 | 1993 |
| Time-resolved photoluminescence studies of CdTe solar cells WK Metzger, D Albin, D Levi, P Sheldon, X Li, BM Keyes, RK Ahrenkiel Journal of Applied Physics 94 (5), 3549-3555, 2003 | 241 | 2003 |
| Recombination lifetime of as a function of doping density RK Ahrenkiel, R Ellingson, S Johnston, M Wanlass Applied Physics Letters 72 (26), 3470-3472, 1998 | 238 | 1998 |
| Deep-level impurities in CdTe/CdS thin-film solar cells A Balcioglu, RK Ahrenkiel, F Hasoon Journal of Applied Physics 88 (12), 7175-7178, 2000 | 205 | 2000 |
| Measurement of minority-carrier lifetime by time-resolved photoluminescence RK Ahrenkiel Solid-state electronics 35 (3), 239-250, 1992 | 195 | 1992 |
| Minority-carrier lifetime in III–V semiconductors RK Ahrenkiel Semiconductors and semimetals 39, 39-150, 1993 | 152 | 1993 |
| Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers RK Ahrenkiel, BM Keyes, DJ Dunlavy Journal of Applied Physics 70 (1), 225-231, 1991 | 141 | 1991 |
| Development and characterization of high-efficiency Ga/sub 0.5/In/sub 0.5/P/GaAs/Ge dual-and triple-junction solar cells NH Karam, RR King, BT Cavicchi, DD Krut, JH Ermer, M Haddad, L Cai, ... IEEE Transactions on Electron Devices 46 (10), 2116-2125, 1999 | 139 | 1999 |
| Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling RK Ahrenkiel, DJ Dunlavy, B Keyes, SM Vernon, TM Dixon, SP Tobin, ... Applied physics letters 55 (11), 1088-1090, 1989 | 123 | 1989 |
| Lattice-mismatched approaches for high-performance, III-V photovoltaic energy converters MW Wanlass, SP Ahrenkiel, RK Ahrenkiel, DS Albin, JJ Carapella, ... Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005 | 121 | 2005 |
| Analysis of charge separation dynamics in a semiconductor junction WK Metzger, RK Ahrenkiel, J Dashdorj, DJ Friedman Physical Review B—Condensed Matter and Materials Physics 71 (3), 035301, 2005 | 118 | 2005 |
| Minority carrier lifetime analysis in the bulk of thin-film absorbers using subbandgap (two-photon) excitation D Kuciauskas, A Kanevce, JM Burst, JN Duenow, R Dhere, DS Albin, ... IEEE Journal of Photovoltaics 3 (4), 1319-1324, 2013 | 116 | 2013 |
| Minority carriers in III-V semiconductors: physics and applications RK Ahrenkiel, MS Lundstrom Academic Press 39, 39-150, 1993 | 111 | 1993 |
| Metal contacts to CuInSe2 RJ Matson, O Jamjoum, AD Buonaquisti, PE Russell, LL Kazmerski, ... Solar Cells 11 (3), 301-305, 1984 | 102 | 1984 |
| Recombination by grain-boundary type in CdTe J Moseley, WK Metzger, HR Moutinho, N Paudel, HL Guthrey, Y Yan, ... Journal of Applied Physics 118 (2), 2015 | 95 | 2015 |
| Semiconductors and semimetals RK Ahrenkiel, MS Lundstrom Academic Press, 1993 | 95 | 1993 |
| A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition GB Lush, HF MacMillan, BM Keyes, DH Levi, MR Melloch, RK Ahrenkiel, ... Journal of applied physics 72 (4), 1436-1442, 1992 | 92 | 1992 |
| Electron Hall mobility in the alkali halides RK Ahrenkiel, FC Brown Physical Review 136 (1A), A223, 1964 | 87 | 1964 |
| Auger recombination in low-band-gap n-type InGaAs WK Metzger, MW Wanlass, RJ Ellingson, RK Ahrenkiel, JJ Carapella Applied Physics Letters 79 (20), 3272-3274, 2001 | 75 | 2001 |
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
