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Patrick Theofanis
Patrick Theofanis
Verified email at intel.com
Title
Cited by
Cited by
Year
Nonadiabatic study of dynamic electronic effects during brittle fracture of silicon
PL Theofanis, A Jaramillo-Botero, WA Goddard III, H Xiao
Physical review letters 108 (4), 045501, 2012
382012
Understanding β-hydride eliminations from heteroatom functional groups
PL Theofanis, WA Goddard III
Organometallics 30 (18), 4941-4948, 2011
222011
Electron dynamics of shocked polyethylene crystal
PL Theofanis, A Jaramillo-Botero, WA Goddard III, TR Mattsson, ...
Physical Review B 85 (9), 094109, 2012
182012
Orientational preference in multilayer block copolymer nanomeshes with respect to layer-to-layer commensurability
CL Carpenter, S Nicaise, PL Theofanis, D Shykind, KK Berggren, ...
Macromolecules 50 (20), 8258-8266, 2017
162017
Non-adiabatic dynamics modeling framework for materials in extreme conditions
H Xiao, A Jaramillo-Botero, PL Theofanis, WA Goddard III
Mechanics of Materials 90, 243-252, 2015
112015
Large-scale molecular simulations of hypervelocity impact of materials
A Jaramillo-Botero, Q An, PL Theofanis, WA Goddard III
Procedia Engineering 58, 167-176, 2013
92013
Adhesion limits and design criteria for nanorelays
KL Lin, GLW Cross, P Gleeson, JP de Silva, A Levander, JA Munoz, ...
IEEE Transactions on Electron Devices 63 (1), 465-470, 2015
52015
Ab initio analysis of nucleation reactions during tungsten atomic layer deposition on Si(100) and W(110) substrates
MJ King, PL Theofanis, PC Lemaire, EE Santiso, GN Parsons
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (6 …, 2018
42018
In silico design of a thermal atomic layer etch process of cobalt
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (2 …, 2021
32021
Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
ACS applied materials & interfaces 12 (32), 36670-36680, 2020
32020
Magnetic nanomechanical devices for stiction compensation
JA Munoz, DE Nikonov, KJ Kuhn, P Theofanis, C Pawashe, K Lin, S Kim
US Patent 9,926,193, 2018
22018
Monte Carlo EUV stochastic simulator (MESS): a chemistry-oriented lithography simulator
PL Theofanis, O Tazetdinov
Optical and EUV Nanolithography XXXV, PC120510I, 2022
2022
Chain scission resist compositions for EUV lithography applications
L Doyle, M Krysak, P Theofanis, J Blackwell, E Han
US Patent 11,262,654, 2022
2022
Euv patterning methods, structures, and materials
M Krysak, J Blackwell, L Doyle, B Zaccheo, P Theofanis, M Robinson, ...
US Patent App. 17/308,813, 2021
2021
Vertical interconnect methods for stacked device architectures using direct self assembly with high operational parallelization and improved scalability
AD Lilak, P Theofanis, P Morrow, R Mehandru, SM Cea
US Patent 11,011,537, 2021
2021
Vertically stacked devices with self-aligned regions formed by direct self assembly (DSA) processing
AD Lilak, P Theofanis, CE Weber, SM Cea, R Mehandru
US Patent 10,991,696, 2021
2021
Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination
S Kondati Natarajan, M Nolan, P Theofanis, C Mokhtarzadeh, ...
AMERICAN CHEMICAL SOCIETY, 2020
2020
Modeling photon, electron, and chemical interactions in a model hafnium oxide nanocluster EUV photoresist
PL Theofanis, JM Blackwell, ME Krysak, F Gstrein
Extreme Ultraviolet (EUV) Lithography XI 11323, 92-105, 2020
2020
Free energy surfaces for developing homogeneous rhodium catalysts for methane oxidation
RJ Nielsen, PL Theofanis, VJ Suhardi, WA Goddard
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 243, 2012
2012
The Quantum Electron Dynamics of Materials Subjected to Extreme Environments
PL Theofanis
California Institute of Technology, 2012
2012
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Articles 1–20