| Semiconductor device K Hanaoka, D Matsubayashi, Y Kobayashi, S Yamazaki, S Matsuda US Patent 9,722,088, 2017 | 99* | 2017 |
| Semiconductor device and measurement device S Yamazaki, S Matsuda, M Oota, N Ishihara US Patent 9,343,578, 2016 | 54 | 2016 |
| Metal hole arrays as resonant photo-coupler for charge sensitive infrared phototransistors P Nickels, S Matsuda, T Ueda, Z An, S Komiyama IEEE journal of Quantum Electronics 46 (3), 384-390, 2010 | 42 | 2010 |
| Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length Y Kobayashi, S Matsuda, D Matsubayashi, H Suzawa, M Sakakura, ... Japanese Journal of Applied Physics 53 (4S), 04EF03, 2014 | 40 | 2014 |
| 30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics S Matsuda, T Hiramatsu, R Honda, D Matsubayashi, H Tomisu, ... 2015 Symposium on VLSI Technology (VLSI Technology), T216-T217, 2015 | 35 | 2015 |
| Single crystalline In–Ga–Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics Y Yamada, D Matsubayashi, S Matsuda, Y Sato, M Ota, D Ito, M Tsubuku, ... Japanese Journal of Applied Physics 53 (9), 091102, 2014 | 34 | 2014 |
| Sequential circuit and semiconductor device S Yamazaki, H Miyake, K Toyotaka, M Hayakawa, D Matsubayashi, ... US Patent 9,494,830, 2016 | 26 | 2016 |
| P‐26: A 1058 ppi 8K4K OLED Display using a Top‐Gate Self‐Aligned CAAC Oxide Semiconductor FET M Shiokawa, K Toyotaka, M Tsubuku, K Sugimoto, M Nakashima, ... SID Symposium Digest of Technical Papers 47 (1), 1209-1212, 2016 | 20 | 2016 |
| Channel length dependence of field-effect mobility of c-axis-aligned crystalline In–Ga–Zn–O field-effect transistors S Matsuda, E Kikuchi, Y Yamane, Y Okazaki, S Yamazaki Japanese Journal of Applied Physics 54 (4), 041103, 2015 | 19 | 2015 |
| Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM S Fukuyama, A Hayakawa, R Yasuhara, S Matsuda, H Kinoshita, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 15 | 2019 |
| Method for evaluating semiconductor device S Matsuda, T Takeuchi, D Matsubayashi US Patent App. 14/516,096, 2015 | 15 | 2015 |
| Low turn-on voltage due to conduction band lowering effect in crystalline indium gallium zinc oxide transistors D Matsubayashi, Y Kobayashi, S Matsuda, T Obonai, N Ishihara, ... Japanese Journal of Applied Physics 53 (4S), 04EF02, 2014 | 13 | 2014 |
| Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions K Tsutsui, D Matsubayashi, N Ishihara, T Takasu, S Matsuda, S Yamazaki Applied Physics Letters 107 (26), 2015 | 12 | 2015 |
| Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM S Fukuyama, K Maeda, S Matsuda, K Takeuchi, R Yasuhara 2018 IEEE International Reliability Physics Symposium (IRPS), P-MY. 4-1-P-MY …, 2018 | 10 | 2018 |
| P‐4: Electrical Characteristics of Dual‐Gate CAAC‐IGZO FET with Self‐Aligned Top Gate R Honda, A Suzuki, S Matsuda, S Saito, Y Shima, J Koezuka, S Yamazaki SID Symposium Digest of Technical Papers 47 (1), 1132-1135, 2016 | 9 | 2016 |
| P‐11: Channel‐Etched CAAC‐OS FETs using Multi‐layer IGZO Y Shima, H Kanemura, S Higano, Y Hosaka, K Okazaki, J Koezuka, ... SID Symposium Digest of Technical Papers 46 (1), 1158-1161, 2015 | 6 | 2015 |
| Light-emitting device, lighting device, and display device S Yamazaki, S Matsuda, T Kawata US Patent App. 14/476,771, 2015 | 6 | 2015 |
| 76‐3: Development of a Top‐Gate Transistor with Short Channel Length and C‐Axis‐Aligned Crystalline Indium‐Gallium‐Zinc‐Oxide for High‐Resolution Panels Y Shima, M Jincho, T Hamochi, S Saito, M Dobashi, K Okazaki, J Koezuka, ... SID Symposium Digest of Technical Papers 47 (1), 1037-1040, 2016 | 5 | 2016 |
| Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM K Maeda, S Matsuda, K Takeuchi, R Yasuhara 2018 48th European Solid-State Device Research Conference (ESSDERC), 46-49, 2018 | 4 | 2018 |
| Analysis for Extremely Low Off-State Current in CAAC-IGZO FETs M Tsubuku, D Matsubayashi, T Takeuchi, R Honda, T Murakawa, ... ECS Transactions 67 (1), 17, 2015 | 4 | 2015 |
Ken TakeuchiProfessor, Department of Electrical Engineering and Information Systems, The University of TokyoVerified email at co-design.t.u-tokyo.ac.jp
