| Two-Terminal Structured Synaptic Device Using Ionic Electrochemical Reaction Mechanism for Neuromorphic System C Lee, J Lee, M Kim, J Woo, SM Koo, JM Oh, D Lee IEEE Electron Device Letters 40 (4), 2019 | 40 | 2019 |
| Structural engineering of Li-based electronic synapse for high reliability Y Choi, C Lee, M Kim, Y Song, H Hwang, D Lee IEEE Electron Device Letters 40 (12), 1992-1995, 2019 | 32 | 2019 |
| Applicability of aerosol deposition process for flexible electronic device and determining the film formation mechanism with cushioning effects C Lee, MY Cho, M Kim, J Jang, Y Oh, K Oh, S Kim, B Park, B Kim, SM Koo, ... Scientific Reports 9 (1), 2166, 2019 | 24 | 2019 |
| Pr0. 7Ca0. 3MnO3-based three-terminal synapse for neuromorphic computing C Lee, KG Rajput, W Choi, M Kwak, RD Nikam, S Kim, H Hwang IEEE Electron Device Letters, 2020 | 22 | 2020 |
| Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes J Park, C Lee, M Kwak, SA Chekol, S Lim, M Kim, J Woo, H Hwang, D Lee Nanotechnology, 2019 | 21 | 2019 |
| Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor C Lee, W Choi, M Kwak, S Kim, H Hwang Applied Physics Letters 119 (10), 2021 | 19 | 2021 |
| Improved synaptic functionalities of Li-based nano-ionic synaptic transistor with ultralow conductance enabled by Al2O3 barrier layer K Lee, M Kwak, W Choi, C Lee, J Lee, S Noh, J Lee, H Lee, H Hwang Nanotechnology 32 (27), 275201, 2021 | 16 | 2021 |
| Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic system G Han, C Lee, JE Lee, J Seo, M Kim, Y Song, YH Seo, D Lee Scientific reports 11 (1), 23198, 2021 | 15 | 2021 |
| WOx-Based Synapse Device With Excellent Conductance Uniformity for Hardware Neural Networks W Choi, SG Gi, D Lee, S Lim, C Lee, BG Lee, H Hwang IEEE Transactions on Nanotechnology 19, 594-600, 2020 | 15 | 2020 |
| Excellent Synapse Characteristics of 50 nm Vertical Transistor with WOx channel for High Density Neuromorphic system C Lee, W Choi, M Kwak, S Kim, H Hwang 2021 Symposium on VLSI Technology, 1-2, 2021 | 12 | 2021 |
| Experimental measurement of ungated channel region conductance in a multi-terminal, metal oxide-based ECRAM H Kwak, C Lee, C Lee, K Noh, S Kim Semiconductor Science and Technology 36 (11), 114002, 2021 | 10 | 2021 |
| Excellent pattern recognition accuracy of neural networks using hybrid synapses and complementary training M Kwak, W Choi, S Heo, C Lee, R Nikam, S Kim, H Hwang IEEE Electron Device Letters 42 (4), 609-612, 2021 | 9 | 2021 |
| Compensated synaptic device for improved recognition accuracy of neuromorphic system C Lee, SM Koo, JM Oh, D Lee IEEE Journal of the Electron Devices Society 6, 403-407, 2018 | 9 | 2018 |
| Impact of operating temperature on pattern recognition accuracy of resistive array-based hardware neural networks W Choi, C Lee, S Noh, J Lee, H Lee, S Kim, H Hwang IEEE Electron Device Letters 42 (5), 763-766, 2021 | 8 | 2021 |
| Li memristor-based MOSFET synapse for linear I–V characteristic and processing analog input neuromorphic system C Lee, JE Lee, M Kim, Y Song, G Han, J Seo, DW Kim, YH Seo, H Hwang, ... Japanese Journal of Applied Physics 60 (2), 024003, 2021 | 8 | 2021 |
| Energy-storing hybrid 3d vertical memory structure M Kim, C Lee, Y Song, SM Koo, JM Oh, J Woo, D Lee IEEE Electron Device Letters 40 (10), 1622-1625, 2019 | 8 | 2019 |
| Selectable Titanium-oxide Based Critical and Differential Temperature Sensor in a Single Device C Lee, SM Koo, JM Oh, KS Moon, D Lee IEEE Electron Device Letters 39 (7), 1058-1060, 2018 | 8 | 2018 |
| Nonvolatile Frequency-Programmable Oscillator With NbO2 and Li-Based Electro-Chemical Random Access Memory for Coupled Oscillators-Based Temporal … D Lee, J Lee, S Lee, C Lee, S Heo, H Hwang IEEE Electron Device Letters 43 (7), 1041-1044, 2022 | 7 | 2022 |
| Multinary data processing based on nonlinear synaptic devices M Kim, JE Lee, C Lee, Y Song, G Han, J Seo, DW Kim, YH Seo, H Hwang, ... Journal of Electronic Materials 50, 3471-3477, 2021 | 7 | 2021 |
| Improved On-chip Training Efficiency at Elevated Temperature and Excellent Inference Accuracy with Retention (> 108 s) of ECRAM Synapse … C Lee, M Kwak, W k Choi, S Kim, H Hwang 2021 IEEE International Electron Devices Meeting (IEDM), 12.3. 1-12.3. 4, 2021 | 6 | 2021 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
