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Yuanxi Wang (王元希)
Yuanxi Wang (王元希)
Assistant Professor, Department of Physics, University of North Texas
Verified email at unt.edu - Homepage
Title
Cited by
Cited by
Year
Extraordinary second harmonic generation in tungsten disulfide monolayers
C Janisch, Y Wang, D Ma, N Mehta, AL Elías, N Perea-López, M Terrones, ...
Scientific reports 4 (1), 5530, 2014
3602014
Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
V Carozo, Y Wang, K Fujisawa, BR Carvalho, A McCreary, S Feng, Z Lin, ...
Science advances 3 (4), e1602813, 2017
2652017
Intervalley scattering by acoustic phonons in two-dimensional MoS 2 revealed by double-resonance Raman spectroscopy
BR Carvalho*, Y Wang*, S Mignuzzi, D Roy, M Terrones, C Fantini, ...
Nature communications 8 (1), 1-8, 2017
2372017
Non-oxidative intercalation and exfoliation of graphite by Brønsted acids
NI Kovtyukhova, Y Wang, A Berkdemir, R Cruz-Silva, M Terrones, ...
Nature chemistry 6 (11), 957-963, 2014
2192014
ReaxFF Reactive Force-Field Study of Molybdenum Disulfide (MoS2)
A Ostadhossein, A Rahnamoun, Y Wang, P Zhao, S Zhang, VH Crespi, ...
The journal of physical chemistry letters 8 (3), 631-640, 2017
1592017
Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
N Briggs*, B Bersch*, Y Wang*, J Jiang, RJ Koch, N Nayir, K Wang, ...
Nature materials 19 (6), 637-643, 2020
1392020
Defect-controlled nucleation and orientation of WSe2 on hBN: a route to single-crystal epitaxial monolayers
X Zhang*, F Zhang*, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
1322019
Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...
Advanced Science 7 (24), 2001174, 2020
1292020
Multiscale computational understanding and growth of 2D materials: a review
K Momeni, Y Ji, Y Wang, S Paul, S Neshani, DE Yilmaz, YK Shin, ...
npj Computational Materials 6 (1), 22, 2020
1122020
Reversible intercalation of hexagonal boron nitride with Brønsted acids
NI Kovtyukhova, Y Wang, R Lv, M Terrones, VH Crespi, TE Mallouk
Journal of the American Chemical Society 135 (22), 8372-8381, 2013
982013
Low‐Temperature Solution Synthesis of Few‐Layer 1T ′‐MoTe2 Nanostructures Exhibiting Lattice Compression
Y Sun, Y Wang, D Sun, BR Carvalho, CG Read, C Lee, Z Lin, K Fujisawa, ...
Angewandte Chemie 128 (8), 2880-2884, 2016
962016
Intricate Resonant Raman Response in Anisotropic ReS2
A McCreary, JR Simpson, Y Wang, D Rhodes, K Fujisawa, L Balicas, ...
Nano letters 17 (10), 5897-5907, 2017
902017
Interface-mediated noble metal deposition on transition metal dichalcogenide nanostructures
Y Sun, Y Wang, JYC Chen, K Fujisawa, CF Holder, JT Miller, VH Crespi, ...
Nature chemistry 12 (3), 284-293, 2020
792020
Multi-scale modeling of gas-phase reactions in metal-organic chemical vapor deposition growth of WSe2
Y Xuan, A Jain, S Zafar, R Lotfi, N Nayir, Y Wang, TH Choudhury, S Wright, ...
Journal of Crystal Growth 527, 125247, 2019
772019
Spontaneous formation of atomically thin stripes in transition metal dichalcogenide monolayers
A Azizi, Y Wang, Z Lin, K Wang, AL Elias, M Terrones, VH Crespi, N Alem
Nano letters 16 (11), 6982-6987, 2016
672016
Evidence for a Magnetic-Field-Induced Ideal Type-II Weyl State in Antiferromagnetic Topological Insulator
SH Lee, D Graf, L Min, Y Zhu, H Yi, S Ciocys, Y Wang, ES Choi, R Basnet, ...
Physical Review X 11 (3), 031032, 2021
562021
Defect Coupling and Sub-Angstrom Structural Distortions in W1–xMoxS2 Monolayers
A Azizi, Y Wang, G Stone, AL Elias, Z Lin, M Terrones, VH Crespi, N Alem
Nano letters 17 (5), 2802-2808, 2017
542017
Nonlinear dark-field imaging of one-dimensional defects in monolayer dichalcogenides
BR Carvalho, Y Wang, K Fujisawa, T Zhang, E Kahn, I Bilgin, PM Ajayan, ...
Nano letters 20 (1), 284-291, 2019
442019
Dynamics of cleaning, passivating and doping monolayer MoS2 by controlled laser irradiation
R Rao, V Carozo, Y Wang, AE Islam, N Perea-Lopez, K Fujisawa, ...
2D Materials 6 (4), 045031, 2019
442019
Full orientation control of epitaxial MoS 2 on hBN assisted by substrate defects
F Zhang*, Y Wang*, C Erb, K Wang, P Moradifar, VH Crespi, N Alem
Physical review B 99 (15), 155430, 2019
442019
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