Hideo Ohno
Hideo Ohno
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Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
T Dietl, H Ohno, F Matsukura, J Cibert, D Ferrand
science 287 (5455), 1019-1022, 2000
Making nonmagnetic semiconductors ferromagnetic
H Ohno
science 281 (5379), 951-956, 1998
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
S Ikeda, K Miura, H Yamamoto, K Mizunuma, HD Gan, M Endo, S Kanai, ...
Nature materials 9 (9), 721-724, 2010
Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
T Sugihara, H Ohno, M Kawasaki
US Patent 8,093,589, 2012
Thin film transistor and matrix display device
M Kawasaki, H Ohno, K Kobayashi, I Sakono
US Patent 6,563,174, 2003
Transistor and semiconductor device
M Kawasaki, H Ohno
US Patent 6,727,522, 2004
Electrical spin injection in a ferromagnetic semiconductor heterostructure
Y Ohno, DK Young, B Beschoten, F Matsukura, H Ohno, DD Awschalom
Nature 402 (6763), 790-792, 1999
(Ga, Mn) As: a new diluted magnetic semiconductor based on GaAs
H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Katsumoto, Y Iye
Applied Physics Letters 69 (3), 363-365, 1996
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
A Tsukazaki, A Ohtomo, T Onuma, M Ohtani, T Makino, M Sumiya, ...
Nature materials 4 (1), 42-46, 2005
Electric-field control of ferromagnetism
H Ohno, D Chiba, F Matsukura, T Omiya, E Abe, T Dietl, Y Ohno, K Ohtani
Nature 408 (6815), 944-946, 2000
Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
T Dietl, H Ohno, F Matsukura
Physical Review B 63 (19), 195205, 2001
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature
S Ikeda, J Hayakawa, Y Ashizawa, YM Lee, K Miura, H Hasegawa, ...
Applied Physics Letters 93 (8), 2008
Magnetotransport properties of p-type (In,Mn)As diluted magnetic III-V semiconductors
H Ohno, H Munekata, T Penney, S Von Molnar, LL Chang
Physical Review Letters 68 (17), 2664, 1992
Transport properties and origin of ferromagnetism in (Ga, Mn) As
F Matsukura, H Ohno, A Shen, Y Sugawara
Physical Review B 57 (4), R2037, 1998
Diluted magnetic III-V semiconductors
H Munekata, H Ohno, S Von Molnar, A Segmüller, LL Chang, L Esaki
Physical Review Letters 63 (17), 1849, 1989
Current-induced torques in magnetic materials
A Brataas, AD Kent, H Ohno
Nature materials 11 (5), 372-381, 2012
Properties of ferromagnetic III–V semiconductors
H Ohno
Journal of magnetism and magnetic materials 200 (1-3), 110-129, 1999
Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system
S Fukami, C Zhang, S DuttaGupta, A Kurenkov, H Ohno
Nature materials 15 (5), 535-541, 2016
Dilute ferromagnetic semiconductors: Physics and spintronic structures
T Dietl, H Ohno
Reviews of Modern Physics 86 (1), 187, 2014
Spintronics based random access memory: a review
S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami, SN Piramanayagam
Materials Today 20 (9), 530-548, 2017
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