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Alana Hyland
Alana Hyland
Verified email at canterbury.ac.nz
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Cited by
Cited by
Year
Giant improvement in the rectifying performance of oxidized Schottky contacts to ZnO
AM Hyland, RA Makin, SM Durbin, MW Allen
Journal of Applied Physics 121 (2), 2017
502017
Effect of Schottky gate type and channel defects on the stability of transparent ZnO MESFETs
S Elzwawi, A Hyland, M Lynam, JG Partridge, DG McCulloch, MW Allen
Semiconductor Science and Technology 30 (2), 024008, 2015
142015
Thermal stability of oxidized noble metal Schottky contacts to ZnO
AM Hyland, RJ Reeves, RA Makin, SM Durbin, MW Allen
Materials Science in Semiconductor Processing 69, 9-12, 2017
132017
Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers
GM Foster, H Gao, G Mackessy, AM Hyland, MW Allen, B Wang, DC Look, ...
Applied Physics Letters 111 (10), 2017
132017
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
LJ Brillson, GM Foster, J Cox, WT Ruane, AB Jarjour, H Gao, ...
Journal of Electronic Materials 47, 4980-4986, 2018
72018
Characterization of Tin Oxide Grown by Molecular Beam Epitaxy
G Medina, PA Stampe, RJ Kennedy, RJ Reeves, GT Dang, A Hyland, ...
MRS Online Proceedings Library (OPL) 1633, 13-18, 2014
12014
Noble metal-oxide Schottky contacts on zinc oxide.
AM Hyland
University of Canterbury, 2017
2017
Allen, Martin Ward, 13, 51 Baldwin, D., 87 Berengue, OM, 25 Bermundo, Juan Paolo, 139
B Chen, AJ Chiquito, TK Chuang, J Cliff, GT Dang, JM Dell, CP Dietrich, ...
Use of Electronic UV Dosimeters in New Zealand School-based Primary Skin Cancer Prevention Programmes–Kara Chameleon’s Sun Smart UV Lab
MW Allen, AM Hyland, AJ Salkeld, KA Miller, MG Cockburn
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Articles 1–9