| Helicity-dependent photocurrents in graphene layers excited by midinfrared radiation of a CO 2 laser C Jiang, VA Shalygin, VY Panevin, SN Danilov, MM Glazov, R Yakimova, ... Physical Review B 84 (12), 125429, 2011 | 119 | 2011 |
| Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ... Journal of applied physics 106 (12), 2009 | 39 | 2009 |
| Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation GA Melentev, VA Shalygin, LE Vorobjev, VY Panevin, DA Firsov, ... Journal of Applied Physics 119 (9), 2016 | 36 | 2016 |
| Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure VA Shalygin, MD Moldavskaya, MY Vinnichenko, KV Maremyanin, ... Journal of Applied Physics 126 (18), 2019 | 33 | 2019 |
| Terahertz luminescence in strained GaAsN: Be layers under strong electric fields VA Shalygin, LE Vorobjev, DA Firsov, VY Panevin, AN Sofronov, ... Applied physics letters 90 (16), 2007 | 30 | 2007 |
| Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping DA Firsov, LE Vorobjev, VY Panevin, AN Sofronov, RM Balagula, ... Semiconductors 49, 28-32, 2015 | 25 | 2015 |
| The effect of stimulated interband emission on the impurity-assisted far-infrared photoluminescence in GaAs/AlGaAs quantum wells IS Makhov, VY Panevin, AN Sofronov, DA Firsov, LE Vorobjev, ... Superlattices and Microstructures 112, 79-85, 2017 | 22 | 2017 |
| Carrier heating in quantum wells under optical and current injection of electron-hole pairs LE Vorobjev, MY Vinnichenko, DA Firsov, VL Zerova, VY Panevin, ... Semiconductors 44, 1402-1405, 2010 | 18 | 2010 |
| Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots AN Sofronov, LE Vorobjev, DA Firsov, VY Panevin, RM Balagula, ... Superlattices and microstructures 87, 53-57, 2015 | 17 | 2015 |
| Terahertz photoluminescence of the donor doped GaAs/AlGaAs quantum wells controlled by the near-infrared stimulated emission IS Makhov, VY Panevin, DA Firsov, LE Vorobjev, AP Vasil'ev, NA Maleev Journal of Luminescence 210, 352-357, 2019 | 16 | 2019 |
| Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states DA Firsov, VA Shalygin, VY Panevin, GA Melentyev, AN Sofronov, ... Semiconductors 44, 1394-1397, 2010 | 16 | 2010 |
| Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes MA Elistratova, IB Zakharova, NM Romanov, VY Panevin, OE Kvyatkovskii Semiconductors 50 (9), 1191-1197, 2016 | 14 | 2016 |
| Interaction of surface plasmon–phonon polaritons with terahertz radiation in heavily doped GaAs epilayers VA Shalygin, MD Moldavskaya, VY Panevin, AI Galimov, GA Melentev, ... Journal of Physics: Condensed Matter 31 (10), 105002, 2019 | 13 | 2019 |
| Impurity-assisted terahertz photoluminescence in compensated quantum wells IS Makhov, VY Panevin, DA Firsov, LE Vorobjev, GV Klimko Journal of Applied Physics 126 (17), 2019 | 12 | 2019 |
| Lateral photoconductivity in structures with Ge/Si quantum dots VY Panevin, AN Sofronov, LE Vorobjev, DA Firsov, VA Shalygin, ... Semiconductors 47, 1574-1577, 2013 | 12 | 2013 |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells LE Vorobjev, DA Firsov, VA Shalygin, NK Fedosov, VY Panevin, ... Semiconductor science and technology 21 (9), 1341, 2006 | 11 | 2006 |
| Carrier transfer in coupled asymmetric GaAs/AlGaAs double quantum wells after ultrafast intersubband excitation LE Vorobjev, VY Panevin, NK Fedosov, DA Firsov, VA Shalygin, ... Semiconductor science and technology 21 (9), 1267, 2006 | 11 | 2006 |
| Терагерцовое излучение, связанное с примесными переходами электронов в квантовых ямах при оптической и электрической накачке ДА Фирсов, ЛЕ Воробьев, ВЮ Паневин, АН Софронов, РМ Балагула, ... Физика и техника полупроводников 49 (1), 30, 2015 | 9 | 2015 |
| Излучение и фотопроводимость в квантовых ямах GaAs/AlGaAs n-типа в терагерцовой области спектра: роль резонансных состояний ДА Фирсов, ВА Шалыгин, ВЮ Паневин, ГА Мелентьев, АН Софронов, ... Физика и техника полупроводников 44 (11), 1443, 2010 | 9 | 2010 |
| Intraband absorption and emission of light in quantum wells and quantum dots LE Vorob’ev, VY Panevin, NK Fedosov, DA Firsov, VA Shalygin, S Hanna, ... Physics of the Solid State 46, 118-121, 2004 | 8 | 2004 |
