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Martyna Grydlik
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Lasing from glassy Ge quantum dots in crystalline Si
M Grydlik, F Hackl, H Groiss, M Glaser, A Halilovic, T Fromherz, W Jantsch, ...
ACS photonics 3 (2), 298-303, 2016
1202016
Key role of the wetting layer in revealing the hidden path of Ge/Si (001) Stranski-Krastanow growth onset
M Brehm, F Montalenti, M Grydlik, G Vastola, H Lichtenberger, N Hrauda, ...
Physical Review B 80 (20), 205321, 2009
1132009
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates
M Grydlik, G Langer, T Fromherz, F Schäffler, M Brehm
Nanotechnology 24 (10), 105601, 2013
922013
Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
M Brehm, M Grydlik
Nanotechnology 28 (39), 392001, 2017
722017
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates
G Vastola, M Grydlik, M Brehm, T Fromherz, G Bauer, F Boioli, L Miglio, ...
Physical Review B 84 (15), 155415, 2011
492011
Evolution of epitaxial semiconductor nanodots and nanowires from supersaturated wetting layers
J Zhang, M Brehm, M Grydlik, OG Schmidt
Chemical Society Reviews 44 (1), 26-39, 2015
482015
The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer
M Brehm, M Grydlik, H Groiss, F Hackl, F Schäffler, T Fromherz, G Bauer
Journal of Applied Physics 109 (12), 2011
462011
Laser level scheme of self-interstitials in epitaxial Ge dots encapsulated in Si
M Grydlik, MT Lusk, F Hackl, A Polimeni, T Fromherz, W Jantsch, ...
Nano letters 16 (11), 6802-6807, 2016
442016
Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si (001) substrates
F Hackl, M Grydlik, M Brehm, H Groiss, F Schäffler, T Fromherz, G Bauer
Nanotechnology 22 (16), 165302, 2011
442011
UV nanoimprint lithography for the realization of large-area ordered SiGe/Si (001) island arrays
E Lausecker, M Brehm, M Grydlik, F Hackl, I Bergmair, M Mühlberger, ...
Applied Physics Letters 98 (14), 2011
422011
Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)
M Brehm, M Grydlik, H Lichtenberger, T Fromherz, N Hrauda, W Jantsch, ...
Applied Physics Letters 93 (12), 2008
402008
Inverted Ge islands in {111} faceted Si pits—a novel approach towards SiGe islands with higher aspect ratio
M Grydlik, M Brehm, F Hackl, H Groiss, T Fromherz, F Schäffler, G Bauer
New Journal of Physics 12 (6), 063002, 2010
372010
Excitation intensity driven PL shifts of SiGe islands on patterned and planar Si (001) substrates: evidence for Ge-rich dots in islands
M Brehm, M Grydlik, F Hackl, E Lausecker, T Fromherz, G Bauer
Nanoscale research letters 5, 1868-1872, 2010
292010
Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots
H Groiss, L Spindlberger, P Oberhumer, F Schäffler, T Fromherz, ...
Semiconductor Science and Technology 32 (2), 02LT01, 2017
272017
Optical properties of individual site-controlled Ge quantum dots
M Grydlik, M Brehm, T Tayagaki, G Langer, OG Schmidt, F Schäffler
Applied Physics Letters 106 (25), 2015
262015
Assessing the delay of plastic relaxation onset in SiGe islands grown on pit-patterned Si (001) substrates
F Boioli, R Gatti, M Grydlik, M Brehm, F Montalenti, L Miglio
Applied physics letters 99 (3), 2011
242011
Photoluminescence investigation of strictly ordered Ge dots grown on pit-patterned Si substrates
M Brehm, M Grydlik, T Tayagaki, G Langer, F Schäffler, OG Schmidt
Nanotechnology 26 (22), 225202, 2015
222015
Unrolling the evolution kinetics of ordered SiGe islands via Ge surface diffusion
M Grydlik, M Brehm, F Hackl, F Schäffler, G Bauer, T Fromherz
Physical Review B 88 (11), 115311, 2013
202013
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si (001)
M Grydlik, F Boioli, H Groiss, R Gatti, M Brehm, F Montalenti, B Devincre, ...
Applied Physics Letters 101 (1), 2012
202012
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si (001)
R Bergamaschini, M Brehm, M Grydlik, T Fromherz, G Bauer, F Montalenti
Nanotechnology 22 (28), 285704, 2011
192011
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